UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT10N10 Power MOSFET 10A, 100V N-CHANNEL MOSFET DESCRIPTION The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode. FEATURES * RDS(on) <180mΩ @VGS = 10 V * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT10N10L-TM3-T UTT10N10G-TM3-T UTT10N10L-TN3-R UTT10N10G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-714.d UTT10N10 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 100 V VGSS ±25 V Continuous ID 10 A Drain Current Pulsed IDM 40 A Avalanche Current IAR 12.8 A 95 mJ Single Pulsed EAS Avalanche Energy Repetitive EAR 6.5 mJ Peak Diode Recovery dv/dt dv/dt 6 V/ns Power Dissipation PD 54 W Junction Temperature TJ -25 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.5 2.31 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS ID=250µA, VGS=0V VDS=100V, VGS=0V VGS=+25V, VDS=0V VGS=-25V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6.4A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, VGS=10V, ID=0.5A, RG=25Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF Total Gate Charge QG VDS=10V, VGS=10V, ID=2A Gate to Source Charge QGS Gate to Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=10A, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 100 1 +100 -100 V µA nA nA 142 3.0 180 V mΩ 700 50 40 900 65 55 pF pF pF 30 30 290 50 90 6 7 50 50 350 80 110 ns ns ns ns nC nC nC 10 40 1.5 A A V 1.0 2 of 3 QW-R502-714.d UTT10N10 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-714.d