SO T2 23 PBSS4041NZ 60 V, 7 A NPN low VCEsat (BISS) transistor Rev. 2 — 8 August 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4041PZ. 1.2 Features and benefits Very low collector-emitter saturation voltage VCEsat High energy efficiency due to less heat generation High collector current capability IC and ICM AEC-Q101 qualified High collector current gain (hFE) at high IC Smaller required PCB area than for conventional transistors 1.3 Applications Loadswitch Charging circuits Battery-driven devices Power switches (e.g. motors, fans) Power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 60 V IC collector current - - 7 A ICM peak collector current single pulse; tp ≤ 1 ms - - 15 A RCEsat collector-emitter saturation resistance IC = 6 A; IB = 600 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 17.5 25 mΩ PBSS4041NZ NXP Semiconductors 60 V, 7 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter 4 C collector Simplified outline Graphic symbol C 4 B 1 2 3 E SOT223 (SC-73) sym123 3. Ordering information Table 3. Ordering information Type number Package PBSS4041NZ Name Description Version SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 4. Marking Table 4. Marking codes Type number Marking code PBSS4041NZ PB4041NZ 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 60 V VEBO emitter-base voltage open collector - 5 V IC collector current - 7 A ICM peak collector current single pulse; tp ≤ 1 ms - 15 A IB base current Ptot total power dissipation PBSS4041NZ Product data sheet Tamb ≤ 25 °C All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 August 2012 - 1 A [1] - 770 mW [2] - 1700 mW [3] - 2600 mW © NXP B.V. 2012. All rights reserved. 2 of 15 PBSS4041NZ NXP Semiconductors 60 V, 7 A NPN low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit Tj junction temperature Conditions - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Unit [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aac060 3.0 (1) Ptot (W) 2.0 (2) 1.0 (3) 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air thermal resistance from junction to solder point Min Typ Max [1] - - 160 K/W [2] - - 75 K/W [3] - - 50 K/W - - 11 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. PBSS4041NZ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 August 2012 © NXP B.V. 2012. All rights reserved. 3 of 15 PBSS4041NZ NXP Semiconductors 60 V, 7 A NPN low VCEsat (BISS) transistor 006aac061 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac062 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4041NZ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 August 2012 © NXP B.V. 2012. All rights reserved. 4 of 15 PBSS4041NZ NXP Semiconductors 60 V, 7 A NPN low VCEsat (BISS) transistor 006aac063 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.50 0.33 10 0.20 0.10 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 102 10 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Symbol Parameter ICBO collector-base cut-off current Conditions Min Typ Max Unit VCB = 60 V; IE = 0 A; Tamb = 25 °C - - 100 nA VCB = 60 V; IE = 0 A; Tj = 150 °C - - 50 µA ICES collector-emitter cut-off VCE = 48 V; VBE = 0 V; Tamb = 25 °C current - - 100 nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 100 nA hFE DC current gain VCE = 2 V; IC = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 300 500 - VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 300 500 - VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 300 500 - VCE = 2 V; IC = 4 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 250 400 - VCE = 2 V; IC = 6 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 100 200 - VCE = 2 V; IC = 7 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 50 100 - PBSS4041NZ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 August 2012 © NXP B.V. 2012. All rights reserved. 5 of 15 PBSS4041NZ NXP Semiconductors 60 V, 7 A NPN low VCEsat (BISS) transistor Table 7. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit VCEsat collector-emitter saturation voltage IC = 1 A; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 25 35 mV IC = 1 A; IB = 10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 43 60 mV IC = 2 A; IB = 40 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 53 75 mV IC = 4 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 78 110 mV IC = 4 A; IB = 40 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 115 160 mV IC = 7 A; IB = 350 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 130 195 mV RCEsat collector-emitter saturation resistance IC = 6 A; IB = 600 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 17.5 25 mΩ VBEsat base-emitter saturation IC = 1 A; IB = 100 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 0.83 0.9 V IC = 4 A; IB = 400 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 0.98 1.05 V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 0.72 0.85 V td delay time - 55 - ns tr rise time VCC = 12.5 V; IC = 1 A; IBon = 0.05 A; IBoff = -0.05 A; Tamb = 25 °C - 55 - ns ton turn-on time - 110 - ns ts storage time - 1220 - ns tf fall time - 230 - ns toff turn-off time - 1450 - ns fT transition frequency VCE = 10 V; IC = 100 mA; f = 100 MHz; Tamb = 25 °C - 105 - MHz Cc collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - 50 - pF PBSS4041NZ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 August 2012 © NXP B.V. 2012. All rights reserved. 6 of 15 PBSS4041NZ NXP Semiconductors 60 V, 7 A NPN low VCEsat (BISS) transistor 006aac156 1500 006aac157 16.0 IB (mA) = 120 108 IC (A) hFE 12.0 (1) 96 84 72 60 48 1000 (2) 36 24 8.0 12 500 (3) 4.0 0 10−1 1 10 102 103 0.0 0.0 104 105 IC (mA) 1.0 2.0 3.0 4.0 5.0 VCE (V) Tamb = 25 °C VCE = 2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values Fig 6. 006aac158 1.2 VBE (V) Collector current as a function of collector-emitter voltage; typical values 006aac159 1.3 VBEsat (V) 0.8 0.9 (1) (1) (2) (2) (3) 0.4 0.0 10−1 Fig 7. 1 10 0.5 102 103 (3) 0.1 10−1 104 105 IC (mA) 1 10 VCE = 2 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values PBSS4041NZ Product data sheet Fig 8. 102 103 104 105 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 August 2012 © NXP B.V. 2012. All rights reserved. 7 of 15 PBSS4041NZ NXP Semiconductors 60 V, 7 A NPN low VCEsat (BISS) transistor 006aac160 1 006aac161 1 VCEsat (V) VCEsat (V) 10−1 10−1 (1) 10−2 10−2 (2) (1) (2) (3) (3) 10−3 10−1 Fig 9. 1 10 102 103 104 105 IC (mA) 10−3 10−1 1 10 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Collector-emitter saturation voltage as a function of collector current; typical values 006aac162 102 102 103 104 105 IC (mA) Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values 006aac163 103 RCEsat (Ω) RCEsat (Ω) 102 10 10 1 10−1 (1) 1 (1) 10−1 (2) (2) (3) (3) 10−2 10−1 1 10 102 103 104 105 IC (mA) 10−2 10−1 1 10 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values PBSS4041NZ Product data sheet 102 103 104 105 IC (mA) Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 August 2012 © NXP B.V. 2012. All rights reserved. 8 of 15 PBSS4041NZ NXP Semiconductors 60 V, 7 A NPN low VCEsat (BISS) transistor 8. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 Fig 14. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standardQ101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBSS4041NZ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 August 2012 © NXP B.V. 2012. All rights reserved. 9 of 15 PBSS4041NZ NXP Semiconductors 60 V, 7 A NPN low VCEsat (BISS) transistor 9. Package outline 6.7 6.3 3.1 2.9 1.8 1.5 4 1.1 0.7 7.3 6.7 3.7 3.3 1 2 3 0.8 0.6 2.3 4.6 0.32 0.22 Dimensions in mm 04-11-10 Fig 15. SOT223 (SC-73) 10. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig 16. Reflow soldering footprint for SOT223 (SC-73) PBSS4041NZ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 August 2012 © NXP B.V. 2012. All rights reserved. 10 of 15 PBSS4041NZ NXP Semiconductors 60 V, 7 A NPN low VCEsat (BISS) transistor 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 1.9 (3×) 2.7 preferred transport direction during soldering 2.7 1.1 1.9 (2×) sot223_fw Fig 17. Wave soldering footprint for SOT223 (SC-73) PBSS4041NZ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 August 2012 © NXP B.V. 2012. All rights reserved. 11 of 15 PBSS4041NZ NXP Semiconductors 60 V, 7 A NPN low VCEsat (BISS) transistor 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS4041NZ v.2 20120808 Product data sheet - PBSS4041NZ v.1 - - Modifications: PBSS4041NZ v.1 PBSS4041NZ Product data sheet • • 7 “Characteristics”: VCEsat corrected 12 “Legal information”: updated 20100331 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 August 2012 © NXP B.V. 2012. All rights reserved. 12 of 15 PBSS4041NZ NXP Semiconductors 60 V, 7 A NPN low VCEsat (BISS) transistor 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 August 2012 © NXP B.V. 2012. All rights reserved. 13 of 15 PBSS4041NZ NXP Semiconductors 60 V, 7 A NPN low VCEsat (BISS) transistor Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G reenChip,HiPerSmart,HITAG,I²C-bus logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:[email protected] PBSS4041NZ Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 August 2012 © NXP B.V. 2012. All rights reserved. 14 of 15 PBSS4041NZ NXP Semiconductors 60 V, 7 A NPN low VCEsat (BISS) transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . .9 Quality information . . . . . . . . . . . . . . . . . . . . . . .9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 8 August 2012 Document identifier: PBSS4041NZ