UNISONIC TECHNOLOGIES CO., LTD UF4848H Preliminary Power MOSFET 3.5A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UF4848H is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low voltage inverter applications. The UTC UF4848H is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits. SOP-8 FEATURES * RDS(ON) < 85 mΩ @ VGS=10V, ID=3.5A RDS(ON) < 95 mΩ @ VGS=6.0V, ID=3.0A * High Cell Density Trench Technology * High Power and Current Handling Capability SYMBOL ORDERING INFORMATION Ordering Number Note: UF4848HG-S08-R Pin Assignment: S: Source Package G: Gate SOP-8 D: Drain 1 S 2 S Pin Assignment 3 4 5 6 7 S G D D D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-177 .a UF4848H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT VDSS 150 V VGSS ±20 V Continuous ID 3.5 A Drain Current Pulsed (Note 2) IDM 25 A Avalanche Current IAR 25 A Avalanche Energy Single Pulsed (Note 3) EAS 32 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 10 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=0.1mH, IAS=2.5A, VDD=50V, RG=0 Ω, Starting TJ=25°C 4. ISD ≤ 2.5A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ=25°C 5. The data tested by surface mounted Pulse test ; Pulse width ≤ 300μs, duty cycle ≤2%. Drain-Source Voltage Gate-Source Voltage THERMAL DATA PARAMETER Junction to Ambient Junction to Case Note: Surface Mounted on 1”×1” FR4 board. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATING 85 12.5 UNIT °C/W °C/W 2 of 6 QW-R209-177 .a UF4848H Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER STATIC CHARACTERISTICS Zero Gate Voltage Drain Current Gate-Source Leakage Current SYMBOL IDSS Forward Reverse IGSS TEST CONDITIONS MIN VDS=120V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 On State Drain Current (Note 1) ID(ON) VDS≥5V, VGS=10V 25 Static Drain-Source On-State Resistance VGS=10V, ID=3.5A RDS(ON) (Note 1) VGS=6.0V, ID=3.0A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS DYNAMIC PARAMETERS Total Gate Charge (Note 1) QG VDS=50V, VGS=10V, ID=1.3A , Gate to Source Charge QGS IG=100µA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time (Note 1) tD(ON) Rise Time tR VDD=30V, VGS=10V, ID=0.5A, R Turn-OFF Delay Time tD(OFF) G=25Ω (Note 1, 2) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD IS=2.5A, VGS=0V Body Diode Reverse Recovery Time (Note 1) trr IS=2.5A, VGS=0V, dIF/dt=100A/μs Body Diode Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT 68 76 1 +100 -100 µA nA nA 4.0 V A mΩ mΩ 85 95 1690 126 46 pF pF pF 105 12 4 70 40 195 75 nC nC nC ns ns ns ns 0.75 60 95 3.5 25 1.2 A A V nS nC 3 of 6 QW-R209-177 .a UF4848H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-177 .a UF4848H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R209-177 .a UF4848H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-177 .a