UNISONIC TECHNOLOGIES CO., LTD Preliminary UT8067-H Power MOSFET 9A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT8067-H is an N-Channel MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge, etc. The UTC UT8067-H is suitable for high efficiency fast switching, MB, VGA, Vcore and POL applications. SOP-8 FEATURES * RDS(ON) )≤18mΩ @ VGS=10V, ID=8A RDS(ON) )≤28mΩ @ VGS=4.5V, ID=5A * High switching speed * Low gate charge SYMBOL Drain Gate Source ORDERING INFORMATION Ordering Number Note: UT8067G-S08-R Pin Assignment: S: Source Package 1 SOP-8 S G: Gate D: Drain 2 S Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-034.b UT8067-H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER RATINGS UNIT 30 V ±20 V TC=25°C 9 A Continuous ID Drain Current TC=100°C 5.7 A 36 A Pulsed (Note 1) IDM Single Pulse Avalanche Current (Note 2) IAS 8 A Single Pulse Avalanche Energy (Note 2) EAS 32 mJ TC=25°C 2.5 W Power Dissipation PD Derate above 25°C 0.02 W/°C Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS THERMAL CHARACTERISTICS PARAMETER Junction to Ambient UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA RATINGS 60 UNIT °C/W 2 of 6 QW-R209-034.b UT8067-H Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Temperature Coefficient Static Drain-Source On-State Resistance (Note 3) SYMBOL TEST CONDITIONS BVDSS ID=250µA, VGS=0V △BVDSS/△TJ Reference to 25°C, ID=1mA VDS=30V, VGS=0V, TJ=25°C IDSS VDS=24V, VGS=0V, TJ=125°C VGS=+20V, VDS=0V IGSS VGS=-20V, VDS=0V VGS(TH) △VGS(TH) RDS(ON) VDS=VGS, ID=250µA VGS=10V, ID=8A VGS=4.5V, ID=5A VDS=10V, ID=5A Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG VGS=0V, VDS=0V, f=1.0MHz SWITCHING PARAMETERS Total Gate Charge (Note 3, 4) QG VGS=4.5V, VDS=15V, ID=8A Gate to Source Charge (Note 3, 4) QGS Gate to Drain Charge (Note 3, 4) QGD Turn-ON Delay Time (Note 3, 4) tD(ON) VDD=15V, VGS=10V, ID=1A, Rise Time (Note 3, 4) tR RG=6Ω Turn-OFF Delay Time (Note 3, 4) tD(OFF) Fall-Time (Note 3, 4) tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Source Current IS VG=VD=0V , Force Current Pulsed Source Current (Note 3) ISM Drain-Source Diode Forward Voltage VSD IS=1A, VGS=0V, TJ=25°C (Note 3) Notes: 1. Repetitive Rating: Pulsed width limited by maximum junction temperature. 2. VDD=25V, VGS=10V, L=1mH, IAS=8A., RG=25Ω, Starting TJ=25°C. 3. The data tested by pulsed, pulse width≤300µs, duty cycle≤2%. 4. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 30 0.04 1.2 1.6 -4 16 23 4 V V/°C 1 µA 10 µA +100 nA -100 nA 2 V mV/°C 18 mΩ 28 mΩ S 345 500 55 80 32 45 3.2 6.4 pF pF pF Ω 4.1 6 1 1.4 2.1 4 2.8 5 7.2 14 15.8 30 4.6 9 nC nC nC ns ns ns ns 9 36 A A 1 V 3 of 6 QW-R209-034.b UT8067-H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS EAS = VDS 90% BVDSS 1 L×IAS2× 2 BVDSS-VDD BVDSS VDD IAS 10% VGS tR td(ON) tON td(OFF) tF tOFF Switching Time Waveform UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VGS EAS Waveform 4 of 6 QW-R209-034.b UT8067-H Preliminary Power MOSFET TYPICAL CHARACTERISTICS Gate to Source Voltage , -VGS (V) Normalized Gate Threshold Voltage (V) Normalized RDSON, (mΩ) Continuous Drain Current, ID (A) Maximum Safe Operation Area 100 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse PDM t1 t2 Notes: Duty Factor: D=t1/t2 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Continuous Drain Current, ID (A) Normalized Thermal Response (RθJA) Normalized Transient Impedance 10us 10 100us 1 1ms 10ms 0.1 0.01 0.1 DC 100ms 10 100 TC=25 1 Drain to Source Voltage, VDS (V) 5 of 6 QW-R209-034.b UT8067-H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-034.b