WHXPCB AO4578

万和兴电子有限公司 www.whxpcb.com
AO4578
30V N-Channel MOSFET
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
VDS
ID (at VGS=10V)
30V
20A
RDS(ON) (at VGS=10V)
< 5.7mΩ
RDS(ON) (at VGS=4.5V)
< 9mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Units
V
±20
V
20
ID
TA=70°C
Maximum
30
15
A
Pulsed Drain Current C
IDM
120
Avalanche Current C
IAS
40
A
Avalanche energy L=0.01mH C
EAS
8
mJ
36
V
VDS Spike
Power Dissipation B
100ns
TA=25°C
VSPIKE
PD
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev.1.0: August 2013
3.1
Steady-State
Steady-State
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
2
RθJA
RθJL
www.aosmd.com
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4578
万和兴电子有限公司 www.whxpcb.com
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS，ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
1.8
±100
nA
2.2
V
4.7
5.7
6.5
7.8
7.2
9
mΩ
1
V
4.2
A
62
0.7
f=1MHz
VGS=10V, VDS=15V, ID=20A
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
0.7
mΩ
S
1128
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
µA
5
1.4
Units
V
1
TJ=55°C
IGSS
Max
30
VDS=30V, VGS=0V
VGS(th)
Coss
Typ
pF
435
pF
59
pF
1.4
2.1
Ω
16.2
25
nC
7.4
15
nC
4.3
nC
Gate Drain Charge
2.3
nC
Turn-On DelayTime
5.5
ns
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=500A/µs
3
ns
22.5
ns
3
ns
13.3
ns
nC
25
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: August 2013
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Page 2 of 5
AO4578
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
10V
VDS=5V
4.5V
60
60
3.5V
40
ID(A)
ID (A)
6V
40
125°C
20
20
25°C
VGS=3V
0
0
0
1
2
3
4
0
5
10
2
3
4
5
6
1.8
Normalized On-Resistance
VGS=4.5V
8
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
4
VGS=10V
2
1.6
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
10
15
20
25
0
30
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
15
ID=20A
1.0E+01
12
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
125°C
125°C
9
6
1.0E-01
1.0E-02
25°C
1.0E-03
25°C
3
1.0E-04
1.0E-05
0
2
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: August 2013
4
10
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO4578
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1500
VDS=15V
ID=20A
Capacitance (pF)
6
4
900
300
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000.0
20
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
10.0
100µs
1ms
10ms
RDS(ON)
limited
100
10
10s
DC
TJ(Max)=150°C
TA=25°C
1
0.0
0.00001
0.1
30
TA=25°C
10µs
0.01
10
1000
100.0
0.1
Crss
0
IDM limited
1.0
Coss
600
2
0
ID (Amps)
Ciss
1200
Power (W)
VGS (Volts)
8
1
VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: August 2013
www.aosmd.com
Page 4 of 5
AO4578
万和兴电子有限公司 www.whxpcb.com
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D io d e R eco very T est C ircu it & W a vefo rm s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev.1.0: August 2013
Isd
L
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5