万和兴电子有限公司 www.whxpcb.com AO4578 30V N-Channel MOSFET General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application VDS ID (at VGS=10V) 30V 20A RDS(ON) (at VGS=10V) < 5.7mΩ RDS(ON) (at VGS=4.5V) < 9mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Units V ±20 V 20 ID TA=70°C Maximum 30 15 A Pulsed Drain Current C IDM 120 Avalanche Current C IAS 40 A Avalanche energy L=0.01mH C EAS 8 mJ 36 V VDS Spike Power Dissipation B 100ns TA=25°C VSPIKE PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: August 2013 3.1 Steady-State Steady-State -55 to 150 TJ, TSTG Symbol t ≤ 10s W 2 RθJA RθJL www.aosmd.com Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4578 万和兴电子有限公司 www.whxpcb.com Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS,ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1.8 ±100 nA 2.2 V 4.7 5.7 6.5 7.8 7.2 9 mΩ 1 V 4.2 A 62 0.7 f=1MHz VGS=10V, VDS=15V, ID=20A Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 0.7 mΩ S 1128 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA 5 1.4 Units V 1 TJ=55°C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ pF 435 pF 59 pF 1.4 2.1 Ω 16.2 25 nC 7.4 15 nC 4.3 nC Gate Drain Charge 2.3 nC Turn-On DelayTime 5.5 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 3 ns 22.5 ns 3 ns 13.3 ns nC 25 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: August 2013 www.aosmd.com Page 2 of 5 AO4578 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 10V VDS=5V 4.5V 60 60 3.5V 40 ID(A) ID (A) 6V 40 125°C 20 20 25°C VGS=3V 0 0 0 1 2 3 4 0 5 10 2 3 4 5 6 1.8 Normalized On-Resistance VGS=4.5V 8 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 4 VGS=10V 2 1.6 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 15 ID=20A 1.0E+01 12 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 125°C 125°C 9 6 1.0E-01 1.0E-02 25°C 1.0E-03 25°C 3 1.0E-04 1.0E-05 0 2 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: August 2013 4 10 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO4578 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=15V ID=20A Capacitance (pF) 6 4 900 300 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 20 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 10.0 100µs 1ms 10ms RDS(ON) limited 100 10 10s DC TJ(Max)=150°C TA=25°C 1 0.0 0.00001 0.1 30 TA=25°C 10µs 0.01 10 1000 100.0 0.1 Crss 0 IDM limited 1.0 Coss 600 2 0 ID (Amps) Ciss 1200 Power (W) VGS (Volts) 8 1 VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: August 2013 www.aosmd.com Page 4 of 5 AO4578 万和兴电子有限公司 www.whxpcb.com Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D io d e R eco very T est C ircu it & W a vefo rm s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev.1.0: August 2013 Isd L + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5