IRF GA100TS60SF

Bulletin I27201 rev. A 01/06
GA100TS60SF
"HALF-BRIDGE" IGBT INT-A-PAK
Standard Speed IGBT
Features
•
•
•
•
•
VCES = 600V
Standard Speed PT Igbt Technology
Fred PT Antiparallel diodes with Fast
recovery
Very Low Conduction Losses
Al2O3 DBC
UL Pending
IC = 220A DC
VCE(on) typ. = 1.39V
@ IC = 200A TJ = 25°C
Benefits
•
•
•
•
•
Optimized for high current inverter
stages (AC TIG welding machines)
Direct mounting to heatsink
Hard switching operation frequency
up to 1 KHz
Very low junction-to-case thermal
resistance
Low EMI
INT-A-PAK
Absolute Maximum Ratings
Parameters
V CES
Collector-to-Emitter Voltage
IC
Continuos Collector Current
Max
Units
600
V
@ TC = 25°C
220
A
@ TC = 130°C
100
I CM
Pulsed Collector Current
I LM
Peak Switching Current
440
V GE
Gate-to-Emitter Voltage
± 20
V ISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
2500
PD
Maximum Power Dissipation
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440
@ TC = 25°C
780
@ TC = 100°C
312
V
W
1
GA100TS60SF
Bulletin I27201 rev. A 01/06
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
VBRCES
Collector-to-Emitter Breakdown Voltage
600
V CE(on)
Collector-to-Emitter Voltage
V
1.11
V GE = 0V, I C = 1mA
1.28
V GE = 15V, I C = 100A
1.22
6
V GE = 15V, I C = 100A, T J = 125°C
I C = 0.25mA
1.39
IC = 200A
1.08
V GE(th)
Gate Threshold Voltage
I CES
Collector-to-Emiter Leakage
1
Current
10
VFM
I GES
3
Diode Forward Voltage drop
1.44
1.96
1.25
1.54
Gate-to-Emitter Leakage Current
± 250
mA
V GE = 0V, V CE = 600V
V GE = 0V, V CE = 600V, T J = 125°C
V
I C = 100A, V GE = 0V
I C = 100A, V GE = 0V, T J = 125°C
nA
V GE = ± 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ
Max Units Test Conditions
Qg
Qge
Total Gate Charge
Gate-Emitter Charge
640
108
700
120
Qgc
tr
tf
Eon
Eoff
Ets
Eon
Eoff
Ets
Gate-Collector Charge
Rise Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
230
0.45
1.0
4
23
27
6
35
41
300
Cies
Coes
Cres
trr
Irr
Qrr
trr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Current
Diode Recovery Charge
Diode Reverse Recovery Time
Irr
Qrr
Diode Peak Reverse Current
Diode Recovery Charge
nC
IC = 100A
V CC = 400V
VGE = 15V
µs
IC = 100A, VCC = 480V, VGE = 15V
Rg = 15Ω
6
29
35
12
40
52
mJ
mJ
IC = 100A, VCC = 480V, VGE = 15V
Rg = 15Ω, TJ = 125°C
16250
1040
190
91
10.6
500
180
pF
155
15
900
344
ns
A
nC
ns
17
1633
20.5
2315
A
nC
VGE = 0V
VCC = 30V
f = 1.0 MHz
IF = 50A, dIF /dt = 200A/µs
VRR = 200V
IF = 50A, dIF /dt = 200A/µs
VRR = 200V
TJ = 125°C
Thermal- Mechanical Specifications
Parameters
Typ
Max
Units
°C
TJ
Operating Junction Temperature Range
- 40
150
TSTG
Storage Temperature Range
- 40
125
R thJC
Junction-to-Case
per Switch
0.16
0.48
R thCS
Case-to-Sink
Per Diode
Per Module
T
Mounting torque
Weight
2
Min
°C/ W
0.1
Case to heatsink
Case to terminal 1, 2, 3
4
3
185
Nm
g
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GA100TS60SF
Bulletin I27201 rev. A 01/06
1000
1000
IC , Collector-to-Emitter Current (A)
IC, Collector-to-Emitter Current (A)
Vge = 15V
100
Tj = 25˚C
Tj = 125˚C
10
0.6
0.8
1
1.2
1.4
1.6
100
T J = 25˚C
10
Vce = 10V
380µs PULSE WIDTH
1
5.5
1.8
6.5
7.5
8.5
VCE, Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
240
1.5
VCE, Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
T J = 125˚C
200
160
120
80
40
0
25
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50
75
100
125
150
I C = 200A
1.3
I C = 100A
1.1
I = 50A
0.9
0.7
25
50
75
100
125
150
TC, Case Temperature (°C)
TJ, Junction Temperature (°C)
Fig. 3 - Maximum Collector Current
vs. Case Temperature
Fig. 4 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
3
GA100TS60SF
Bulletin I27201 rev. A 01/06
35
Vcc = 400V
Ic = 100A
Tj = 25˚C, Vce = 480V
30 Vge = 15V, Ic = 100A
15
Switching Losses (mJ)
VGE, Gate-to-Emitter Voltage (V)
20
10
5
Eoff
25
20
15
Eon
10
5
0
0
100 200 300 400 500 600 700
0
10
20
30
40
50
QG, Total Gate Charge (nC)
RG, Gate Reistance (Ω)
Fig. 5 - Typical Gate Charge vs. Gate-toEmitter Voltage
Fig. 6 - Typical Switching Losses vs Gate
Resistance
60
Tj = 125˚C
Vce = 480V
Vge = 15V
Rge = 15 Ω
Switching Losses (mJ)
50
Eoff
40
30
20
Eon
10
0
0
40
80
120
160
IC, Collector-to-Emitter Current (A)
Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current
4
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GA100TS60SF
Bulletin I27201 rev. A 01/06
1000
1000
If = 50A, Tj = 125˚C
Tj = 125˚C
100
t rr (ns)
Instantaneous Forward Current - I F (A)
Vr = 200V
100
If = 50A, Tj = 25˚C
10
Tj = 25˚C
1
0
0.5
1
1.5
2
10
100
2.5
Forward Voltage Drop- VFM (V)
di f /dt - A/µs
Fig. 8 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
Fig. 9 - Typical Reverse Recovery vs. dif /dt
100
10000
Vr = 200V
Vr = 200V
If = 50A, Tj = 125˚C
If = 50A, Tj = 125˚C
Q RR (nC)
I RRM (A)
1000
10
If = 50A, Tj = 25˚C
1000
If = 50A, Tj = 25˚C
1
100
1000
100
100
1000
di f /dt - A/µs
dif /dt - A/µs
Fig. 10 - Typical Reverse Recovery Current
vs. dif /dt
Fig. 11 - Typical Stored Charge vs. dif /dt
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GA100TS60SF
Bulletin I27201 rev. A 01/06
Outline Table
All dimensions are in millimeters
Ordering Information Table
Device Code
GA 100
1
6
2
T
S
60
S
F
3
4
5
6
7
1
-
Essential Part Number IGBT modules
2
-
Current rating
3
-
Circuit Configuration (T = Half Bridge)
4
-
Int-A-Pak
5
-
Voltage Code
(60 = 600V)
6
-
Speed/ Type
(S = Standard Speed IGBT)
7
-
Diode Type
(100 = 100A)
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GA100TS60SF
Bulletin I27201 rev. A 01/06
Data and specifications subject to change without notice.
This product has been designed for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 01/06
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