UNISONIC TECHNOLOGIES CO., LTD UTT50N06 Power MOSFET 50A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50N06 is an N-channel power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT50N06 is generally applied in low power switching mode power appliances and electronic ballast. FEATURES * RDS(ON) < 20mΩ @ VGS=10V, ID = 50A * High Switching Speed * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UTT50N06L-TA3-T UTT50N06G-TA3-T TO-220 UTT50N06L-TF3-T UTT50N06G-TF3-T TO-220F UTT50N06L-TN3-R UTT50N06G-TN3-R TO-252 UTT50N06L-K08-5060-R UTT50N06G-K08-5060-R DFN-8(5×6) Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 G G G S 2 D D D S Pin Assignment 3 4 5 6 S - - S - - S - - S G D D 7 D Packing 8 Tube Tube - Tape Reel D Tape Reel 1 of 9 QW-R502-704.F UTT50N06 Power MOSFET MARKING TO-220 / TO-220F / TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw DFN-8(5×6) 2 of 9 QW-R502-704.F UTT50N06 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V TC = 25°C 50 A Continuous Drain Current ID TC = 100°C 35 A Pulsed Drain Current (Note 2) IDM 200 A Single Pulsed (Note 3) EAS 120 mJ Avalanche Energy 13 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt dv/dt 3.5 V/ns TO-220 100 W TO-220F 65 W Power Dissipation (TC=25°C) PD TO-252 46 W DFN-8(5×6) 20.8 W Junction Temperature TJ +150 °C Operation and Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by TJ 3. L=0.1mH, IAS=50A, VDD=25V, RG=20Ω, Starting TJ=25°C 4. ISD ≤ 30A, VDS=0V, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATING TO-220/TO-220F 62 Junction to Ambient θJA TO-252 100 DFN-8(5×6) 65 TO-220 1.24 TO-220F 1.92 Junction to Case θJC TO-252 2.7 DFN-8(5×6) 6 (Note) Note: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT °C/W °C/W °C/W °C/W °C/W °C/W °C/W 3 of 9 QW-R502-704.F UTT50N06 Power MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 μA 60 V Drain-Source Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 μA Forward VGS = 20V, VDS = 0 V 100 nA Gate-Source Leakage Current IGSS -100 nA Reverse VGS = -20V, VDS = 0 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C 0.07 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 1.0 3.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 50A 13 20 mΩ DYNAMIC CHARACTERISTICS Input Capacitance CISS 2000 pF VGS = 0 V, VDS = 25 V Output Capacitance COSS 550 pF f = 1MHz 150 pF Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG 75 nC VDS=50V, VGS=10V, ID=1.3A Gate-Source Charge QGS 96 nC IG= 100μA (Note1, 2) 10 nC Gate-Drain Charge QGD Turn-On Delay Time tD(ON) 40 ns Turn-On Rise Time tR 100 ns VDS=30V, VGS=10V, ID=0.5A, RG=25Ω (Note1, 2) Turn-Off Delay Time tD(OFF) 90 ns Turn-Off Fall Time tF 80 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode IS 50 A Forward Current Maximum Pulsed Drain-Source Diode ISM 200 A Forward Current Drain-Source Diode Forward Voltage VSD IS = 50A, VGS = 0 V 1.5 V Body Diode Reverse Recovery Time trr 70 ns IS=30A, VGS=0V, dIS/dt=100A/µs Body Diode Reverse Recovery Charge Qrr 90 nC Notes: 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 9 QW-R502-704.F UTT50N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 9 QW-R502-704.F UTT50N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) RL VDS VDD VGS RG D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RG VDD ID(t) VDS(t) VDD 10V D.U.T. tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tp Time Unclamped Inductive Switching Waveforms 6 of 9 QW-R502-704.F UTT50N06 Drain Current, ID (A) Drain Current, ID (A) TYPICAL CHARACTERISTICS On State Current vs. Allowable Case Temperature On-Resistance Variation vs. Drain Current and Gate Voltage 70 60 50 40 30 20 VGS=10V VGS=20V 10 0 0 20 30 40 50 60 70 80 90 100 120 140160 Drain Current, ID (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Reverse Drain Current, ISD (A) Drain to Source On-Resistance,RDS(ON) (mΩ) Power MOSFET 102 150°C 101 25°C *Note: 1. VGS=0V 2. 250µs Test 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Source-Drain Voltage, VSD (V) 7 of 9 QW-R502-704.F UTT50N06 1.1 1.0 0.9 *Note: 1. VGS=0V 2. ID=250µA 3.0 On-Resistance Variation vs. Junction Temperature 2.5 2.0 1.5 1.0 0.5 0.0 *Note: 1. VGS=10V 2. ID=25A -50 0 50 100 150 Junction Temperature, TJ (°C) Drain Current, ID (A) 0.8 150 200 -100 -50 0 50 100 Junction Temperature, TJ (°C) Drain-Source On-Resistance, RDS(ON), (Normalized) 1.2 Breakdown Voltage Variation vs. Junction Temperature Drain Current , ID,(A) Drain-Source Breakdown Voltage, BVDSS(Normalized) TYPICAL CHARACTERISTICS Thermal Response, ZθJC (t) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 9 QW-R502-704.F UTT50N06 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 9 of 9 QW-R502-704.F