Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT25N08
Power MOSFET
25A, 80V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC UTT25N08 is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide the
customers with a minimum on-state resistance and superior
switching performance. It also can withstand high energy pulse in
the avalanche and commutation mode.
The UTC UTT25N08 is universally applied in low voltage, such as
automotive, high efficiency switching for DC/DC converters, and DC
motor control.
„
FEATURES
* RDS(ON) <0.12Ω @VGS = 10 V
* Typically 32pF low CRSS
* High switching speed
* Typically 19nC low gate charge
„
„
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT25N08L-TN3-R
UTT25N08G-TN3-R
UTT25N08L-TN3-T
UTT25N08G-TN3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
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UTT25N08
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
RATINGS
UNIT
VDSS
80
V
VGSS
±25
V
25
A
Continuous
ID
Drain Current
Pulsed
IDM
100
A
Power Dissipation
PD
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
100
2.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=80V, VGS=0V
Forward
VGS=+25V, VDS=0V
Gate- Source Leakage Current
IGSS
Reverse
VGS=-25V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=25A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=80V, ID=25A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=50V, ID=25A, RL=50Ω,
VGS=10V, RG=25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=25A, VGS=0V
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
80
1
+100
-100
V
µA
nA
nA
4.0
120
V
mΩ
600 780
165 215
32
40
pF
pF
pF
19
3.9
9.0
7.5
150
20
65
25
310
50
140
nC
nC
nC
ns
ns
ns
ns
25
100
1.5
A
A
V
2.0
25
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UTT25N08
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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