AON7536 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application VDS 30V 68A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 4.2mΩ RDS(ON) (at VGS=4.5V) < 6.2mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial DFN 3.3x3.3 EP Bottom View Top View D Top View Pin 1 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C V A 150 24 IDSM TA=70°C ±20 43 IDM TA=25°C Continuous Drain Current Units V 68 ID TC=100°C Maximum 30 A 19 IAS 60 A Avalanche energy L=0.01mH C EAS 18 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.1.0: October 2013 4.1 Steady-State Steady-State RθJA RθJC W 2.6 TJ, TSTG Symbol t ≤ 10s W 13 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 32.5 °C -55 to 150 Typ 25 50 3.1 www.aosmd.com Max 30 60 3.8 Units °C/W °C/W °C/W Page 1 of 6 AON7536 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance f=1MHz ±100 nA 2.2 V 3.5 4.2 5.3 6.4 4.9 6.2 mΩ 1 V 36 A 1950 2350 pF 480 630 pF 80 140 pF 0.5 1.0 Ω 28 40 nC 12.7 20 nC 5.6 12 nC 72 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge 1.8 0.68 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance µA 5 1.4 0.2 Units V 1 TJ=55°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS Coss Typ mΩ S Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 4.4 10 nC tD(on) Turn-On DelayTime 7.5 16 ns VGS=10V, VDS=15V, ID=20A tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 3 8 ns 21 30 ns 2 7 ns 14.2 ns nC 31 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: October 2013 www.aosmd.com Page 2 of 6 AON7536 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 4V 80 80 4.5V 3.5V 60 ID(A) ID (A) 60 125°C 40 40 20 20 25°C VGS=3V 0 0 0 1 2 3 4 0 5 7 2 3 4 5 6 Normalized On-Resistance 1.8 6 VGS=4.5V RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 5 4 3 VGS=10V 2 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 1 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 12 1.0E+02 ID=20A 1.0E+01 10 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 8 6 4 1.0E-01 125°C 1.0E-02 25°C 1.0E-03 25°C 2 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: October 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7536 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=15V ID=20A Ciss 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 1500 1000 Coss 500 Crss 0 0 0 5 10 15 20 25 30 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 500 1000.0 RDS(ON) limited 10.0 100µs 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 TJ(Max)=150°C TC=25°C 400 10µs Power (W) 10µs 100.0 ID (Amps) 5 300 200 100 0.1 1 10 100 0 1E-05 0.0001 0.001 VDS (Volts) 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=3.8°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: October 2013 www.aosmd.com Page 4 of 6 AON7536 40 80 30 60 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10 40 20 0 0 0 25 50 75 100 125 150 0 25 TCASE (° °C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: October 2013 www.aosmd.com Page 5 of 6 AON7536 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.1.0: October 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6