UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25N08 Power MOSFET 25A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25N08 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC UTT25N08 is universally applied in low voltage, such as automotive, high efficiency switching for DC/DC converters, and DC motor control. FEATURES * RDS(ON) <0.12Ω @VGS = 10 V * Typically 32pF low CRSS * High switching speed * Typically 19nC low gate charge SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT25N08L-TN3-R UTT25N08G-TN3-R UTT25N08L-TN3-T UTT25N08G-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube 1 of 3 QW-502-749.a UTT25N08 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 80 V VGSS ±25 V 25 A Continuous ID Drain Current Pulsed IDM 100 A Power Dissipation PD 50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 100 2.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ = 25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=80V, VGS=0V Forward VGS=+25V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-25V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=25A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=80V, ID=25A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=50V, ID=25A, RL=50Ω, VGS=10V, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=25A, VGS=0V Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 80 1 +100 -100 V µA nA nA 4.0 120 V mΩ 600 780 165 215 32 40 pF pF pF 19 3.9 9.0 7.5 150 20 65 25 310 50 140 nC nC nC ns ns ns ns 25 100 1.5 A A V 2.0 25 2 of 3 QW-R502-749.a UTT25N08 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-749.a