Datasheet

UNISONIC TECHNOLOGIES CO., LTD
1N60-KW
Power MOSFET
1.0A, 600V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 1N60-KW is a high voltage MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and
bridge circuits.

FEATURES
* RDS(ON) < 15Ω @ VGS=10V, ID=0.5A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
1N60G-AA3-R
1N60G-AB3-R
1N60L-TM3-T
1N60G-TM3-T
1N60L-TN3-R
1N60G-TN3-R
1N60L-T60-K
1N60G-T60-K
1N60L-T92-B
1N60G-T92-B
1N60L-T92-K
1N60G-T92-K
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
SOT-223
SOT-89
TO-251
TO-252
TO-126
TO-92
TO-92
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tape Reel
Tube
Tape Reel
Bulk
Tape Box
Bulk
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QW-R205-054.E
1N60-KW

Power MOSFET
MARKING
PACKAGE
MARKING
SOT-223
SOT-89
TO-251 / TO-252
TO-126
TO-92
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1N60-KW
■
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
1
A
Avalanche Energy
Single Pulsed (Note 2)
EAS
23
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
SOT-89
0.69
W
SOT-223
0.8
W
Power Dissipation
TO-251/TO-252
PD
1.1
W
(TA=25°С)
TO-126
12.5
W
TO-92
0.6
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L = 46mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
SOT-89
SOT-223
Junction to Ambient
TO-251/TO-252
TO-126
TO-92
SOT-89
SOT-223
Junction to Case
TO-251/TO-252
TO-126
TO-92
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
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θJA
θJC
RATINGS
180
150
110
132
180
38
14
4.53
10
88
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
MIN
TYP MAX UNIT
VGS=0V, ID=250μA
600
VDS=600V, VGS=0V
Forward
VGS=30V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
2.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=0.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, ID=1.3A, RG=3.3kΩ
Gate-Source Charge
QGS
VGS=10V (Note 2,3)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD=30V, ID=1A, RG=25Ω,
VGS=10V (Note 2,3)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
IS =1.0A, VGS=0V
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
3. Essentially Independent of Operating Temperature.
V
10
μA
100
nA
-100 nA
V/°С
BVDSS
IDSS
UNISONIC TECHNOLOGIES CO., LTD
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TEST CONDITIONS
0.4
12
4.0
15
V
Ω
150
17.5
4.6
pF
pF
pF
8
1.8
1.3
15
30
26
35
nC
nC
nC
ns
ns
ns
ns
1.0
A
4.0
A
1.4
V
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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1N60-KW

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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