DER-8315-13-P060 Design Example Report 标题 Chipown 基于 PN8315 的 15W LED 应用方案 110V150mA (过 CE 版) 输入电压:176~264V 电压 规格 输出功率:16.5W 输出电压:110V 输出电流:150mA±3% 应用范围 LED 照明类电源产品(球泡灯、筒灯、平板灯) 文件编号 DER-8315-13-P060 特性概述: ·双面板设计,双面元器件,面积:13mm*24mm; ·输入电压:176~264Vac 窄电压范围; ·输出功率:15W; ·拥有 LED 灯开路、短路、过温保护等功能; ·拥有电流采样电阻短路保护; ·输出效率:≥85%; ·BOM:16 个 内容目录 1. 2. 3. 4. 5. 6. 7. 8. 9. 电源介绍………………….………………………………………………………………………………2 电源规格明细………….…………………………………………………………………..…………..…2 原理图….…………………………………………………………………………………………………3 电路描述……….…………………………………………………………………………………………4 PCB LAYOUT ...….………………………………………………………………………………………4 Bill of Materials…………………………………………………………………………………………. .5 变压器规格…………………………………………………………………………...................………..6 电源工作情况和波形 ……………………………………………………………..…………………….7 EMC 与安规测试………………………………………………………………………………………. .14 页码: 1 / 16 中国无锡新区 长江路 21-1 号 8 楼 8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China 中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China DER-8315-13-P060 Chipown Design Example Report 1. 电源介绍 该报告提供了一种基于 PN8315 150V/120mA 单路输出开关电源。系统工作在准谐振模式来实现高效率和 低 EMI 的应用。芯片集成度高,BOM 器件个数少,具有 LED 灯开路、短路、过温保护等功能 该报告包含了原理图,电源输入输出规格,BOM 表,变压器参数和 PCB LAYOUT 等数据表单。 以下为该电源的实物图片: 2.电源规格明细 最大输入输出电气特性: 项目描述 标号 Min Typ Max Unit 备注 输入电压 Vin 176 230 264 Vac 50Hz 输出电压 Vout 40 110 V 输出电流 Iout 142.5 157.5 mA 输出功率 Pout 6 16.5 W η 85 Tamb 0 效 率 工作环境 150 % 25 80 CV=100V ℃ 页码: 2 / 16 中国无锡新区 长江路 21-1 号 8 楼 8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China 中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China DER-8315-13-P060 Design Example Report Chipown 3.电源原理图 Note: 具体参数以 BOM 为准 页码: 3 / 16 中国无锡新区 长江路 21-1 号 8 楼 8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China 中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China DER-8315-13-P060 Design Example Report 4. Chipown 电路描述 电路图中R4、R5为FB分压电阻,可通过辅助绕组采样出的电压,等比例调节R4、R5可实现LED输出 开环电压值, FB过电压保护点约为3V. 当 PN8315 本体温度太高时,其内置的 OTP 保护功能会及时启动,以保护整个系统; 该驱动具有 LED 短路、开路保护功能,当 LED 发生短路或开路时,系统将进入打嗝模式直到短路状 态消除。 5. PCB LAYOUT PCB 为普通双面板工艺,双面元器件,铜厚 1OZ,基材为 FR-4。PCB 长 24mm,宽 13mm,厚 1mm。污 染等级符合 CLASS2。 页码: 4 / 16 中国无锡新区 长江路 21-1 号 8 楼 8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China 中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China DER-8315-13-P060 Chipown Design Example Report 6. Bill of Materials 序号 元件标号 1 C1 2 C2 3 C3 4 C4 5 BD1 6 D1 7 F1 8 L1 9 R1 11 R2 12 R3 13 R4 14 R5 15 16 T1 U1 元件名称 电解电容 电解电容 电解电容 贴片电容 整流桥 快速二极管 玻璃保险丝 色环电感 贴片电阻 贴片电阻 贴片电阻 贴片电阻 贴片电阻 元件型号 封装尺寸 数量 备注 2.2uF/400V 6*10mm 1 2.2uF/400V 6*10mm 1 2.2uF/400V 6*10mm 1 4.7uF/25V 0805 1 MB6S 0510 1 US1J SMD 1 P=10mm 1 1mH 0510 1 20K 0805 1 4.7R 1% 0805 1 2.7R 1% 0805 1 36K 0805 1 0805 1 EP-13 SOP8 1 1 2A/250V 1% 1.5M 1% 变压器 EE10 卧式 4+4, 4mH IC PN8315 页码: 5 / 16 中国无锡新区 长江路 21-1 号 8 楼 8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China 中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China DER-8315-13-P060 Chipown Design Example Report 7. 变压器规格 绕法示意图 骨架 EE10 卧式 4+4 5 N1 1 “START” 绕组顺序 绕组 起绕点 结束脚 线型 线径 圈数 外围胶带 绕法 N1 1 5 漆包线 0.15mm 300 2TS 密绕 备注: 1) 2,3,4,6,7 脚剪掉; 2) 1 脚到 5 脚电感量:4mH±200uH (10KHz,1V); 3) 气隙一定要磨磁芯中柱,不能垫气隙; 4) 需要真空浸;。 5) 漏感小于 400uH. 页码: 6 / 16 中国无锡新区 长江路 21-1 号 8 楼 8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China 中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China DER-8315-13-P060 Design Example Report Chipown 页码: 7 / 16 中国无锡新区 长江路 21-1 号 8 楼 8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China 中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China DER-8315-13-P060 Chipown Design Example Report 8. 电源输入输出特性和工作波形 1) Input power when LED short Input Power 176V 200V 230V 264V Pin(W) 0.07 0.083 0.097 0.117 0.14 0.12 0.1 0.08 Pin(W) 0.06 0.04 0.02 0 176V 200V 230V 264V 2) Input power when LED open Input Power 176V 200V 230V 264V Pin(W) 0.111 0.108 0.117 0.144 0.17 0.15 0.13 0.11 Pin(W) 0.09 0.07 0.05 0.03 0.01 176V 200V 230V 264V 页码: 8 / 16 中国无锡新区 长江路 21-1 号 8 楼 8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China 中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China DER-8315-13-P060 Chipown Design Example Report 3) 线性调整率与负载调整率 备注:如需满足低压176Vac 电流不下降,可适当加大输入电解电容,BP2832同样板子110VDC 输出/176VAC的电流也会下降到133mA。 输出电流(mA) 带载(Vo) 线性调整率 176Vac 200Vac 230Vac 264Vac 110 130.4 146.1 146.12 145.6 ±5.53% 100 138.9 147.44 146.23 145.8 ±2.95% 90 145.4 147.2 146.41 146.1 ±0.61% 70 148.56 147.4 147.01 146.8 ±0.59% 50 148.55 147.75 147.4 147.4 ±0.38% 30 148.14 147.62 147.5 147.5 ±0.21% 负载调整率 ±6.33% ±0.56% ±0.47% ±0.64% 输出电流VS输出电压 输出电流VS输入电压 153 140 176Vac 200Vac 130 230Vac 264Vac 120 110 100 90 70 输出电压Vo(V) 50 30 输出电流Io(mA) 输出电流Io(mA) 150 148 143 带载110V 带载100V 138 带载90V 133 带载70V 128 带载30V 带载50V 176 200 230 264 输入电压Vin(Vac) 页码: 9 / 16 中国无锡新区 长江路 21-1 号 8 楼 8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China 中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China DER-8315-13-P060 Chipown Design Example Report 4) Efficiency Note: 用电子负载CV模式模拟LED负载 效率(%) 带载(Vo) 176Vac 200Vac 230Vac 264Vac 110 92.01 92.52 92.88 92.71 100 92.14 92.55 92.64 92.43 90 91.64 92.18 92.29 92.10 70 90.93 91.38 91.29 91.21 50 89.55 89.80 89.54 89.30 30 86.11 86.24 85.86 85.31 输出电流V S 输入电压 96.00 效率(% ) 94.00 带载60V 带载54V 带载48V 带载42V 带载36V 92.00 90.00 88.00 86.00 84.00 176 235 250 265 输入电压V i n ( V a c ) 页码: 10 / 16 中国无锡新区 长江路 21-1 号 8 楼 8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China 中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China DER-8315-13-P060 Chipown Design Example Report 5) Startup Figure 1. VIN = 176VAC, startup Figure 2. VIN = 264VAC, startup Vds –CH1 trace 100V/div Vds –CH1 trace 100V/div Vdd –CH2 trace 5V/div Vdd –CH2 trace 5V/div Vo – CH3 trace 20V/div Vo – CH3 trace 20V/div – CH4 trace 100mA/div – CH4 trace 100mA/div Io Io 10ms 10ms 6) Power off Figure 3. VIN = 176VAC, power off Figure 4. VIN = 264VAC, power off Vds –CH1 trace 100V/div Vds –CH1 trace 100V/div Vdd –CH2 trace 5V/div Vdd –CH2 trace 5V/div Vo – CH3 trace 20V/div Vo – CH3 trace 20V/div – CH4 trace 100mA/div – CH4 trace 100mA/div Io 500ms Io 500ms 页码: 11 / 16 中国无锡新区 长江路 21-1 号 8 楼 8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China 中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China DER-8315-13-P060 Chipown Design Example Report 7) Operating waveforms Figure 5. VIN = 176VAC normal operation Figure 6. VIN = 264VAC normal operation Vds –CH1 trace 100V/div Vds –CH1 trace 100V/div Vdd –CH2 trace 5V/div Vdd –CH2 trace 5V/div Vo – CH3 trace 20V/div Vo – CH3 trace 20V/div – CH4 trace 100mA/div – CH4 trace 100mA/div Io Io 2ms 2ms 8 )Ripple & Noise Figure 7. VIN = 176VAC, Vo – CH3 trace Io –CH4 trace Figure 8. VIN = 264VAC, 20V/div 100mA/div 200ms Vo – CH3 trace Io –CH4 20V/div trace 100mA/div 5ms 页码: 12 / 16 中国无锡新区 长江路 21-1 号 8 楼 8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China 中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China DER-8315-13-P060 Chipown Design Example Report 9) LED Short Protection Figure 9. VIN = 176VAC, Short Protection Figure 10. VIN = 264VAC, Short Protection Vds –CH1 trace 100V/div Vds –CH1 trace 100V/div Vdd –CH2 trace 5V/div Vdd –CH2 trace 5V/div Vo – CH3 trace 20V/div Vo – CH3 trace 20V/div – CH4 trace 100mA/div – CH4 trace 100mA/div Io Io 10ms 10ms 10) LED Open Protection Figure 11. VIN = 176VAC LED Open Figure 12. VIN = 264VAC LED Open Vds –CH1 trace 100V/div Vds –CH1 trace 100V/div Vdd –CH2 trace 5V/div Vdd –CH2 trace 5V/div Vo – CH3 trace 20V/div Vo – CH3 trace 20V/div – CH4 trace 100mA/div – CH4 trace 100mA/div Io 5ms Io 5ms 页码: 13 / 16 中国无锡新区 长江路 21-1 号 8 楼 8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China 中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China DER-8315-13-P060 Chipown Design Example Report 9.电源 EMI 测试 1) 传导测试 此电源产品传导性能能够满足 EN55015_CE_Mains_ClassB 的测试标准, Limit: EN55015_CE_Mains_ClassB Margin: L= 7.63db Power: AC 220V/50Hz Limit: EN55015_CE_Mains_ClassB Margin: N =8.28db Power: AC 220V/50Hz 页码: 14 / 16 中国无锡新区 长江路 21-1 号 8 楼 8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China 中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China DER-8315-13-P060 Chipown Design Example Report 2) EFT Test Electrical Fast Transient/Burst Measurement Results Test Site TR2 Temperature 26C EUT: 110V150mA Humidity : 48%RH M/N: Barometric Pressure 101.3kPa S/N: Input Voltage: 230V,50Hz Test Mode: Normal operation Standard: EN 55024: 1998+A1: 2001+A2: 2003, IEC 61000-4-4: 2004 Measurement Equipment: Immunity Test System (M/N: EMCPro) (Cali. Due Date: 2012.04.23) CCL (M/N: CCL) (Cali. Due Date: 2012.04.23) Input a.c. power ports (Tr/Th: 5/50ns, Repetition Frequency: 5kHz) Inject Line Polarity Test Level Test Duration Inject Performance Test Result Result Observation (kV) (second) Method criterion criterion L + 0.5 60 Direct B A Pass Note L - 0.5 60 Direct B A Pass Note N + 0.5 60 Direct B A Pass Note N - 0.5 60 Direct B A Pass Note L+N + 0.5 60 Direct B A Pass Note L+N - 0.5 60 Direct B A Pass Note Input a.c. power ports (Tr/Th: 5/50ns, Repetition Frequency: 100kHz) Inject Line Polarity Test Level Test Duration Inject Performance Test Result Result Observation (kV) (second) Method criterion criterion L + 0.5 60 Direct B A Pass Note L - 0.5 60 Direct B A Pass Note N + 0.5 60 Direct B A Pass Note N - 0.5 60 Direct B A Pass Note L+N + 0.5 60 Direct B A Pass Note L+N - 0.5 60 Direct B A Pass Note Note: There was no change compared with initial operation during the test. 页码: 15 / 16 中国无锡新区 长江路 21-1 号 8 楼 8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China 中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China DER-8315-13-P060 Chipown Design Example Report 3) Surge Test Surge Immunity Test Results Test Site TR1 Temperature 26C EUT: 110V150mA Humidity : 48%RH M/N: Barometric Pressure 101.3kPa S/N: Input Voltage: 230 V, 50 Hz Standard: Measuremen t Equipment: EN 55024:2010; IEC 61000-4-5:2005 Immunity Test System (M/N: EMCPro) (Cali. Due Date: 2012.04.23) Coupler/Decoupler Telecom Line (M/N: CM-TELCD) (Cali. Due Date: N/A) Coupler/Decoupler Signal Line (M/N: CM-I/OCD (Cali. Due Date: N/A) Input a.c. power ports [Tr/Th: 1.2/50us (8/20us)] Inject Line Polarit Angle Test Level Test Interval Performance Test Result Result y (degree) (kV) (second) criterion criterion Observation L+N + 0 0.5 60 B A Pass Note1 L+N - 0 0.5 60 B A Pass Note1 L+N + 90 0.5 60 B A Pass Note1 L+N - 90 0.5 60 B A Pass Note1 L+N + 180 0.5 60 B A Pass Note1 L+N - 180 0.5 60 B A Pass Note1 L+N + 270 0.5 60 B A Pass Note1 L+N - 270 0.5 60 B A Pass Note1 Note1: There was no change operated with initial operating during the test. 页码: 16 / 16 中国无锡新区 长江路 21-1 号 8 楼 8/F Chuangyuan Hall, 21-1 Changjiang Road, New Destrict, Wuxi, 214028, P.R.China 中国苏州工业园区 林泉街 399 号 1 号楼 3 楼 3/F Building 1, 399 Linquani Road, Industrial Park, Suzhou, 215123, P.R.China