1N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products N-Channel Power MOSFET (1.2A, 600Volts) DESCRIPTION The Nell 1N60 is a three-terminal silicon device with current conduction capability of 1.2A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. D D G S G D S TO-251 (I-PAK) (1N60F) FEATURES TO-252 (D-PAK) (1N60G) D RDS(ON) = 11.5Ω@VGS = 10V Ultra low gate charge(6nC max.) Low reverse transfer capacitance (C RSS = 3pF typical) G D Fast switching capability 100% avalanche energy specified GD S TO-220AB (1 N60A ) Improved dv/dt capability 150°C operation temperature S TO-220F (1N60AF) D (Drain) PRODUCT SUMMARY G ID (A) 1.2 VDSS (V) 600 RDS(ON) (Ω) 1.15 @ V GS = 10V QG(nC) max. 6 www.nellsemi.com Page 1 of 8 D S TO-92 (1 N60E ) G (Gate) S (Source) 1N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER VALUE VDSS Drain to Source voltage T J =25°C to 150°C 600 V DGR Drain to Gate voltage R GS =20KΩ 600 V GS ID UNIT V ±30 Gate to Source voltage T C =25°C 1.2 Continuous Drain Current T C =100°C 0.74 A I DM Pulsed Drain current(Note 1) 4.8 I AR Avalanche current(Note 1 ) 1.2 E AR Repetitive avalanche energy(Note 1 ) I AR =1A, R GS =50Ω, V GS =10V E AS Single pulse avalanche energy (Note 2 ) I AS =1A, L = 60mH dv/dt Peak diode recovery dv/dt(Note 3) 4 mJ 50 TO-251/ TO-252 PD 28 T C =25°C TO-220AB Total power dissipation 40 W TO-220F 21 T A =25°C TO-92 TJ T STG TL V /ns 4.5 1 Operation junction temperature -55 to 150 Storage temperature -55 to 150 Maximum soldering temperature, for 10 seconds 1.6mm from case Mounting torque, #6-32 or M3 screw For TO-220AB / TO-220F ºC 300 10 (1.1) lbf . in (N . m) Note: 1. Repetitive rating: pulse width limited by junction temperature. 2 . I AS = 1 A, V DD = 50V, L = 60mH, R GS = 25Ω, starting T J =25°C. 3 . I SD ≤ 1.2 A, di/dt ≤ 200 A/µs, V DD ≤ V (BR)DSS , starting T J =25°C. THERMAL RESISTANCE SYMBOL Rth(j-c) PARAMETER Min. Thermal resistance, junction to case Max. TO-251/ TO-252 4.5 TO-220AB 3.1 TO-220F Rth(j-a) Typ. 6 TO-251/TO-252 110 TO-220AB 62.5 TO-220F 62.5 TO-92 140 Thermal resistance, junction to ambient www.nellsemi.com Page 2 of 8 UNIT ºC/W 1N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER Min. Typ. Max. UNIT OFF CHARACTERISTICS V(BR)DSS ▲V (BR)DSS/▲T J I DSS Drain to source breakdown voltage I D = 250µA, V GS = 0V Breakdown voltage temperature coefficient I D = 250µA, V DS = V GS Drain to source leakage current 600 V 0.4 V/ºC V DS =600V, V GS =0V T C = 25°C 10 V DS =480V, V GS =0V T C =125°C 100 μA Gate to source forward leakage current V GS = 30V, V DS = 0V 100 Gate to source reverse leakage current V GS = -30V, V DS = 0V -100 I GSS nA ON CHARACTERISTICS R DS(ON) Static drain to source on-state resistance I D = 0.6A, V GS = 10V V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA 9.5 2.0 11.5 Ω 4.0 V DYNAMIC CHARACTERISTICS C ISS Input capacitance C OSS Output capacitance C RSS Reverse transfer capacitance V DS = 25V, V GS = 0V, f =1MHz 120 150 20 25 3.0 4.0 5 20 25 60 7 25 25 60 5.0 6.0 pF SWITCHING CHARACTERISTICS t d(ON) tr t d(OFF) tf QG Turn-on delay time Rise time Turn-off delay time V DD = 300V, V GS = 10V, I D = 1.2A, R GS = 50Ω (Note 1, 2) Fall time Total gate charge Q GS Gate to source charge Q GD Gate to drain charge (Miller charge) V DD = 480V, V GS = 10V, I D = 1.2A (Note 1, 2) 1.0 ns nC 2.5 SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD Is (Is D ) PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT V Diode forward voltage I SD = 1.2A, V GS = 0V 1.4 Continuous source to drain current Integral reverse P-N junction diode in the MOSFET 1.2 D (Drain) I SM Pulsed source current 4.8 A G (Gate) S (Source) t rr Reverse recovery time Q rr Reverse recovery charge I SD = 1.2A, V GS = 0V, dI F /dt = 100A/µs Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. www.nellsemi.com Page 3 of 8 160 ns 0.3 μC 1N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION SCHEME 1 N 60 A Current rating, ID 1 = 1.2A MOSFET series N = N-Channel Voltage rating, VDS 60 = 600V Package type A = TO-220AB AF = TO-220F E = TO-92 F = TO-251(I-PAK) G = TO-252(D-PAK) ■ TEST CIRCUITS AND WAVEFORMS Fig.1A Peak diode recovery dv/dt test circuit D.U.T. Fig.1B Peak diode recovery dv/dt waverforms + V GS (Driver) Period D= P.W. P.W. Period V DS V GS =10V + - l SD (D.U.T.) l FM , Body Diode forward current di/dt L l RM Body Diode Reverse Current RG Driver V GS Same Type as D.U.T. * dv/dt controlled by R G * l SD controlled by pulse period * D.U.T.-Device under test V DD V DS (D.U.T.) Body Diode Recovery dv/dt V DD Body Diode www.nellsemi.com Page 4 of 8 Forward Voltage Drop 1N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ■ TEST CIRCUITS AND WAVEFORMS (Cont.) Fig.2A Switching test circuit Fig.2B Switching Waveforms V DS RL 90% V DS V GS RG V DD D.U.T. V GS 10% 10V t d(ON) t d(OFF) tR Pulse Width ≤ 1µs Duty Factor ≤ 0.1% Fig.3A Gate charge test circuit tF Fig.3B Gate charge waveform V GS Same Type as D.U.T. 50kΩ 12V 0.2µF QG 10V 0.3µF V DS Q GS Q GD V GS D.U.T. 3mA Charge Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching waveforms L V DS BV DSS l AS RG V DD l D(t) V DS(t) D.U.T. V DD 10V tp Time tp www.nellsemi.com Page 5 of 8 1N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ■ TYPICAL CHARACTERISTICS Fig.2 Drain-source on-state resistance characteristics 1400 7 1200 9 Drain current, l D (A) Drain Current, l D (A) Fig.1 Drain current vs. Source to drain voltage 1000 800 600 400 200 V GS = 10V l D = 0.6V 5 4 3 2 1 0 0 0 200 400 600 800 1000 0 Source to drain voltage, V SD (mV) 100 200 300 400 500 600 Drain to Source voltage, V DS (mV) Fig.3 Drain current vs. Gate threshold voltage Fig.4 Drain current vs. Drain-Source breakdown voltage 300 450 400 Drain current, l D ( µ A) Drain current, l D (µA) 250 200 150 100 50 350 300 250 200 150 100 50 0 0 0 1 2 3 0 4 Gate threshold voltage, V GS(TH) (V) www.nellsemi.com 200 400 600 800 Drain-Source breakdown voltage, BV DSS (V) Page 6 of 8 1N60 Series SEMICONDUCTOR Nell High Power Products Case Style TO-251 (I-PAK) 6.6(0.26) 2.4(0.095) 2.2(0.086) 6.4(0.52) 1.5(0.059) 5.4(0.212) 0.62(0.024) 0.48(0.019) 1.37(0.054) 5.2(0.204) 6.2(0.244) 6(0.236) 16.3(0.641) 15.9(0.626) 1.9(0.075) 1.8(0.071) 9.4(0.37) 9(0.354) 0.85(0.033) 0.76(0.03) 0.65(0.026) 0.55(0.021) 4.6(0.181) 4.4(0.173) 0.62(0.024) 0.45(0.017) TO-252 (D-PAK) 2.4(0.095) 2.2(0.086) 6.6(0.259) 6.4(0.251) 1.5(0.059) 5.4(0.212) 5.2(0.204) 0.62(0.024) 0.48(0.019) 1.37(0.054) 2 1 6.2(0.244) 6(0.236) 9.35(0.368) 10.1(0.397) 3 2 0.89(0.035) 0.64(0.025) 1.14(0.045) 0.76(0.030) 2.28(0.090) 0.62(0.024) 0.45(0.017) 4.57(0.180) TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 16.13 (0.635) 15.87 (0.625) 3 4.06 (0.160) 3.56 (0.140) 15.32 (0.603) 14.55 (0.573) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 14.22 (0.560) 13.46 (0.530) D (Drain) 0.90 (0.035) 0.70 (0.028) 5.20 (0.205) 4.95 (0.195) 0.56 (0.022) 0.36 (0.014) G (Gate) All dimensions in millimeters(inches) www.nellsemi.com Page 7 of 8 RoHS RoHS S (Source) 1N60 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Case Style TO-92 Ø 5.20(0.205) 4.45(0.175) 5.33(0.210) 4.58(0.180) G D S 0.50(0.020) 0.40(0.016) 12.70(0.500)Min. 0.50(0.020) 0.40(0.016) 0.50(0.020) 0.40(0.016) 1.40(0.055) 1.40(0.055) 1.14(0.045) 1.14(0.045) D (Drain) 4.20(0.165) 3.20(0.126) G (Gate) S (Source) All dimensions in millimeters TO-220F 10.6 10.4 3.4 3.1 2.8 2.6 3.7 3.2 7.1 6.7 16.0 15.8 16.4 15.4 2 1 3 10° 3.3 3.1 13.7 13.5 2.54 TYP 0.9 0.7 0.48 0.44 2.54 TYP 2.85 2.65 4.8 4.6 D (Drain) G (Gate) S (Source) All dimensions in millimeters www.nellsemi.com Page 8 of 8