UNISONIC TECHNOLOGIES CO., LTD UF4482M Preliminary POWER MOSFET 6.0A, 100V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UF4482M is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and low gate charge, etc. The UTC UF4482M applies to primary side switch, synchronous rectifier, Motor Drives, etc. SOP-8 FEATURES * RDS(ON) < 37 mΩ @ VGS=10V, ID=6.0A RDS(ON) < 42 mΩ @ VGS=4.5V, ID=5.0A * High Cell Density Trench Technology * High Power and Current Handling Capability SYMBOL ORDERING INFORMATION Ordering Number Note: UF4482MG-S08-R Pin Assignment: S: Source Package G: Gate SOP-8 D: Drain 1 S 2 S Pin Assignment 3 4 5 6 7 S G D D D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-170 .a UF4482M Preliminary Power MOSFET ABSOLUTE MAXIMUM RATING (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT VDSS 100 V VGSS ±20 V Continuous ID 6 A Drain Current Pulsed (Note 2) IDM 42 A Avalanche Current (Note 3) IAR 35 A Avalanche Energy (Note 3) Single Pulsed (Note 3) EAS 31 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4 V/nS Power Dissipation PD 3.1 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L =0.1mH, IAS =35A, VDD =50V, RG = 50Ω, Starting TJ = 25°C 4. ISD ≤ 6.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C Drain-Source Voltage Gate-Source Voltage THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 59 1.05 UNIT °C/W °C/W 2 of 6 QW-R209-170 .a UF4482M Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance IGSS VGS(TH) RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS=100V, VGS=0V,TJ=25°C VDS=100V, VGS=0V,TJ=55°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V 100 VDS=VGS, ID=250µA VGS=10V,ID=6.0A VGS=4.5V,ID=5.0A 1.0 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 1) QG VDS=50V, VGS=10V, ID=1.3A , Gate to Source Charge QGS IG=100µA (Note 1, 2) Gate to Drain Charge QGD Turn-on Delay Time (Note 1) tD(ON) VDD=30V, VGS=10V, ID=0.5A, Rise Time tR RG=25Ω (Note 1, 2) Turn-off Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD IS=1.0A, VGS=0V Reverse Recovery Time (Note 1) trr IS=6A, VGS=0V, dIF/dt=100A/μs Reverse Recovery Charge Qrr Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 30 33 1 5 +100 -100 V µA µA nA nA 3.0 37 42 V mΩ mΩ 2444 130 75 pF pF pF 190 10 6 55 40 500 150 nC nC nC ns ns ns ns 6 24 1 50 55 A A V nS nC 3 of 6 QW-R209-170 .a UF4482M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-170 .a UF4482M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R209-170 .a UF4482M Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-170 .a