Bulletin I27201 rev. A 01/06 GA100TS60SF "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features • • • • • VCES = 600V Standard Speed PT Igbt Technology Fred PT Antiparallel diodes with Fast recovery Very Low Conduction Losses Al2O3 DBC UL Pending IC = 220A DC VCE(on) typ. = 1.39V @ IC = 200A TJ = 25°C Benefits • • • • • Optimized for high current inverter stages (AC TIG welding machines) Direct mounting to heatsink Hard switching operation frequency up to 1 KHz Very low junction-to-case thermal resistance Low EMI INT-A-PAK Absolute Maximum Ratings Parameters V CES Collector-to-Emitter Voltage IC Continuos Collector Current Max Units 600 V @ TC = 25°C 220 A @ TC = 130°C 100 I CM Pulsed Collector Current I LM Peak Switching Current 440 V GE Gate-to-Emitter Voltage ± 20 V ISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 PD Maximum Power Dissipation www.irf.com 440 @ TC = 25°C 780 @ TC = 100°C 312 V W 1 GA100TS60SF Bulletin I27201 rev. A 01/06 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions VBRCES Collector-to-Emitter Breakdown Voltage 600 V CE(on) Collector-to-Emitter Voltage V 1.11 V GE = 0V, I C = 1mA 1.28 V GE = 15V, I C = 100A 1.22 6 V GE = 15V, I C = 100A, T J = 125°C I C = 0.25mA 1.39 IC = 200A 1.08 V GE(th) Gate Threshold Voltage I CES Collector-to-Emiter Leakage 1 Current 10 VFM I GES 3 Diode Forward Voltage drop 1.44 1.96 1.25 1.54 Gate-to-Emitter Leakage Current ± 250 mA V GE = 0V, V CE = 600V V GE = 0V, V CE = 600V, T J = 125°C V I C = 100A, V GE = 0V I C = 100A, V GE = 0V, T J = 125°C nA V GE = ± 20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Qg Qge Total Gate Charge Gate-Emitter Charge 640 108 700 120 Qgc tr tf Eon Eoff Ets Eon Eoff Ets Gate-Collector Charge Rise Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy 230 0.45 1.0 4 23 27 6 35 41 300 Cies Coes Cres trr Irr Qrr trr Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Current Diode Recovery Charge Diode Reverse Recovery Time Irr Qrr Diode Peak Reverse Current Diode Recovery Charge nC IC = 100A V CC = 400V VGE = 15V µs IC = 100A, VCC = 480V, VGE = 15V Rg = 15Ω 6 29 35 12 40 52 mJ mJ IC = 100A, VCC = 480V, VGE = 15V Rg = 15Ω, TJ = 125°C 16250 1040 190 91 10.6 500 180 pF 155 15 900 344 ns A nC ns 17 1633 20.5 2315 A nC VGE = 0V VCC = 30V f = 1.0 MHz IF = 50A, dIF /dt = 200A/µs VRR = 200V IF = 50A, dIF /dt = 200A/µs VRR = 200V TJ = 125°C Thermal- Mechanical Specifications Parameters Typ Max Units °C TJ Operating Junction Temperature Range - 40 150 TSTG Storage Temperature Range - 40 125 R thJC Junction-to-Case per Switch 0.16 0.48 R thCS Case-to-Sink Per Diode Per Module T Mounting torque Weight 2 Min °C/ W 0.1 Case to heatsink Case to terminal 1, 2, 3 4 3 185 Nm g www.irf.com GA100TS60SF Bulletin I27201 rev. A 01/06 1000 1000 IC , Collector-to-Emitter Current (A) IC, Collector-to-Emitter Current (A) Vge = 15V 100 Tj = 25˚C Tj = 125˚C 10 0.6 0.8 1 1.2 1.4 1.6 100 T J = 25˚C 10 Vce = 10V 380µs PULSE WIDTH 1 5.5 1.8 6.5 7.5 8.5 VCE, Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics 240 1.5 VCE, Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) T J = 125˚C 200 160 120 80 40 0 25 www.irf.com 50 75 100 125 150 I C = 200A 1.3 I C = 100A 1.1 I = 50A 0.9 0.7 25 50 75 100 125 150 TC, Case Temperature (°C) TJ, Junction Temperature (°C) Fig. 3 - Maximum Collector Current vs. Case Temperature Fig. 4 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 3 GA100TS60SF Bulletin I27201 rev. A 01/06 35 Vcc = 400V Ic = 100A Tj = 25˚C, Vce = 480V 30 Vge = 15V, Ic = 100A 15 Switching Losses (mJ) VGE, Gate-to-Emitter Voltage (V) 20 10 5 Eoff 25 20 15 Eon 10 5 0 0 100 200 300 400 500 600 700 0 10 20 30 40 50 QG, Total Gate Charge (nC) RG, Gate Reistance (Ω) Fig. 5 - Typical Gate Charge vs. Gate-toEmitter Voltage Fig. 6 - Typical Switching Losses vs Gate Resistance 60 Tj = 125˚C Vce = 480V Vge = 15V Rge = 15 Ω Switching Losses (mJ) 50 Eoff 40 30 20 Eon 10 0 0 40 80 120 160 IC, Collector-to-Emitter Current (A) Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current 4 www.irf.com GA100TS60SF Bulletin I27201 rev. A 01/06 1000 1000 If = 50A, Tj = 125˚C Tj = 125˚C 100 t rr (ns) Instantaneous Forward Current - I F (A) Vr = 200V 100 If = 50A, Tj = 25˚C 10 Tj = 25˚C 1 0 0.5 1 1.5 2 10 100 2.5 Forward Voltage Drop- VFM (V) di f /dt - A/µs Fig. 8 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 9 - Typical Reverse Recovery vs. dif /dt 100 10000 Vr = 200V Vr = 200V If = 50A, Tj = 125˚C If = 50A, Tj = 125˚C Q RR (nC) I RRM (A) 1000 10 If = 50A, Tj = 25˚C 1000 If = 50A, Tj = 25˚C 1 100 1000 100 100 1000 di f /dt - A/µs dif /dt - A/µs Fig. 10 - Typical Reverse Recovery Current vs. dif /dt Fig. 11 - Typical Stored Charge vs. dif /dt www.irf.com 5 GA100TS60SF Bulletin I27201 rev. A 01/06 Outline Table All dimensions are in millimeters Ordering Information Table Device Code GA 100 1 6 2 T S 60 S F 3 4 5 6 7 1 - Essential Part Number IGBT modules 2 - Current rating 3 - Circuit Configuration (T = Half Bridge) 4 - Int-A-Pak 5 - Voltage Code (60 = 600V) 6 - Speed/ Type (S = Standard Speed IGBT) 7 - Diode Type (100 = 100A) www.irf.com GA100TS60SF Bulletin I27201 rev. A 01/06 Data and specifications subject to change without notice. This product has been designed for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 01/06 www.irf.com 7