Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT10N10
Power MOSFET
10A, 100V N-CHANNEL
MOSFET

DESCRIPTION
The UTC UTT10N10 is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide the
customers with a minimum on-state resistance, high switching speed
and ultra low gate charge. It also can withstand high energy pulse in
the avalanche and commutation mode.

FEATURES
* RDS(on) <180mΩ @VGS = 10 V
* High Switching Speed


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT10N10L-TM3-T
UTT10N10G-TM3-T
UTT10N10L-TN3-R
UTT10N10G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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UTT10N10

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
RATINGS
UNIT
VDSS
100
V
VGSS
±25
V
Continuous
ID
10
A
Drain Current
Pulsed
IDM
40
A
Avalanche Current
IAR
12.8
A
95
mJ
Single Pulsed
EAS
Avalanche Energy
Repetitive
EAR
6.5
mJ
Peak Diode Recovery dv/dt
dv/dt
6
V/ns
Power Dissipation
PD
54
W
Junction Temperature
TJ
-25 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
θJA
θJC
RATINGS
62.5
2.31
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=100V, VGS=0V
VGS=+25V, VDS=0V
VGS=-25V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=6.4A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, VGS=10V, ID=0.5A,
RG=25Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
Total Gate Charge
QG
VDS=10V, VGS=10V, ID=2A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=10A, VGS=0V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
100
1
+100
-100
V
µA
nA
nA
142
3.0
180
V
mΩ
700
50
40
900
65
55
pF
pF
pF
30
30
290
50
90
6
7
50
50
350
80
110
ns
ns
ns
ns
nC
nC
nC
10
40
1.5
A
A
V
1.0
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UTT10N10
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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