Analog Power AM6612N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 22 @ VGS = 10V 30 30 @ VGS = 4.5V Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SO-8 Surface Mount Package Saves Board Space High power and current handling capability ID (A) 9.4 7.0 1 8 2 7 3 6 4 5 o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage ±20 VGS o TA=25 C a Continuous Drain Current o TA=70 C b Pulsed Drain Current a Continuous Source Current (Diode Conduction) 9.4 ID IDM ±30 IS 1.6 o TA=25 C a Power Dissipation o TA=70 C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Case a Maximum Junction-to-Ambient Symbol t <= 5 sec t <= 5 sec RθJC RθJA A 7.4 A 3.1 PD W 2 TJ, Tstg -55 to 150 o Maximum 25 Units 50 C o o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 January, 2004 - Rev. A PRELIMINARY Publication Order Number: DS-AM6612_E Analog Power AM6612N SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = 250 uA Limits Unit Min Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A IDSS A A Forward Tranconductance Diode Forward Voltage ±100 nA VDS = 24 V, VGS = 0 V 1 25 uA o VDS = 24 V, VGS = 0 V, TJ = 55 C ID(on) Drain-Source On-Resistance 1 VDS = 0 V, VGS = ±20 V VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 9.2 A VGS = 4.5 V, ID = 7 A rDS(on) gfs VSD 20 A 22 30 VDS = 15 V, ID = 9.2 A IS = 2.3 A, VGS = 0 V mΩ 40 0.7 S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr VDS = 10 V, VGS = 4.5 V, ID = 7 A VDD = 10 V, RL = 6 Ω , ID = 1 A, VGEN = 10 V IF = 2.3 A, Di/Dt = 100A/uS 4.0 1.7 1.4 16 5 23 3 41 nC nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 January, 2004 - Rev. A PRELIMINARY Publication Order Number: DS-AM6612_E Analog Power AM6612N Typical Electrical Characteristics (N-Channel) 30 TA = -55oC VDS = 5V VGS = 10V 25 6.0V 20 5.0V 4.0V 15 3.0V 10 5 25oC 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 125oC 20 15 10 5 0 0 0 0.5 1 1.5 2 0.5 2.5 1.5 2.5 3.5 4.5 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Body Diode Forward Voltage Variation with Source Current and Temperature 1500 2 CAPACITANCE (pF) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5 4.5V 1.5 6.0V 1 10V 0.5 0 5 10 15 20 25 f = 1MHz VGS = 0 V 1200 CISS 900 600 COSS 300 CRSS 0 30 0 ID, DRAIN CURRENT (A) 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 3. On Resistance Vs Vgs Voltage Figure 4. Capacitance Characteristics 10 1.6 8 Normalized RDS(on) Vgs Gat e-Source Volt age ( V ) 5 6 4 2 0 VGS = 10V I D = 7A 1.4 1.2 1.0 0 .8 0 .6 0 2 4 6 8 -50 10 0 25 50 75 10 0 12 5 150 TJ Juncation Temperature (C) Qg, Charge (nC) Figure 5. Gate Charge Characteristics Figure 6. On-Resistance Variation with Temperature 3 January, 2004 - Rev. A PRELIMINARY -2 5 Publication Order Number: DS-AM6612_E Analog Power AM6612N Typical Electrical Characteristics (N-Channel) RDS(ON), ON-RESISTANCE (OHM) IS, REVERSE DRAIN CURRENT (A) 100 VGS = 0V 10 o 1 TA = 125 C o 25 C 0.1 0.01 0.001 0.0001 0.1 ID = 7 A 0.08 0.06 0.04 o TA = 25 C 0.02 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 2 Figure 7. Transfer Characteristics 6 50 VDS = VGS ID = -250mA 2 1.8 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 8 10 Figure 8. On-Resistance with Gate to Source Voltage 2.2 P(pk), PEAK TRANSIENT POWER (W) -Vth, GATE-SOURCE THRESTHOLD VOLTAGE (V) 4 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) 150 175 SINGLE PULSE RqJA = 125oC/W TA = 25oC 40 30 20 10 0 0.001 0.01 TA, AMBIENT TEMPERATURE (oC) Figure 9. Vth Gate to Source Voltage Vs Temperature 0.1 1 t1, TIME (SEC) 10 100 Figure 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient 1 D = 0.5 R qJ A(t) = r(t) + R qJ A R qJ A = 125 癈/W 0.2 0.1 0.1 0.0 P (pk) 0.02 t1 t2 TJ - TA = P * R qJ A(t) Duty C yc le , D = t1 / t2 0.01 0.01 S INGLE P ULS E 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIM E (s e c ) Figure 11. Transient Thermal Response Curve 4 January, 2004 - Rev. A PRELIMINARY Publication Order Number: DS-AM6612_E Analog Power AM6612N Package Information SO-8: 8LEAD H x 45° 5 January, 2004 - Rev. A PRELIMINARY Publication Order Number: DS-AM6612_E