GOOD-ARK LL4448

LL4448
SILICON EPITAXIAL PLANAR DIODE
Features
Silicon Epitaxial Planar Diode
fast switching diode in MiniMELF case especially suited for
automatic insertion.
Identical electrically to standard 1N4448
These diode are delivered taped.
Details see “Taping”.
Weight approx. : 0.05g
DIMENSIONS
DIM
Absolute Maximum Ratings
(Ta=25
inches
mm
Min.
Max.
A
0.134
0.142
3.4
3.6
B
0.055
0.059
1.40
1.50
C
0.008
0.016
0.2
0.4
)
Symbols
Values
Units
Reverse voltage
VR
75
Volts
Peak reverse voltage
VRM
100
Volts
Rectified current (Average)
Half wave rectification with Resist. Load
at Tamb=25 and f 50Hz
IO
Surge forward current at t<1s and Tj=25
IFSM
Power dissipation at Tamb=25
Ptot
Junction Temperature
Tj
175
Storage temperature range
TS
-65 to +175
Note:
(1) Valid provided that electrodes are kept at ambient temperature
1
150
1)
500
500
1)
mA
mA
mW
Min.
Max.
Note
Characteristics
at Tj=25
Symbols
Min.
Typ.
Max.
Units
Forward voltage
at IF=5mA
at IF=100mA
VF
VF
0.62
-
-
0.72
1
Volt
Volt
Leakage current
at VR=20V
at VR=75V
at VR=20V, Tj=150
IR
IR
IR
-
-
25
5
50
nA
uA
uA
V(BR)R
100
-
-
Volts
Ctot
-
-
4
F
trr
-
-
4
nS
RthA
-
-
0.35
0.45
-
Reverse breakdown voltage
tested with 100uA pulses
Capacitance
at VF=VR=0
Reverse recovery time
from IF=10mA to IR=1mA, VR=6V, RL=100
Thermal resistance
junction to ambient Air
Rectification efficiency
at f=100MHz, VRF=2V
V
Note:
(1) Valid provided that electrodes are kept at ambient temperature
Rectification efficiency measurement circuit
2
-
1)
K/mW
-
RATINGS AND CHARACTERISTIC CURVES
3
RATINGS AND CHARACTERISTIC CURVES
4