PHILIPS PBSS4140DPN

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
PBSS4140DPN
40 V low VCEsat NPN/PNP
transistor
Product specification
2001 Dec 13
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
FEATURES
PBSS4140DPN
QUICK REFERENCE DATA
• 600 mW total power dissipation
SYMBOL
• Low collector-emitter saturation voltage
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
40
V
IC
peak collector current
1
A
• Improved device reliability due to reduced heat
generation
ICM
peak collector current
2
A
• Replaces two SOT23 packaged low VCEsat transistors
on same PCB area
TR1
NPN
−
−
TR2
PNP
−
−
RCEsat
equivalent on-resistance
<500
mΩ
• High current capability
• Reduces required PCB area
• Reduced pick and place costs.
PINNING
PIN
APPLICATIONS
• General purpose switching and muting
• LCD backlighting
• Supply line switching circuits
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
6
handbook, halfpage
5
6
4
5
4
DESCRIPTION
TR2
NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457)
plastic package.
TR1
1
MARKING
TYPE NUMBER
PBSS4140DPN
2001 Dec 13
Top view
2
3
1
2
3
MAM445
MARKING CODE
Fig.1
M2
2
Simplified outline SC74 (SOT457) and
symbol.
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
−
40
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
2
A
IBM
peak base current
−
1
A
Ptot
total power dissipation
−
370
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
−
600
mW
Tamb ≤ 25 °C; note 1
V
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
VALUE
UNIT
208
K/W
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
2001 Dec 13
3
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
VCB = 40 V; IE = 0
−
−
100
nA
VCB = 40 V; IE = 0; Tj = 150 °C
−
−
50
µA
VCE = 30 V; IB = 0
−
−
100
nA
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
100
nA
hFE
DC current gain
VCE = 5 V; IC = 1 mA
300
−
−
VCEsat
collector-emitter saturation
voltage
IC = 100 mA; IB = 1 mA
−
−
200
mV
IC = 500 mA; IB = 50 mA
−
−
250
mV
IC = 1 A; IB = 100 mA
−
−
500
mV
−
900
ICBO
collector-base cut-off current
ICEO
collector-emitter cut-off current
IEBO
NPN transistor
hFE
DC current gain
VCE = 5 V; IC = 500 mA
300
VCE = 5 V; IC = 1 A
200
−
−
VBEsat
base-emitter saturation voltage
IC = 1 A; IB = 100 mA
−
−
1.2
V
VBEon
base-emitter turn-on voltage
VCE = 5 V; IC = 1 A
−
−
1.1
V
RCEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
−
260
<500
mΩ
fT
transition frequency
VCE =10 V; IC = 50 mA; f = 100 MHz
150
−
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
−
10
pF
VCE = −5 V; IC = −100 mA
300
−
800
VCE = −5 V; IC = −500 mA
250
−
−
PNP transistor
hFE
DC current gain
VCE = −5 V; IC = −1 A
160
−
−
VBEsat
base-emitter saturation voltage
IC = −1 A; IB = −50 mA
−
−
−1.1
V
VBEon
base-emitter turn-on voltage
VCE = −5 V; IC = −1 A
−
−
−1.0
V
RCEsat
equivalent on-resistance
IC = −500 mA; IB −50 mA; note 1
−
300
<500
mΩ
fT
transition frequency
VCE = −10 V; IC = −50 mA;
f = 100 MHz
150
−
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f =1 MHz
−
−
12
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2001 Dec 13
4
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
MLD642
1000
MLD635
10
handbook, halfpage
handbook, halfpage
hFE
800
VBE
(1)
(V)
600
(2)
(1)
1
400
(2)
(3)
(3)
200
0
10−1
1
102
10
10−1
10−1
103
104
IC (mA)
1
TR1 (NPN); VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
TR1 (NPN); VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MLD636
103
handbook, halfpage
10
102
103
104
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
MHC126
102
handbook, halfpage
RCEsat
(Ω)
VCEsat
(mV)
(1)
102
10
(2)
(3)
10
1
(1)
(2)
(3)
1
1
10
102
103
IC (mA)
10−1
10−1
104
1
TR1 (NPN); IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
102
103
104
IC (mA)
TR1 (NPN); IC/IB = 10.
Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Dec 13
10
5
Equivalent on-resistance as a function of
collector current; typical values.
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
MLD637
400
handbook, halfpage
fT
(MHz)
300
200
100
0
0
200
400
600
1000
800
IC (mA)
TR1 (NPN); VCE = 10 V.
Fig.6
Transition frequency as a function of
collector current; typical values.
2001 Dec 13
6
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
MLD638
1200
MLD639
−10
handbook, halfpage
handbook, halfpage
hFE
VBE
(V)
(1)
800
−1
(1)
(2)
(2)
400
(3)
(3)
0
10−1
−1
−102
−10
−103
−10−1
−10−1
−104
IC (mA)
−1
TR2 (PNP); VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
TR2 (PNP); VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.7
Fig.8
DC current gain as a function of collector
current; typical values.
MLD640
−103
handbook, halfpage
−10
−102
−103
−104
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
MHC127
102
handbook, halfpage
RCEsat
(Ω)
VCEsat
(mV)
(1)
−102
10
(3)
(2)
−10
1
(1)
(2)
(3)
−1
−1
−10
−102
−103
IC (mA)
10−1
−10−1
−104
TR2 (PNP); IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.9
−10
−102
−103
−104
IC (mA)
TR2 (PNP); IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Dec 13
−1
Fig.10 Equivalent on-resistance as a function of
collector current; typical values.
7
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
MLD641
300
handbook, halfpage
fT
(MHz)
200
100
0
0
−200
−400
−600
−800
−1000
IC (mA)
TR2 (PNP); VCE = -10 V.
Fig.11 Transition frequency as a function of
collector current; typical values.
2001 Dec 13
8
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
E
B
y
A
HE
6
5
X
v M A
4
Q
pin 1
index
A
A1
c
1
2
3
Lp
bp
e
w M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.013
0.40
0.25
0.26
0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
SOT457
2001 Dec 13
REFERENCES
IEC
JEDEC
EIAJ
SC-74
9
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
01-05-04
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Dec 13
10
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
NOTES
2001 Dec 13
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA73
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Printed in The Netherlands
613514/01/pp12
Date of release: 2001
Dec 13
Document order number:
9397 750 09062