Datasheet

UNISONIC TECHNOLOGIES CO., LTD
12N70K-MT
Power MOSFET
12A, 700V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 12N70K-MT are N-Channel enhancement mode
power MOSFET which are produced using UTC’s proprietary,
planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode power
supply. To minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode the advanced technology has been
especially tailored.

FEATURES
* RDS(ON) < 0.83Ω @ VGS = 10V, ID = 6.0A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N70KL-TA3-T
12N70KG-TA3-T
12N70KL-TF1-T
12N70KG-TF1-T
12N70KL-TF3-T
12N70KG-TF3-T
12N70KL-TF3-T
12N70KG-TF3-T
12N70KL-TM3-R
12N70KG-TM3-R
12N70KL-TN3-R
12N70KG-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
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12N70K-MT

Power MOSFET
MARKING
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
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
12
A
Drain Current
Pulsed (Note 2)
IDM
48
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
220
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.55
V/ns
TO-220
225
W
TO-220F/ TO-220F1
52
W
Power Dissipation
PD
TO-220F2
55
W
TO-251/TO-252
50
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=3mH, IAS=12A, VDD= 50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤12A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-251/TO-252
TO-220
TO-220F/ TO-220F1
Junction to Case
TO-220F2
TO-251/TO-252
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SYMBOL
θJA
θJC
RATINGS
UNIT
62.5
°С/W
110
0.56
2.4
2.27
2.5
°С/W
°С/W
°С/W
°С/W
°С/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 μA
700
V
Drain-Source Leakage Current
IDSS
VDS = 700 V, VGS = 0 V
10
μA
Gate-Source Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
±100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA,Referenced to 25°C
0.7
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 6.0A
0.70 0.83 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1600 1900 pF
VDS = 25 V, VGS = 0 V,
Output Capacitance
COSS
160 270 pF
f = 1MHz
9
18
pF
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
44
60
nC
VDS=50V, VGS=1.0V,
Gate-Source Charge
QGS
10
nC
ID=1.3A (Note 1, 2)
17
nC
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
96 120 ns
VDD =30V, ID =0.5A,
Turn-On Rise Time
tR
122 135 ns
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
184 200 ns
Turn-Off Fall Time
tF
102 135 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS
12
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
48
A
Forward Current
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 12A
1.4
V
Reverse Recovery Time
trr
IS=12A, VGS=0V
534
ns
di/dt=200A/μs (Note 1)
Reverse Recovery Charge
QRR
5.7
μC
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
VGS
D.U.T.
10V
10%
tD(ON)
Pulse Width≤1μs
Duty Factor≤0.1%
Switching Test Circuit
12V
tF
Switching Waveforms
Same Type
as D.U.T.
50kΩ
0.2μF
tD(OFF)
tR
QG
10V
0.3μF
QGS
VDS
QGD
VGS
DUT
3mA
VGS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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Drain Current, ID (µA)
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)

Power MOSFET
Drain-Source On-State Resistance
Characteristics
6
14
12
Drain Current, ID (A)
5
Drain Current, ID (A)
Drain Current vs. Source to Drain Voltage
4
3
2
1
10
8
6
4
2
0
0
0
1
2
3
4
5
6
Drain to Source Voltage, VDS (V)
0
0.4
0.6
0.8 1.0 1.2
0.2
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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