UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 15Ω @ VGS=10V, ID=0.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1N60G-AA3-R 1N60G-AB3-R 1N60L-TM3-T 1N60G-TM3-T 1N60L-TN3-R 1N60G-TN3-R 1N60L-T60-K 1N60G-T60-K 1N60L-T92-B 1N60G-T92-B 1N60L-T92-K 1N60G-T92-K Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package SOT-223 SOT-89 TO-251 TO-252 TO-126 TO-92 TO-92 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tape Reel Tape Reel Tube Tape Reel Bulk Tape Box Bulk 1 of 7 QW-R205-054.E 1N60-KW Power MOSFET MARKING PACKAGE MARKING SOT-223 SOT-89 TO-251 / TO-252 TO-126 TO-92 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-054.E 1N60-KW ■ Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 1 A Avalanche Energy Single Pulsed (Note 2) EAS 23 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns SOT-89 0.69 W SOT-223 0.8 W Power Dissipation TO-251/TO-252 PD 1.1 W (TA=25°С) TO-126 12.5 W TO-92 0.6 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L = 46mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SOT-89 SOT-223 Junction to Ambient TO-251/TO-252 TO-126 TO-92 SOT-89 SOT-223 Junction to Case TO-251/TO-252 TO-126 TO-92 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 180 150 110 132 180 38 14 4.53 10 88 UNIT °С/W °С/W °С/W °С/W °С/W °С/W °С/W °С/W °С/W °С/W 3 of 7 QW-R205-054.E 1N60-KW Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL MIN TYP MAX UNIT VGS=0V, ID=250μA 600 VDS=600V, VGS=0V Forward VGS=30V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, ID=1.3A, RG=3.3kΩ Gate-Source Charge QGS VGS=10V (Note 2,3) Gate-Drain Charge QGD Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD=30V, ID=1A, RG=25Ω, VGS=10V (Note 2,3) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS =1.0A, VGS=0V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 3. Essentially Independent of Operating Temperature. V 10 μA 100 nA -100 nA V/°С BVDSS IDSS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS 0.4 12 4.0 15 V Ω 150 17.5 4.6 pF pF pF 8 1.8 1.3 15 30 26 35 nC nC nC ns ns ns ns 1.0 A 4.0 A 1.4 V 4 of 7 QW-R205-054.E 1N60-KW Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-054.E 1N60-KW Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-054.E 1N60-KW Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. 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