DISCRETE SEMICONDUCTORS DATA SHEET PMMT591A PNP BISS transistor Product data sheet Supersedes data of 2001 Jun 11 2004 Jan 13 NXP Semiconductors Product data sheet PNP BISS transistor PMMT591A FEATURES PINNING • High current (max. 1 A) PIN • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Battery powered units where high current and low power consumption are important. DESCRIPTION handbook, halfpage 3 3 PNP BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. NPN complement: PMMT491A. 1 MARKING 2 TYPE NUMBER MARKING PMMT591A 1 CODE(1) 2 Top view 9B* MAM256 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER PMMT591A PACKAGE NAME − DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −1 A ICM peak collector current − −2 A IBM peak base current − −1 A Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2004 Jan 13 2 NXP Semiconductors Product data sheet PNP BISS transistor PMMT591A THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 500 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −30 V − −100 nA ICEO collector cut-off current IB = 0; VCE = −30 V − −100 nA IEBO emitter cut-off current IC = 0; VEB = −5 V − −100 nA hFE DC current gain VCE = −5 V; note 1 IC = −1 mA 300 − IC = −100 mA 300 800 IC = −500 mA 250 − IC = −1 A 160 − IC = −100 mA; IB = −1 mA − −200 mV IC = −500 mA; IB = −20 mA − −350 mV IC = −1 A; IB = −100 mA − −500 mV VCEsat collector-emitter saturation voltage note 1 VBEsat base-emitter saturation voltage IC = −1 A; IB = −50 mA; note 1 − −1.1 V VBE base-emitter voltage VCE = −5 V; IC = −1 A; note 1 − −1 V Cc collector capacitance IE = Ie = 0; VCB = −10 V; f = 1 MHz − 12 pF fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz 150 − MHz Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Jan 13 3 NXP Semiconductors Product data sheet PNP BISS transistor PMMT591A MLD638 1200 MLD639 −10 handbook, halfpage handbook, halfpage hFE VBE (V) (1) 800 −1 (1) (2) (2) 400 (3) (3) 0 10−1 −1 −102 −10 −103 −10−1 −10−1 −104 IC (mA) −1 VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MLD640 −103 handbook, halfpage −10 −102 −103 −104 IC (mA) Base-emitter voltage as a function of collector current; typical values. MLD641 300 handbook, halfpage VCEsat fT (MHz) (mV) (1) −102 200 (3) (2) −10 100 −1 −1 −10 −102 −103 IC (mA) 0 −104 −200 0 −400 −600 −800 −1000 IC (mA) IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −10 V. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Jan 13 4 Transition frequency as a function of collector current; typical values. NXP Semiconductors Product data sheet PNP BISS transistor PMMT591A PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Jan 13 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 5 NXP Semiconductors Product data sheet PNP BISS transistor PMMT591A DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Jan 13 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/05/pp7 Date of release: 2004 Jan 13 Document order number: 9397 750 12529