UNISONIC TECHNOLOGIES CO., LTD Preliminary UT4610-H Power MOSFET 73A,100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT4610-H is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC UT4610-H is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. FEATURES * RDS(ON)<14mΩ @ VGS=10V, ID=44A * High switching speed SYMBOL D (2) G (1) S (3) ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT4610L-TA3-T UT4610G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 1 G Pin Assignment 2 3 D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R209-035.a UT4610-H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL VDSS VGSS RATINGS UNIT 100 V ±20 V 73 TC=25°C Continuous A ID (VGS @ 10V) Drain Current TC=100°C 52 Pulsed (Note 4) IDM 290 A Single Pulsed Avalanche Energy (Note 2) EAS 235 mJ Power Dissipation TC=25°C PD 190 W Linear Derating Factor 1.3 W/°C Peak Diode Recovery (Note 3) dV/dt 7.6 V/ns Junction Temperature TJ -55~+175 °C Storage Temperature Range TSTG -55~+175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Limited by TJmax, starting TJ=25°C, L=0.39mH, RG=25Ω, IAS=44A, VGS=10V. Part not recommended for use above this value. 3. ISD≤44A, di/dt≤660A/µs, VDD≤V(BR)DSS, TJ≤175°C 4. Pulse width ≤400µs; duty cycle ≤ 2% Drain-Source Voltage Gate-Source Voltage THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case Note: Rθ is measured at TJ approximately 90°C SYMBOL θJA θJC RATINGS 62 0.77 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise spcified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient SYMBOL BVDSS TEST CONDITIONS ID=250µA, VGS=0V Reference to 25°C, ID=1mA △BVDSS/△TJ (Note 1) VDS=100V, VGS=0V Drain-Source Leakage Current IDSS VDS=100V, VGS=0V, TJ=125°C Forward VGS=+20V Gate-Source Leakage Current IGSS Reverse VGS=-20V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=100µA Static Drain-Source On-State RDS(ON) VGS=10V, ID=44A (Note 2) Resistance Forward Transconductance gFS VDS=50V, ID=44A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=50V, f=1MHz Reverse Transfer Capacitance CRSS UNISONIC TECHNOLOGIES CO., LTD MIN TYP MAX UNIT 100 V 0.085 2.0 11 73 V/°C 20 250 200 -200 µA µA nA nA 4.0 V 14 mΩ S 3200 368 220 pF pF pF 2 of 7 www.unisonic.com.tw QW-R209-035.a UT4610-H Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise spcified) PARAMETER SYMBOL TEST CONDITIONS SWITCHING PARAMETERS Total Gate Charge QG Gate to Source Charge QGS VGS=10V, VDS=50V, ID=1.3A Gate to Drain Charge QGD Gate Resistance RG f=1MHz open drain Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=0.5A, VGS=10V, RG=25Ω (Note 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS MOSFET symbol showing the Maximum Body-Diode Continuous IS integral reverse Current p-n junction diode. MIN TYP MAX UNIT 730 126 288 1.1 110 160 560 200 nC nC nC Ω ns ns ns ns 73 A 290 A 1.3 V D Maximum Body-Diode Pulsed Current (Note 1) ISM G S Drain-Source Diode Forward Voltage VSD IS=44A, VGS=0V, TJ=25°C (Note 2) Notes: 1. Repetitive rating; pulse width limited by max. junction temperature 2. Pulse width ≤400µs; duty cycle ≤ 2% UNISONIC TECHNOLOGIES CO., LTD 3 of 7 www.unisonic.com.tw QW-R209-035.a UT4610-H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS RG 90% RD VGS VDS 10V 10% DUT VGS td(ON) tON Resistive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD tR td(OFF) tF tOFF Resistive Switching Waveforms 4 of 7 www.unisonic.com.tw QW-R209-035.a UT4610-H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD 5 of 7 www.unisonic.com.tw QW-R209-035.a UT4610-H Preliminary UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 6 of 7 www.unisonic.com.tw QW-R209-035.a UT4610-H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 7 of 7 www.unisonic.com.tw QW-R209-035.a