Datasheet

UNISONIC TECHNOLOGIES CO., LTD
5N65-CB
Power MOSFET
5.0A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION

The UTC 5N65-CB is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications at power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES

* RDS(ON) < 2.3Ω @VGS = 10 V, ID = 2.5 A
* Fast Switching Capability
* Improved dv/dt Capability, High Ruggedness

SYMBOL

ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
5N65L-TA3-T
5N65G-TA3-T
5N65L-TF3-T
5N65G-TF3-T
5N65L-TF1-T
5N65G-TF1-T
5N65L-TF2-T
5N65G-TF2-T
5N65L-TM3-R
5N65G-TM3-R
5N65L-TN3-R
5N65G-TN3-R
Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
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5N65-CB
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Power MOSFET
MARKING
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
5
A
Continuous Drain Current
ID
5
A
Pulsed Drain Current (Note 2)
IDM
20
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
70
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3.3
V/ns
TO-220
100
W
TO-220F/TO-220F1
Power Dissipation
PD
36
W
TO-220F2
TO-251/TO-252
54
W
Junction Temperature
TJ
+150
°C
Operation Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L=16.8mH, IAS=2.9A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤5A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-251/TO-252
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-251/TO-252
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATINGS
UNIT
62.5
°C/W
160
1.25
°C/W
°C/W
3.47
°C/W
2.3
°C/W
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
VGS =0V, ID = 250μA
VDS =650V, VGS = 0V
Forward
VGS =30V, VDS = 0V
Gate-Source Leakage Current
IGSS
Reverse
VGS =-30V, VDS = 0V
ID =250μA, Referenced to
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ
25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS =10V, ID = 2.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
Output Capacitance
COSS
f = 1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, ID=1.3A, VGS=10V,
Gate-Source Charge
QGS
IG=100μA (Note 1, 2)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD=30V, ID =0.5A, RG =25Ω
(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 5A
Reverse Recovery Time
trr
VGS = 0 V, IS = 5 A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Qrr
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
650
1
100
-100
0.6
2.0
V
μA
nA
V/°C
4.0
2.3
V
Ω
265
60
60
pF
pF
pF
53
4.2
5.2
42
24
152
30
nC
nC
nC
ns
ns
ns
ns
370
1.64
5
A
20
A
1.4
V
ns
μC
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TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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Power MOSFET
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TEST CIRCUITS AND WAVEFORMS (Cont.)

Switching Test Circuit
Switching Waveforms
VGS
12V
Same Type
as D.U.T.
50kΩ
0.2μF
QG
10V
0.3μF
VDS
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Unclamped Inductive Switching Test Circuit
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Gate Charge Waveform
Unclamped Inductive Switching Waveforms
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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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