FAST SWITCHING DIODES 1N4448 FEATURES Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including: the SOD-123 case with the type designation 1N4448W, the MiniMELF case with the type designation LL4448, and the SOT23 case with the type designation MECHANICAL DATA Case: DO-35 Weight: apprax: 0.13gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage V RM 100 V Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz I0 1501) mA Surge Forward Current at t < 1 s and Tj = 25 °C IFSM 500 mA Power Dissipation at Tamb = 25 °C Ptot 5001) mW Junction Temperature Tj 175 °C Storage Temperature Range TS –65 to +175 °C 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. MIC INVESTMENTS (CHINA) COMPANY LIMITED ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit Forward Voltage at IF = 5 mA at IF = 10 mA VF VF 0.62 – – – 0.72 1 V V Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 °C IR IR IR – – – – – – 25 5 50 nA µA µA Reverse Breakdown Voltage tested with 100 µA Pulses V(BR)R 100 – – V Capacitance at VF = VR = 0 V Ctot – – 4 pF Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω trr – – 4 ns Thermal Resistance Junction to Ambient Air RthJA – – 3501) K/W Recification Efficiency at f = 100 MHz, VRF = 2 V ηv 0.45 – – – 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Rectification Efficiency Measurement Circuit RATINGS AND CHARACTERISTIC CURVES 1N4448 RATINGS AND CHARACTERISTIC CURVES 1N4448