Analog Power AM60N10-70P N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 78 @ VGS = 10V 92 @ VGS = 5.5V 51a DRAIN connected to TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 a TA=25°C ID 51 Continuous Drain Current IDM Pulsed Drain Current b 240 IS 90 Continuous Source Current (Diode Conduction) a a T =25°C P 300 Power Dissipation A D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case ID(A) a Symbol Maximum RθJA 62.5 RθJC 1 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM60N10-70P_1A Analog Power AM60N10-70P Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance rDS(on) Forward Transconductance Diode Forward Voltage gfs VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 5.5 V, ID = 18 A VDS = 15 V, ID = 20 A IS = 20 A, VGS = 0 V Dynamic VDS = 50 V, VGS = 5.5 V, ID = 20 A VDS = 50 V, RL = 2.5 Ω, ID = 20 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 MHz Min Typ Max 1 ±100 1 25 100 Unit V nA uA A 78 92 25 0.93 13 4.3 8.2 9 9 20 11 822 83 72 mΩ S V nC ns pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. 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APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS_AM60N10-70P_1A Analog Power AM60N10-70P Typical Electrical Characteristics 0.16 25 20 0.128 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 5.5V 0.096 6V 8V,10V 0.064 15 10 5 0.032 0 0 0 5 10 15 20 0 25 ID-Drain Current (A) 4 6 8 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 0.3 100 TJ = 25°C ID = 20A 0.25 TJ = 25°C IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 0.2 0.15 0.1 10 1 0.1 0.05 0 0.01 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 25 1600 F = 1MHz 10V,8V 20 1200 6V Capacitance (pf) ID - Drain Current (A) 1400 5.5V 15 10 1000 Ciss 800 600 400 5 Coss 200 Crss 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM60N10-70P_1A Analog Power AM60N10-70P Typical Electrical Characteristics 2.5 VDS = 50V 9 ID = 20A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 7 6 5 4 3 2 2 1.5 1 1 0 0.5 0 10 20 30 -50 -25 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 175 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 1000 PEAK TRANSIENT POWER (W) 120 10 uS 100 100 uS 1 mS ID Current (A) 25 10 mS 10 100 mS 1 SEC 1 10 SEC 100 SEC DC 1 0.1 Idm limit 100 80 60 40 20 Limited by RDS 0.01 0.1 1 10 100 0 0.001 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.1 0.2 RθJA(t) = r(t) + RθJA 0.1 RθJA = 62.5 °C /W 0.05 P(pk) 0.02 0.01 t1 t2 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM60N10-70P_1A Analog Power AM60N10-70P Package Information © Preliminary 5 Publication Order Number: DS_AM60N10-70P_1A