FAST SWITCHING DIODES 1N4148 FEATURES Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including: the SOD-123 case with the type designation 1N4448W, the MiniMELF case with the type designation LL4448, and the SOT23 case with the type designation MECHANICAL DATA Case: DO-35 Weight: apprax: 0.13gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage V RM 100 V Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz I0 1501) mA Surge Forward Current at t < 1 s and Tj = 25 °C IFSM 500 mA Power Dissipation at Tamb = 25 °C Ptot 5001) mW Junction Temperature Tj 175 °C Storage Temperature Range TS –65 to +175 °C 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35) Web Site: www.hkmic.com FAST SWITCHING DIODES ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit VF – – 1 V IR IR IR – – – – – – 25 5 50 nA µA µA Capacitance at VF = VR = 0 V Ctot – – 4 pF Voltage Rise when Switching ON tested with 50 mA Pulses tp = 0.1 µs, Rise Time < 30 ns, fp = 5 to 100 kHz Vfr – – 2.5 V Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω trr – – 4 ns Thermal Resistance Junction to Ambient Air RthJA – – 3501) K/W Rectification Efficiency at f = 100 MHz, VRF = 2 V ηv 0.45 – – – Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 °C 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35) Rectification Efficiency Measurement Circuit Web Site: www.hkmic.com FAST SWITCHING DIODES RATINGS AND CHARACTERISTIC CURVES 1N4148 Web Site: www.hkmic.com FAST SWITCHING DIODES RATINGS AND CHARACTERISTIC CURVES 1N4148 Web Site: www.hkmic.com