AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 600V@150℃ 22A RDS(ON) (at VGS=10V) < 0.26Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT22N50L&AOTF22N50L Top View TO-220F TO-220 G D D G S AOT22N50 G D S S AOTF22N50 Orderable Part Number Package Type Form Minimum Order Quantity AOT22N50L AOTF22N50 AOTF22N50L TO220 Green TO-220F Pb Free TO-220F Green Tube Tube Tube 1000 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT22N50 Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOTF22N50 AOTF22N50L 500 ±30 Units V V 22 22* 22* 15 15* 15* A Pulsed Drain Current C IDM Avalanche Current C IAR 7 A Repetitive avalanche energy C EAR 735 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS dv/dt 1470 5 50 mJ V/ns W Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D PD 417 3.3 TL 0.4 -55 to 150 39 0.3 300 Symbol RθJA RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.2.0: October 2014 88 AOT22N50 65 0.5 0.3 www.aosmd.com °C AOTF22N50 AOTF22N50L 65 65 -2.5 W/ oC °C -3.2 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 600 V ID=250µA, VGS=0V 0.57 V/ oC VDS=500V, VGS=0V 1 VDS=400V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=11A gFS Forward Transconductance VDS=40V, ID=11A 25 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 ±100 3.4 µA 4 4.5 nΑ V 0.21 0.26 Ω 1 V S IS Maximum Body-Diode Continuous Current 22 A ISM Maximum Body-Diode Pulsed Current 88 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 2465 3086 3710 pF VGS=0V, VDS=25V, f=1MHz 200 290 380 pF 14 24 35 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω 55 69 83 nC 17 22 27 nC 12 24 36 nC SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=400V, ID=22A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=22A,dI/dt=100A/µs,VDS=100V 415 524 630 Qrr Body Diode Reverse Recovery Charge IF=22A,dI/dt=100A/µs,VDS=100V 7.5 9.6 12 Body Diode Reverse Recovery Time VGS=10V, VDS=250V, ID=22A, RG=25Ω 60 ns 122 ns 124 ns 77 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=7A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: October 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 40 VDS=40V 10V 30 6.5V 20 -55°C ID(A) ID (A) 10 6V 125°C 1 10 VGS=5.5V 25°C 0 0 5 10 15 20 25 0.1 30 0 2 VDS (Volts) Fig 1: On-Region Characteristics 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 0.4 Normalized On-Resistance 3 0.3 RDS(ON) (Ω) 4 VGS=10V 0.2 0.1 5 10 15 20 2 1.5 1 0.5 0 -100 0.0 0 VGS=10V ID=11A 2.5 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.2 1.0E+02 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 1.0E-02 25°C 0.9 1.0E-03 0.8 -100 1.0E-04 -50 0 50 100 150 200 TJ (°C) Figure 5: Break Down vs. Junction Temperature Rev.2.0: October 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 Ciss VDS=400V ID=22A Capacitance (pF) VGS (Volts) 12 9 6 1000 Coss 100 Crss 3 0 10 0 20 40 60 80 Qg (nC) Figure 7: Gate-Charge Characteristics 100 0.1 100 100 100 10µs RDS(ON) limited 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100µs RDS(ON) limited 100µs 10 1ms 10 10ms 10ms 1 ID (Amps) ID (Amps) 1ms DC 0.1 1s 0.1 TJ(Max)=150°C TC=25°C TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 1 VDS (Volts) 100 RDS(ON) limited 100µs 10ms 1 DC 0.1s 1s 0.1 1000 20 Current rating ID(A) 1ms 100 25 10µs 10 10 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF22N50 (Note F) Figure 9: Maximum Forward Biased Safe Operating Area for AOT22N50 (Note F) ID (Amps) 0.1s DC 1 15 10 5 TJ(Max)=150°C TC=25°C 0.01 0 1 10 100 1000 VDS (Volts) Figure 12: Maximum Forward Biased Safe Operating Area for AOTF22N50L (Note F) Rev.2.0: October 2014 www.aosmd.com 0 25 50 75 100 125 150 TCASE (°C) Figure 11: Current De-rating (Note B) Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PPDDM 0.01 TTonon Single Pulse 0.001 0.000001 0.00001 TT 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOT22N50 (Note F) 1 10 ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PPDDM 0.01 TTonon Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 TT 1 10 100 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF22N50 (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PPDDM 0.01 TTonon Single Pulse 0.001 1E-05 0.01 0.1 1 10 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF22N50L (Note F) Rev.2.0: October 2014 0.0001 0.001 TT www.aosmd.com 100 Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.2.0: October 2014 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 6 of 6