UNISONIC TECHNOLOGIES CO., LTD 19N10V Power MOSFET 100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. FEATURES * RDS(ON) = 0.1Ω @VGS = 10 V * Ultra low gate charge ( typical 19nC ) * Low reverse transfer Capacitance ( CRSS = typical 32pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 19N10VL-TM3-T 19N10VG-TM3-T 19N10VL-TN3-R 19N10VG-TN3-R www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel 1 of 6 QW-R502-914, A 19N10V Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ± 25 V Continuous Drain Current ID 15.6 A Pulsed Drain Current (Note 2) IDM 62.4 A Avalanche Current (Note 2) IAR 15.6 A Single Pulsed Avalanche Energy (Note 3) EAS 220 mJ Repetitive Avalanche Energy (Note 2) EAR 5.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 6.0 V/ns PD 50 W Power Dissipation Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L=1.35mH, IAS=15.6A, VDD=25V, RG=25 Ω, Starting TJ=25°C 4. ISD≤19A, di/dt ≤ 300A/µs, VDD≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 50 2.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SYMBOL TEST CONDITIONS VGS=0V, ID=250µA I =250µA, ∆BVDSS/∆TJ D Referenced to 25°C VDS=100V, VGS=0V IDSS VGS=25V, VDS=0V IGSS VGS=-25V, VDS=0V BVDSS VGS(TH) RDS(ON) gFS CISS COSS CRSS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VDS=VGS, ID=250µA VGS=10V, ID=7.8A VDS=40V, ID=7.8A (Note 1) VDS=25V, VGS=0V, f=1.0MHz MIN TYP MAX UNIT 100 V V/°C 0.1 1 100 -100 µA 0.078 3.0 0.1 11 V Ω S 600 165 32 780 215 40 pF pF pF 1.0 nA 2 of 6 QW-R502-914, A 19N10V Power MOSFET ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS SWITCHING PARAMETERS Total Gate Charge QG VDS=80V, ID=19A, VGS=10V Gate Source Charge QGS (Note 1, 2) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=50V, ID=19A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD VGS=0V, IS=15.6A Maximum Body-Diode Continuous Current IS Maximum Pulsed Drain-Source Diode ISM Forward Current Body Diode Reverse Recovery Time tRR VGS= 0V, IS=19A, dI Body Diode Reverse Recovery Charge QRR F/dt=100A/μs (Note 1) Note: 1. Pulse Test : Pulse width ≤300µs, Duty cycle≤ 2% Note: 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 19 3.9 9.0 7.5 150 20 65 78 200 MAX UNIT 25 nC 25 310 50 140 ns ns ns ns 1.5 15.6 V A 62.4 A ns nC 3 of 6 QW-R502-914, A 19N10V Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-914, A 19N10V Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% tD(ON) Pulse Width≤ 1μs tD(OFF) tF tR Duty Factor≤0.1% Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms QG 10V QGS QGD VGS Charge Fig. 3A Gate Charge Test Circuit VDS L R VDD D 10V Fig. 3B Gate Charge Waveform D.U.T. tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Fig. 4B Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-914, A 19N10V Power MOSFET TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-914, A