AOK22N50 500V,22A N-Channel MOSFET General Description The AOK22N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on) , C issand C rss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. Features VDS ID (at VGS=10V) 600V@150℃ 22A RDS(ON) (at VGS=10V) < 0.26Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage Continuous Drain Current 1/5 TC=25°C TC=100°C ID AOK22N50 500 Units V ±30 V 22 15 A Pulsed Drain Current C IDM Avalanche Current C IAR 7 A Repetitive avalanche energy C EAR 735 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case EAS dv/dt 1470 5 417 mJ V/ns W 3.3 -55 to 150 W/ oC °C 300 °C AOK22N50 40 0.5 0.3 Units °C/W °C/W °C/W PD TJ, TSTG TL Symbol RθJA RθCS RθJC 88 www.freescale.net.cn AOK22N50 500V,22A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 600 V ID=250µA, VGS=0V 0.57 V/ oC VDS=500V, VGS=0V 1 VDS=400V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=11A gFS Forward Transconductance VDS=40V, ID=11A 25 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS ISM 4 4.5 nΑ V 0.21 0.26 Ω S 1 V Maximum Body-Diode Continuous Current 22 A Maximum Body-Diode Pulsed Current 88 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss ±100 3.4 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 2465 3086 3710 pF VGS=0V, VDS=25V, f=1MHz 200 290 380 pF 14 24 35 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω 55 69 83 nC 17 22 27 nC 12 24 36 nC SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=400V, ID=22A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=22A,dI/dt=100A/µs,VDS=100V 415 524 630 Qrr Body Diode Reverse Recovery Charge IF=22A,dI/dt=100A/µs,VDS=100V 7.5 9.6 12 Body Diode Reverse Recovery Time VGS=10V, VDS=250V, ID=22A, RG=25Ω 60 ns 122 ns 124 ns 77 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=7A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. AOK22N50 500V,22A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 40 VDS=40V 10V 30 6.5V 20 -55°C ID(A) ID (A) 10 6V 125°C 1 10 VGS=5.5V 25°C 0 0.1 0 5 10 15 20 25 30 0 2 4 6 8 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 0.4 Normalized On-Resistance 3 0.3 RDS(ON) (Ω Ω) 10 VGS=10V 0.2 0.1 VGS=10V ID=11A 2.5 2 1.5 1 0.5 0 0.0 0 5 10 15 20 -100 25 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 1.0E+02 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 1.0E-02 25°C 0.9 1.0E-03 0.8 1.0E-04 -100 -50 0 50 100 150 200 TJ (° °C) Figure 5:Break Down vs. Junction Temparature 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 1.0 AOK22N50 500V,22A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 Ciss VDS=400V ID=22A Capacitance (pF) VGS (Volts) 12 9 6 1000 Coss Crss 100 3 0 10 0 20 40 60 80 Qg (nC) Figure 7: Gate-Charge Characteristics 100 0.1 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 25 10µs RDS(ON) limited 20 100µs 10 ID (Amps) Current rating ID(A) 100 15 10 1ms 10ms 1 DC 0.1 5 TJ(Max)=150°C TC=25°C 0 0.01 0 25 50 75 100 125 150 TCASE (° °C) Figure 9: Current De-rating (Note B) 1 10 100 1000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOK22N50 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PPDD 0.01 TTonon Single Pulse TT 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOK22N50 (Note F) 1 10 AOK22N50 500V,22A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds