DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4140DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2001 Dec 13 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor FEATURES PBSS4140DPN QUICK REFERENCE DATA • 600 mW total power dissipation SYMBOL • Low collector-emitter saturation voltage PARAMETER MAX. UNIT VCEO collector-emitter voltage 40 V IC peak collector current 1 A • Improved device reliability due to reduced heat generation ICM peak collector current 2 A • Replaces two SOT23 packaged low VCEsat transistors on same PCB area TR1 NPN − − TR2 PNP − − RCEsat equivalent on-resistance <500 mΩ • High current capability • Reduces required PCB area • Reduced pick and place costs. PINNING PIN APPLICATIONS • General purpose switching and muting • LCD backlighting • Supply line switching circuits DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 • Battery driven equipment (mobile phones, video cameras and hand-held devices). 6 handbook, halfpage 5 6 4 5 4 DESCRIPTION TR2 NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package. TR1 1 MARKING TYPE NUMBER PBSS4140DPN 2001 Dec 13 Top view 2 3 1 2 3 MAM445 MARKING CODE Fig.1 M2 2 Simplified outline SC74 (SOT457) and symbol. NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 1 A ICM peak collector current − 2 A IBM peak base current − 1 A Ptot total power dissipation − 370 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 600 mW Tamb ≤ 25 °C; note 1 Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 VALUE UNIT 208 K/W Note 1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2. 2001 Dec 13 3 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor unless otherwise specified; for the PNP transistor with negative polarity VCB = 40 V; IE = 0 − − 100 nA VCB = 40 V; IE = 0; Tj = 150 °C − − 50 μA VCE = 30 V; IB = 0 − − 100 nA emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA hFE DC current gain VCE = 5 V; IC = 1 mA 300 − − VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA − − 200 mV IC = 500 mA; IB = 50 mA − − 250 mV IC = 1 A; IB = 100 mA − − 500 mV VCE = 5 V; IC = 500 mA 300 − 900 ICBO collector-base cut-off current ICEO collector-emitter cut-off current IEBO NPN transistor hFE DC current gain VCE = 5 V; IC = 1 A 200 − − VBEsat base-emitter saturation voltage IC = 1 A; IB = 100 mA − − 1.2 V VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A − − 1.1 V RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 − 260 <500 mΩ fT transition frequency VCE =10 V; IC = 50 mA; f = 100 MHz 150 − − MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − − 10 pF VCE = −5 V; IC = −100 mA 300 − 800 VCE = −5 V; IC = −500 mA 250 − − PNP transistor hFE DC current gain VCE = −5 V; IC = −1 A 160 − − VBEsat base-emitter saturation voltage IC = −1 A; IB = −50 mA − − −1.1 V VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A − − −1.0 V RCEsat equivalent on-resistance IC = −500 mA; IB −50 mA; note 1 − 300 <500 mΩ fT transition frequency VCE = −10 V; IC = −50 mA; f = 100 MHz 150 − − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0; f =1 MHz − − 12 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2001 Dec 13 4 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN MLD642 1000 MLD635 10 handbook, halfpage handbook, halfpage hFE 800 VBE (1) (V) 600 (2) (1) 1 400 (2) (3) (3) 200 0 10−1 1 102 10 10−1 10−1 103 104 IC (mA) 1 TR1 (NPN); VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR1 (NPN); VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MLD636 103 handbook, halfpage 10 102 103 104 IC (mA) Base-emitter voltage as a function of collector current; typical values. MHC126 102 handbook, halfpage RCEsat (Ω) VCEsat (mV) (1) 102 10 (2) (3) 10 1 (1) (2) (3) 1 1 10 102 103 IC (mA) 10−1 10−1 104 1 TR1 (NPN); IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 102 103 104 IC (mA) TR1 (NPN); IC/IB = 10. (1) Tamb = 150 °C. Collector-emitter saturation voltage as a function of collector current; typical values. 2001 Dec 13 10 5 Equivalent on-resistance as a function of collector current; typical values. NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN MLD637 400 handbook, halfpage fT (MHz) 300 200 100 0 0 200 400 600 1000 800 IC (mA) TR1 (NPN); VCE = 10 V. Fig.6 Transition frequency as a function of collector current; typical values. 2001 Dec 13 6 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN MLD638 1200 MLD639 −10 handbook, halfpage handbook, halfpage hFE VBE (V) (1) 800 −1 (1) (2) (2) 400 (3) (3) 0 10−1 −1 −102 −10 −103 −10−1 −10−1 −104 IC (mA) −1 TR2 (PNP); VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR2 (PNP); VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.7 Fig.8 DC current gain as a function of collector current; typical values. MLD640 −103 handbook, halfpage −10 −102 −103 −104 IC (mA) Base-emitter voltage as a function of collector current; typical values. MHC127 102 handbook, halfpage RCEsat (Ω) VCEsat (mV) (1) −102 10 (3) (2) −10 1 (1) (2) (3) −1 −1 −10 −102 −103 IC (mA) 10−1 −10−1 −104 TR2 (PNP); IC/IB = 10. −102 −103 −104 IC (mA) (2) Tamb = 25 °C. (3) Tamb = −55 °C. Collector-emitter saturation voltage as a function of collector current; typical values. 2001 Dec 13 −10 TR2 (PNP); IC/IB = 10. (1) Tamb = 150 °C. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.9 −1 Fig.10 Equivalent on-resistance as a function of collector current; typical values. 7 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN MLD641 300 handbook, halfpage fT (MHz) 200 100 0 0 −200 −400 −600 −800 −1000 IC (mA) TR2 (PNP); VCE = -10 V. Fig.11 Transition frequency as a function of collector current; typical values. 2001 Dec 13 8 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 2001 Dec 13 REFERENCES IEC JEDEC EIAJ SC-74 9 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4140DPN DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2001 Dec 13 10 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp11 Date of release: 2001 Dec 13 Document order number: 9397 750 09062