Analog Power AM5N50 N-Channel 500-V (D-S) MOSFET Key Features: • Low rDS(on) technology • Low thermal impedance • Fast switching speed VDS (V) 500 PRODUCT SUMMARY rDS(on) (Ω) 1.5 @ VGS = 10V ID(A) 4.5 TO-220 Typical Applications: • Electronic ballast • Electronic transformer • Switch mode power supply ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 a TC=25°C ID 4.5 Continuous Drain Current IDM Pulsed Drain Current b 18 a IS 4.5 Continuous Source Current (Diode Conduction) a T =25°C P 74 Power Dissipation C D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case a Symbol Maximum RθJA 62.5 RθJC 1.7 Units V A A W °C Units °C/W Notes a. Package limited b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS-AM5N50_2010 Analog Power Parameter AM5N50 Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125°C VDS = 10 V, VGS = 10 V VGS = 10 V, ID = 2.7 A VDS = 50 V, ID = 2.7 A IS = 4.5 A, VGS = 0 V Dynamic VDS = 400 V, VGS = 10 V, ID = 3.1 A VDD = 250 V, RL = 79 Ω , ID = 3.1 A, VGEN = 10 V, RGEN = 12 Ω VDS = 25 V, VGS = 0 V, f =1MHz Min Typ 2 Max Unit 4 ±100 25 250 V nA 5 1.5 2.5 1.6 26 4 15 12.8 7.4 38.0 19.6 623 112 24 uA A Ω S V nC ns pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer‟s technical experts. APL does not convey any license under its patent rights nor the rights of others. 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APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS-AM5N50_2010 Analog Power AM5N50 Typical Electrical Characteristics 3 4 2.5 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 3.5 2 5V 5.5V 1.5 6V 8V,10V,15V 1 0.5 3 2.5 2 1.5 1 0.5 0 0 0 1 2 3 4 5 0 ID-Drain Current (A) 1. On-Resistance vs. Drain Current 6 8 10 TJ = 25°C TJ = 25°C ID = 3.1A 3 IS - Source Current (A) RDS(on) - On-Resistance (Ω) 4 2. Transfer Characteristics 3.5 2.5 2 1.5 1 1 0.1 0.5 0 0.01 0 5 10 15 0 VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 5 1400 5.5V Capacitance (pf) 3 2.5 2 5V 1200 1000 600 400 0.5 200 0 0 2 4 6 8 10 Coss Crss 0 10 20 30 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary Ciss 800 1 0 F = 1MHz 1600 3.5 1.5 1.5 1800 6V 4 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 4. Drain-to-Source Forward Voltage 15V,10V,8V 4.5 ID - Drain Current (A) 2 VGS - Gate-to-Source Voltage (V) 6. Capacitance 3 Publication Order Number: DS-AM5N50_2010 Analog Power AM5N50 Typical Electrical Characteristics 3 15 ID = 3.1A 2.5 RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) VDS = 400V 12 9 6 3 2 1.5 1 0.5 0 0 0 10 20 30 -50 -25 40 0 7. Gate Charge 50 75 100 125 150 175 8. Normalized On-Resistance Vs Junction Temperature 100 PEAKTRANSIENT POWER (W) 500 10 10 uS 100 uS ID Current (A) 25 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 1 mS 1 10 mS 100 mS 1 SEC IDM Limit limited by RDS 0.1 450 400 350 300 250 200 150 100 0.01 50 0 1 10 100 1000 10000 0.001 0.01 0.1 VDS Drain to Source Voltage (V) 1 10 100 1000 t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 62.5 °C /W 0.1 0.05 P(pk) 0.02 t1 t2 0.01 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS-AM5N50_2010 Analog Power AM5N50 Package Information TO-220 Symbol A B B1 „b1 C D D1 © Preliminary Min 4 1.2 1 0.65 0.4 15 5.9 Max 4.8 1.4 1.3 1 0.55 16.5 6.9 Typical -------- 5 Symbol E e F L L1 Q Q1 P Min 9.9 -1.1 12.5 3 2.5 2 -- Max 10.7 -1.4 14.5 4 3 2.9 -- Typical -------3.8 Publication Order Number: DS-AM5N50_2010