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DER-8315-13-P060
Design Example Report
标题
Chipown
基于 PN8315 的 15W LED 应用方案 110V150mA (过 CE 版)
输入电压:176~264V 电压
规格
输出功率:16.5W
输出电压:110V
输出电流:150mA±3%
应用范围
LED 照明类电源产品(球泡灯、筒灯、平板灯)
文件编号
DER-8315-13-P060
特性概述:
·双面板设计,双面元器件,面积:13mm*24mm;
·输入电压:176~264Vac 窄电压范围;
·输出功率:15W;
·拥有 LED 灯开路、短路、过温保护等功能;
·拥有电流采样电阻短路保护;
·输出效率:≥85%;
·BOM:16 个
内容目录
1.
2.
3.
4.
5.
6.
7.
8.
9.
电源介绍………………….………………………………………………………………………………2
电源规格明细………….…………………………………………………………………..…………..…2
原理图….…………………………………………………………………………………………………3
电路描述……….…………………………………………………………………………………………4
PCB LAYOUT ...….………………………………………………………………………………………4
Bill of Materials…………………………………………………………………………………………. .5
变压器规格…………………………………………………………………………...................………..6
电源工作情况和波形 ……………………………………………………………..…………………….7
EMC 与安规测试………………………………………………………………………………………. .14
页码: 1 / 16
中国无锡新区 长江路 21-1 号 8 楼
8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China
中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China
DER-8315-13-P060
Chipown
Design Example Report
1. 电源介绍
该报告提供了一种基于 PN8315 150V/120mA 单路输出开关电源。系统工作在准谐振模式来实现高效率和
低 EMI 的应用。芯片集成度高,BOM 器件个数少,具有 LED 灯开路、短路、过温保护等功能
该报告包含了原理图,电源输入输出规格,BOM 表,变压器参数和 PCB LAYOUT 等数据表单。
以下为该电源的实物图片:
2.电源规格明细
最大输入输出电气特性:
项目描述
标号
Min
Typ
Max
Unit
备注
输入电压
Vin
176
230
264
Vac
50Hz
输出电压
Vout
40
110
V
输出电流
Iout
142.5
157.5
mA
输出功率
Pout
6
16.5
W
η
85
Tamb
0
效
率
工作环境
150
%
25
80
CV=100V
℃
页码: 2 / 16
中国无锡新区 长江路 21-1 号 8 楼
8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China
中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China
DER-8315-13-P060
Design Example Report
Chipown
3.电源原理图
Note: 具体参数以 BOM 为准
页码: 3 / 16
中国无锡新区 长江路 21-1 号 8 楼
8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China
中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China
DER-8315-13-P060
Design Example Report
4.
Chipown
电路描述
电路图中R4、R5为FB分压电阻,可通过辅助绕组采样出的电压,等比例调节R4、R5可实现LED输出
开环电压值, FB过电压保护点约为3V.
当 PN8315 本体温度太高时,其内置的 OTP 保护功能会及时启动,以保护整个系统;
该驱动具有 LED 短路、开路保护功能,当 LED 发生短路或开路时,系统将进入打嗝模式直到短路状
态消除。
5.
PCB
LAYOUT
PCB 为普通双面板工艺,双面元器件,铜厚 1OZ,基材为 FR-4。PCB 长 24mm,宽 13mm,厚 1mm。污
染等级符合 CLASS2。
页码: 4 / 16
中国无锡新区 长江路 21-1 号 8 楼
8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China
中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China
DER-8315-13-P060
Chipown
Design Example Report
6.
Bill of Materials
序号
元件标号
1
C1
2
C2
3
C3
4
C4
5
BD1
6
D1
7
F1
8
L1
9
R1
11
R2
12
R3
13
R4
14
R5
15
16
T1
U1
元件名称
电解电容
电解电容
电解电容
贴片电容
整流桥
快速二极管
玻璃保险丝
色环电感
贴片电阻
贴片电阻
贴片电阻
贴片电阻
贴片电阻
元件型号
封装尺寸
数量 备注
2.2uF/400V
6*10mm
1
2.2uF/400V
6*10mm
1
2.2uF/400V
6*10mm
1
4.7uF/25V
0805
1
MB6S
0510
1
US1J
SMD
1
P=10mm
1
1mH
0510
1
20K
0805
1
4.7R 1%
0805
1
2.7R 1%
0805
1
36K
0805
1
0805
1
EP-13
SOP8
1
1
2A/250V
1%
1.5M 1%
变压器
EE10 卧式 4+4, 4mH
IC
PN8315
页码: 5 / 16
中国无锡新区 长江路 21-1 号 8 楼
8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China
中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China
DER-8315-13-P060
Chipown
Design Example Report
7.
变压器规格
绕法示意图
骨架 EE10 卧式 4+4
5
N1
1
“START”
绕组顺序
绕组
起绕点
结束脚
线型
线径
圈数
外围胶带
绕法
N1
1
5
漆包线
0.15mm
300
2TS
密绕
备注:
1)
2,3,4,6,7 脚剪掉;
2)
1 脚到 5 脚电感量:4mH±200uH (10KHz,1V);
3) 气隙一定要磨磁芯中柱,不能垫气隙;
4) 需要真空浸;。
5) 漏感小于 400uH.
页码: 6 / 16
中国无锡新区 长江路 21-1 号 8 楼
8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China
中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China
DER-8315-13-P060
Design Example Report
Chipown
页码: 7 / 16
中国无锡新区 长江路 21-1 号 8 楼
8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China
中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China
DER-8315-13-P060
Chipown
Design Example Report
8.
电源输入输出特性和工作波形
1) Input power when LED short
Input Power
176V
200V
230V
264V
Pin(W)
0.07
0.083
0.097
0.117
0.14
0.12
0.1
0.08
Pin(W)
0.06
0.04
0.02
0
176V
200V
230V
264V
2) Input power when LED open
Input Power
176V
200V
230V
264V
Pin(W)
0.111
0.108
0.117
0.144
0.17
0.15
0.13
0.11
Pin(W)
0.09
0.07
0.05
0.03
0.01
176V
200V
230V
264V
页码: 8 / 16
中国无锡新区 长江路 21-1 号 8 楼
8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China
中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China
DER-8315-13-P060
Chipown
Design Example Report
3) 线性调整率与负载调整率
备注:如需满足低压176Vac 电流不下降,可适当加大输入电解电容,BP2832同样板子110VDC
输出/176VAC的电流也会下降到133mA。
输出电流(mA)
带载(Vo)
线性调整率
176Vac
200Vac
230Vac
264Vac
110
130.4
146.1
146.12
145.6
±5.53%
100
138.9
147.44
146.23
145.8
±2.95%
90
145.4
147.2
146.41
146.1
±0.61%
70
148.56
147.4
147.01
146.8
±0.59%
50
148.55
147.75
147.4
147.4
±0.38%
30
148.14
147.62
147.5
147.5
±0.21%
负载调整率
±6.33%
±0.56%
±0.47%
±0.64%
输出电流VS输出电压
输出电流VS输入电压
153
140
176Vac
200Vac
130
230Vac
264Vac
120
110
100
90
70
输出电压Vo(V)
50
30
输出电流Io(mA)
输出电流Io(mA)
150
148
143
带载110V
带载100V
138
带载90V
133
带载70V
128
带载30V
带载50V
176
200
230
264
输入电压Vin(Vac)
页码: 9 / 16
中国无锡新区 长江路 21-1 号 8 楼
8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China
中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China
DER-8315-13-P060
Chipown
Design Example Report
4) Efficiency
Note: 用电子负载CV模式模拟LED负载
效率(%)
带载(Vo)
176Vac
200Vac
230Vac
264Vac
110
92.01
92.52
92.88
92.71
100
92.14
92.55
92.64
92.43
90
91.64
92.18
92.29
92.10
70
90.93
91.38
91.29
91.21
50
89.55
89.80
89.54
89.30
30
86.11
86.24
85.86
85.31
输出电流V S 输入电压
96.00
效率(% )
94.00
带载60V
带载54V
带载48V
带载42V
带载36V
92.00
90.00
88.00
86.00
84.00
176
235
250
265
输入电压V i n ( V a c )
页码: 10 / 16
中国无锡新区 长江路 21-1 号 8 楼
8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China
中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China
DER-8315-13-P060
Chipown
Design Example Report
5) Startup
Figure 1. VIN = 176VAC, startup
Figure 2. VIN = 264VAC, startup
Vds –CH1 trace
100V/div
Vds –CH1 trace
100V/div
Vdd –CH2
trace
5V/div
Vdd –CH2
trace
5V/div
Vo – CH3
trace
20V/div
Vo – CH3
trace
20V/div
– CH4
trace
100mA/div
– CH4
trace
100mA/div
Io
Io
10ms
10ms
6) Power off
Figure 3. VIN = 176VAC, power off
Figure 4. VIN = 264VAC, power off
Vds –CH1 trace
100V/div
Vds –CH1 trace
100V/div
Vdd –CH2
trace
5V/div
Vdd –CH2
trace
5V/div
Vo – CH3
trace
20V/div
Vo – CH3
trace
20V/div
– CH4
trace
100mA/div
– CH4
trace
100mA/div
Io
500ms
Io
500ms
页码: 11 / 16
中国无锡新区 长江路 21-1 号 8 楼
8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China
中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China
DER-8315-13-P060
Chipown
Design Example Report
7) Operating waveforms
Figure 5. VIN = 176VAC normal operation
Figure 6. VIN = 264VAC normal operation
Vds –CH1 trace
100V/div
Vds –CH1 trace
100V/div
Vdd –CH2
trace
5V/div
Vdd –CH2
trace
5V/div
Vo – CH3
trace
20V/div
Vo – CH3
trace
20V/div
– CH4
trace
100mA/div
– CH4
trace
100mA/div
Io
Io
2ms
2ms
8 )Ripple & Noise
Figure 7. VIN = 176VAC,
Vo – CH3 trace
Io
–CH4
trace
Figure 8. VIN = 264VAC,
20V/div
100mA/div
200ms
Vo – CH3 trace
Io
–CH4
20V/div
trace
100mA/div
5ms
页码: 12 / 16
中国无锡新区 长江路 21-1 号 8 楼
8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China
中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China
DER-8315-13-P060
Chipown
Design Example Report
9) LED Short Protection
Figure 9. VIN = 176VAC, Short Protection
Figure 10. VIN = 264VAC, Short Protection
Vds –CH1 trace
100V/div
Vds –CH1 trace
100V/div
Vdd –CH2
trace
5V/div
Vdd –CH2
trace
5V/div
Vo – CH3
trace
20V/div
Vo – CH3
trace
20V/div
– CH4
trace
100mA/div
– CH4
trace
100mA/div
Io
Io
10ms
10ms
10) LED Open Protection
Figure 11. VIN = 176VAC LED Open
Figure 12. VIN = 264VAC LED Open
Vds –CH1 trace
100V/div
Vds –CH1 trace
100V/div
Vdd –CH2
trace
5V/div
Vdd –CH2
trace
5V/div
Vo – CH3
trace
20V/div
Vo – CH3
trace
20V/div
– CH4
trace
100mA/div
– CH4
trace
100mA/div
Io
5ms
Io
5ms
页码: 13 / 16
中国无锡新区 长江路 21-1 号 8 楼
8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China
中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China
DER-8315-13-P060
Chipown
Design Example Report
9.电源 EMI 测试
1) 传导测试
此电源产品传导性能能够满足 EN55015_CE_Mains_ClassB 的测试标准,
Limit: EN55015_CE_Mains_ClassB
Margin:
L= 7.63db
Power: AC 220V/50Hz
Limit: EN55015_CE_Mains_ClassB
Margin:
N =8.28db
Power: AC 220V/50Hz
页码: 14 / 16
中国无锡新区 长江路 21-1 号 8 楼
8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China
中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China
DER-8315-13-P060
Chipown
Design Example Report
2) EFT Test
Electrical Fast Transient/Burst Measurement Results
Test Site
TR2
Temperature
26C
EUT:
110V150mA
Humidity :
48%RH
M/N:
Barometric Pressure
101.3kPa
S/N:
Input Voltage:
230V,50Hz
Test Mode:
Normal operation
Standard:
EN 55024: 1998+A1: 2001+A2: 2003, IEC 61000-4-4: 2004
Measurement
Equipment:
Immunity Test System (M/N: EMCPro) (Cali. Due Date: 2012.04.23)
CCL (M/N: CCL) (Cali. Due Date: 2012.04.23)
Input a.c. power ports (Tr/Th: 5/50ns, Repetition Frequency: 5kHz)
Inject
Line
Polarity
Test Level Test Duration Inject Performance Test Result
Result Observation
(kV)
(second)
Method criterion
criterion
L
+
0.5
60
Direct
B
A
Pass
Note
L
-
0.5
60
Direct
B
A
Pass
Note
N
+
0.5
60
Direct
B
A
Pass
Note
N
-
0.5
60
Direct
B
A
Pass
Note
L+N
+
0.5
60
Direct
B
A
Pass
Note
L+N
-
0.5
60
Direct
B
A
Pass
Note
Input a.c. power ports (Tr/Th: 5/50ns, Repetition Frequency: 100kHz)
Inject
Line
Polarity
Test Level Test Duration Inject Performance Test Result
Result Observation
(kV)
(second)
Method criterion
criterion
L
+
0.5
60
Direct
B
A
Pass
Note
L
-
0.5
60
Direct
B
A
Pass
Note
N
+
0.5
60
Direct
B
A
Pass
Note
N
-
0.5
60
Direct
B
A
Pass
Note
L+N
+
0.5
60
Direct
B
A
Pass
Note
L+N
-
0.5
60
Direct
B
A
Pass
Note
Note: There was no change compared with initial operation during the test.
页码: 15 / 16
中国无锡新区 长江路 21-1 号 8 楼
8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China
中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China
DER-8315-13-P060
Chipown
Design Example Report
3) Surge Test
Surge Immunity Test Results
Test Site
TR1
Temperature
26C
EUT:
110V150mA
Humidity :
48%RH
M/N:
Barometric Pressure
101.3kPa
S/N:
Input Voltage:
230 V, 50 Hz
Standard:
Measuremen
t Equipment:
EN 55024:2010; IEC 61000-4-5:2005
Immunity Test System (M/N: EMCPro) (Cali. Due Date: 2012.04.23)
Coupler/Decoupler Telecom Line (M/N: CM-TELCD) (Cali. Due Date: N/A)
Coupler/Decoupler Signal Line (M/N: CM-I/OCD (Cali. Due Date: N/A)
Input a.c. power ports [Tr/Th: 1.2/50us (8/20us)]
Inject
Line
Polarit Angle Test Level Test Interval Performance Test Result
Result
y
(degree)
(kV)
(second)
criterion
criterion
Observation
L+N
+
0
0.5
60
B
A
Pass
Note1
L+N
-
0
0.5
60
B
A
Pass
Note1
L+N
+
90
0.5
60
B
A
Pass
Note1
L+N
-
90
0.5
60
B
A
Pass
Note1
L+N
+
180
0.5
60
B
A
Pass
Note1
L+N
-
180
0.5
60
B
A
Pass
Note1
L+N
+
270
0.5
60
B
A
Pass
Note1
L+N
-
270
0.5
60
B
A
Pass
Note1
Note1: There was no change operated with initial operating during the test.
页码: 16 / 16
中国无锡新区 长江路 21-1 号 8 楼
8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China
中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China