AN10405 Increased circuit efficiency, less required board space and saved money by replacing power transistors by low VCEsat (BISS) transistors Rev. 01.00 — 06 January 2006 Application note Document information Info Content Keywords Bipolar transistors, BISS, low VCEsat, PBSS, power transistors Abstract This application note provides information on how to make use of a cost saving opportunity by replacing older medium power and power transistors by Philips’ low VCEsat (BISS) transistors. A cross reference table provides a cross reference for leaded and SMD types. Further spreadsheets show a comparison of the most common parameters (VCEO, IC, VCEsat and hFE). AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors Revision history Rev Date Description 01 20060106 Initial document Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, please send an email to: [email protected] <12NC> Application note © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 06 January 2006 2 of 20 AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors 1. Introduction This application note provides information on how to make use of a cost saving opportunity by replacing older medium power and power transistors by Philips’ low VCEsat (BISS) transistors1. A cross reference table provides a cross reference for leaded and SMD types. Further spreadsheets show a comparison of the most common parameters (VCEO, IC, VCEsat and hFE). 2. Reduced power dissipation due to low saturation voltage The low saturation voltage VCEsat, high collector current capability IC(max) and high current gain hFE make BISS transistors an excellent alternative to older medium power transistors in SOT54 (TO-92), SOT223 (SC-73) and SOT89 (SC-62) and power transistors in DPAK, TO-220 and TO-126. Particularly, for switching applications the transistors’ power dissipation is significantly lower due to a low collector-emitter saturation voltage as the following example shows: Table 1: BISS transistors dissipate less power enabling to select smaller and cheaper packages Example Power transistor BISS transistor Type BD132 PBSS5350S Package SOT32 (TO-126) SOT54 (TO-92) IC 2A 2A VCEsat 700 mV 300 mV PC = VCEsat x IC 1400 mW 600 mW hFE(min) 20 100 Due to the lower power dissipation transistors with a smaller package can be selected. The PBSS5350S in SOT54 (TO-92) for example replaces a BD132 in TO-126. Keeping in mind that for discrete semiconductors package costs are higher than the cost for the silicon savings can be realized by using small SOT54 BISS transistors. Additionally, the circuit efficiency increases and less board space is necessary. Further, BISS transistors present a higher current gain hFE. As a result, less base current is required to control the transistor which takes load from the driving circuit. While for switching applications VCEsat is very low, the higher VCE for linear applications leads to a higher power dissipation. A replacement with BISS transistors is limited to 830 mW for leaded BISS transistors and to 1350 mW for surface mount applications (2 W for SOT223 transistors on 6 cm² collector mounting pad). 1 More information on low VCEsat (BISS) transistors is given in the following application notes: AN10116: Breakthrough In Small Signal - Low VCEsat (BISS) Transistors and their Applications AN10393: BISS transistors and MEGA Schottky rectifiers – improved technologies for discrete semiconductors <12NC> Application note © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 06 January 2006 3 of 20 AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors Only a few BISS transistor types are necessary to replace numerous power transistors: • PBSS8110_ / PBSS9110_ 1 A / 100 V and • PBSS4350_ / PBSS5350_ 3 A / 50 V replace - power transistors with 1 – 3 A rated collector current. • PBSS4540Z / PBSS5540Z 5 A / 40 V and • PBSS302ND / PBSS302PD 4 A / 40 V replace - power transistors with 4 – 5 A rated collector current. Table 19: - Table 24: show the most common parameters of these types for reference. 3. Common replacements Many popular transistors are included in the cross reference table (Table 2:). Main cross reference data given in Table 3: – Table 18: are provided to confirm the selection. For SMD replacements these tables provide up to three alternatives with the same electrical but different thermal specifications. This enables to use the smallest package possible depending on the actual power dissipation. The BISS transistors in Table 2: are selected with focus on reducing the number of types. This implies that the provided replacement must not necessarily be the optimum solution with regard to the achievable power dissipation. <12NC> Application note © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 06 January 2006 4 of 20 AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors 4. General selection process For transistors not included in the cross reference table the following steps need to be done by comparing the data sheets: 1. Limiting values, VCEO: BISS transistors must have equal or higher value. 2. Limiting values, IC: BISS transistors must have equal or higher value. 3. Characteristics, VCEsat(max): BISS transistors must have equal or lower value, pay attention to comparable operating conditions IC and IB. Notes to VCEsat: - This parameter is mostly important for switching applications (i.e. not relevant for linear applications). - The lower the ratio IC/IB the lower the saturation voltage but the higher the required base current. - VCEsat values of BISS transistors are far below the values of power transistors. 4. Characteristics, hFE(min): BISS transistors must have equal or higher value, pay attention to comparable operating conditions IC and VCE. Notes to hFE: - This parameter is important for linear and switching applications. - The higher VCE the higher the current gain at a specified current. - hFE values of BISS transistors are far above the values of power transistors. 5. Calculate resulting power dissipation Ptot to select the most appropriate package. • Switching applications: Ptot = VCEsat x IC + VBEsat x IB • Linear applications: Ptot = VCE x IC + VBE x IB Notes to Ptot: - For a rough estimation the input power dissipation (VBE(sat) x IB) can be neglected. - For linear applications power dissipation may become an issue since VCE is significantly higher than VCEsat in switching applications. - For the package selection the mounting conditions must be considered: SOT54 SOT223*) SOT89*) SOT457*) SOT23*) *) 0.83 W 1 – 1.35 W 1W 0.6 W 0.48 W Mounted on 1 cm² collector mounting pad - For switching applications a high power dissipation capability of the package is often not necessary anymore since the heat generation is much lower using BISS transistors due to the very low VCEsat values. - An even lower power dissipation due to lower VCEsat values can be achieved by selecting BISS transistors with a lower VCEO value. For example if the application requires only 20 V breakdown voltage, a 20 V transistor should be used instead of a 40 V transistor. For most of the medium power and power transistors the types given in Table 19:– Table 24: should be sufficient. If not please look for data sheets of transistors starting with “PBSS” on the Internet or contact your nearest Philips sales office. <12NC> Application note © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 06 January 2006 5 of 20 AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors 5. Cross reference table for common replacements Table 2: Cross reference table for replacing (medium) power by BISS transistors original type replacement SOT54 SOT223 SOT457 SOT23 cross ref. data BC635 PBSS8110S PBSS8110Z PBSS8110D PBSS8110T Table 3 BC636 PBSS9110S PBSS9110Z PBSS9110D PBSS9110T Table 11 BC637 PBSS8110S PBSS8110Z PBSS8110D PBSS8110T Table 3 BC638 PBSS9110S PBSS9110Z PBSS9110D PBSS9110T Table 11 BC639 PBSS8110S PBSS8110Z PBSS8110D PBSS8110T Table 3 BC640 PBSS9110S PBSS9110Z PBSS9110D PBSS9110T Table 11 BCP51 PBSS9110S PBSS9110Z PBSS9110D PBSS9110T Table 11 BCP52 PBSS9110S PBSS9110Z PBSS9110D PBSS9110T Table 11 BCP53 PBSS9110S PBSS9110Z PBSS9110D PBSS9110T Table 11 BCP54 PBSS8110S PBSS8110Z PBSS8110D PBSS8110T Table 3 BCP55 PBSS8110S PBSS8110Z PBSS8110D PBSS8110T Table 3 BCP56 PBSS8110S PBSS8110Z PBSS8110D PBSS8110T Table 3 BCX51 PBSS9110S PBSS9110Z PBSS9110D PBSS9110T Table 11 BCX52 PBSS9110S PBSS9110Z PBSS9110D PBSS9110T Table 11 BCX53 PBSS9110S PBSS9110Z PBSS9110D PBSS9110T Table 11 BCX54 PBSS8110S PBSS8110Z PBSS8110D PBSS8110T Table 3 BCX55 PBSS8110S PBSS8110Z PBSS8110D PBSS8110T Table 3 BCX56 PBSS8110S PBSS8110Z PBSS8110D PBSS8110T Table 3 BD131 PBSS4350S PBSS4350Z PBSS4350D Table 7 BD132 PBSS5350S PBSS5350Z PBSS5350D Table 15 BD135 PBSS4350S PBSS4350Z PBSS4350D Table 5 BD136 PBSS5350S PBSS5350Z PBSS5350D Table 13 BD137 PBSS4350S PBSS4350Z PBSS4350D Table 5 BD138 PBSS5350S PBSS5350Z PBSS5350D Table 13 BD139 PBSS4350S PBSS4350Z PBSS4350D Table 5 BD140 PBSS5350S PBSS5350Z PBSS5350D Table 13 BD329 PBSS4350S PBSS4350Z PBSS4350D Table 8 BD330 PBSS5350S PBSS5350Z PBSS5350D Table 16 BD433 PBSS4540Z PBSS302ND Table 10 BD434 PBSS5540Z PBSS302PD Table 18 BD435 PBSS4540Z PBSS302ND Table 10 BD436 PBSS5540Z PBSS302PD Table 18 KSH200 PBSS4540Z KSH210 Table 9 PBSS5540Z Table 17 KSH31 PBSS4350S PBSS4350Z PBSS4350D Table 6 KSH32 PBSS5350S PBSS5350Z PBSS5350D Table 14 PBSS4540Z PBSS302ND Table 10 MJD148 <12NC> Application note © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 06 January 2006 6 of 20 AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors original type replacement SOT54 SOT223 SOT457 SOT23 cross ref. data MJD200 PBSS4540Z Table 9 MJD210 PBSS5540Z Table 17 MJD31 PBSS4350S PBSS4350Z PBSS4350D Table 6 MJD32 PBSS5350S PBSS5350Z PBSS5350D Table 14 TIP29 PBSS8110S PBSS8110Z PBSS8110D PBSS8110T Table 4 TIP29A PBSS8110S PBSS8110Z PBSS8110D PBSS8110T Table 4 TIP29B PBSS8110S PBSS8110Z PBSS8110D PBSS8110T Table 4 TIP29C PBSS8110S PBSS8110Z PBSS8110D PBSS8110T Table 4 TIP30 PBSS9110S PBSS9110Z PBSS9110D PBSS9110T Table 12 TIP30A PBSS9110S PBSS9110Z PBSS9110D PBSS9110T Table 12 TIP30B PBSS9110S PBSS9110Z PBSS9110D PBSS9110T Table 12 TIP30C PBSS9110S PBSS9110Z PBSS9110D PBSS9110T Table 12 TIP31 PBSS4350S PBSS4350Z PBSS4350D Table 6 TIP32 PBSS5350S PBSS5350Z PBSS5350D Table 14 <12NC> Application note © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 06 January 2006 7 of 20 AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors 6. Basic cross reference data, NPN transistors Table 3: original type leaded SMD type BC635 BC637 BC639 BCP54 BCP55 BCP56 package SOT54 SOT223 Ptot 830 mW 1000 mW VCEO 45 / 60 / 80 V 100 V IC 1A 1A VCEsat(max) 500 mV @ IC = 0,5 A, IB = 50 mA 120 mV @ IC = 0,5 A, IB = 50 mA hFE(min) 63 @ IC = 0,15 A, VCE = 2 V 150 @ IC = 0,25 A, VCE = 10 V 40 @ IC = 0,5 A, VCE = 2 V 100 *) BCX54 BCX55 BCX56 SOT89 *) 850 mW *) replacement leaded SMD PBSS8110S PBSS8110D SOT54 SOT457 830 mW 600 mW Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm PBSS8110T SOT23 *) 480 mW *) @ IC = 0,5 A, VCE = 10 V 2 Table 4: type package original type leaded replacement leaded SMD TIP29 TIP29A TIP29B TIP29C PBSS8110S PBSS8110Z PBSS8110T TO-220AB SOT54 SOT223 SOT23 Ptot 2000 mW 830 mW VCEO 40 / 60 / 80 / 100 V 100 V IC 1A 1A VCEsat(max) 700 mV @ IC = 1 A, IB = 125 mA 200 mV @ IC = 1 A, IB = 100 mA hFE(min) 40 @ IC = 0,2 A, VCE = 4 V 150 @ IC = 0,25 A, VCE = 10 V 15 @ IC = 1 A, VCE = 4 V 80 *) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm <12NC> Application note 1000 mW *) 480 mW *) @ IC = 1 A, VCE = 10 V 2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 06 January 2006 8 of 20 AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors Table 5: original type leaded replacement leaded SMD type BD135 BD137 BD139 PBSS4350S PBSS4350Z PBSS4350D package SOT32 (TO-126) SOT54 SOT223 SOT457 Ptot 1250 mW 830 mW VCEO 45 / 60 / 80 V 50 V IC 1,5 A 3A VCEsat(max) 500 mV @ IC = 0,5 A, IB = 50 mA 90 mV hFE(min) 25 @ IC = 0,5 A, VCE = 2 V 200 *) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 1350 mW *) 600 mW *) @ IC = 0,5 A, IB = 50 mA @ IC = 0,5 A, VCE = 2 V 2 Table 6: original type leaded SMD replacement leaded SMD PBSS4350S PBSS4350Z PBSS4350D SOT457 type TIP31 MJD31 KSH31 package TO-220 TO-252 DPAK SOT54 SOT223 Ptot 2000 mW 1560 mW 830 mW 1350 mW VCEO 40 V 50 V IC 3A 3A VCEsat(max) 1200 mV @ IC = 3 A, IB = 375 mA 290 mV @ IC = 2 A, IB = 200 mA hFE(min) 25 @ IC = 1 A, VCE = 4 V 200 @ IC = 1 A, VCE = 2 V 10 @ IC = 3 A, VCE = 4 V 100 *) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm <12NC> Application note *) 600 mW *) @ IC = 2 A, VCE = 2 V 2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 06 January 2006 9 of 20 AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors Table 7: original type leaded replacement leaded SMD type BD131 PBSS4350S PBSS4350Z PBSS4350D package SOT32 (TO-126) SOT54 SOT223 SOT457 830 mW 1350 mW Ptot *) 600 mW VCEO 45 V 50 V IC 3A 3A VCEsat(max) 300 mV @ IC = 0,5 A, IB = 50 mA 90 mV @ IC = 0,5 A, IB = 50 mA 700 mV @ IC = 2 A, IB = 200 mA 290 mV @ IC = 2 A, IB = 200 mA 40 @ IC = 0,5 A, VCE = 12 V 200 @ IC = 0,5 A, VCE = 2 V 20 @ IC = 2 A, VCE = 1 V 100 @ IC = 2 A, VCE = 2 V hFE(min) *) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm *) 2 Table 8: original type leaded replacement leaded SMD type BD329 PBSS4350S PBSS4350Z PBSS4350D package SOT32 (TO-126) SOT54 SOT223 SOT457 830 mW 1350 mW Ptot *) 600 mW VCEO 20 V 50 V IC 3A 3A VCEsat(max) 500 mV @ IC = 2 A, IB = 200 mA 290 mV @ IC = 2 A, IB = 200 mA hFE(min) 85 @ IC = 0,5 A, VCE = 1 V 200 @ IC = 0,5 A, VCE = 2 V 40 @ IC = 2 A, VCE = 1 V 100 *) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm <12NC> Application note *) @ IC = 2 A, VCE = 2 V 2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 06 January 2006 10 of 20 AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors Table 9: original type SMD replacement SMD type MJD200 KSH200 PBSS4540Z package TO-252 DPAK SOT223 Ptot 1400 mW 1350 mW VCEO 25 V 40 V IC 5A 5A VCEsat(max) 300 mV @ IC = 0,5 A, IB = 50 mA 90 mV @ IC = 0,5 A, IB = 50 mA 750 mV @ IC = 2 A, IB = 200 mA 150 mV @ IC = 2 A, IB = 200 mA 1800 mV @ IC = 5 A, IB = 1000 mA 355 mV @ IC = 5 A, IB = 500 mA 70 @ IC = 0,5 A, VCE = 1 V 300 @ IC = 0,5 A, VCE = 2 V 45 @ IC = 2 A, VCE = 1 V 250 @ IC = 2 A, VCE = 2 V 10 @ IC = 5 A, VCE = 2 V 100 hFE(min) *) *) @ IC = 5 A, VCE = 2 V Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 Table 10: original type leaded type BD433 BD435 MJD148 package TO-126 Ptot replacement SMD SMD PBSS4540Z PBSS302ND TO-252 DPAK SOT223 SOT457 1750 mW 1350 mW *) 600 mW *) VCEO 22 / 32 V 45 V 40 V 40 V IC 4A 4A 5A 4A VCEsat(max) 500 mV @ IC = 2 A, IB = 200 mA 150 mV 180 mV hFE(min) 85 @ IC = 0,5 A, VCE = 1 V 300 300 @ IC = 0,5 A, VCE = 2 V 50 @ IC = 2 A, VCE = 1 V 250 250 @ IC = 2 A, VCE = 2 V *) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm <12NC> Application note @ IC = 2 A, IB = 200 mA 2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 06 January 2006 11 of 20 AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors 7. Basic cross reference data, PNP transistors Table 11: original type leaded SMD BC636 BC638 BC640 BCP51 BCP52 BCP53 package SOT54 SOT223 Ptot 830 mW 1000 mW VCEO 45 / 60 / 80 V 100 V IC 1A 1A VCEsat(max) 500 mV @ IC = 0,5 A, IB = 50 mA 120 mV @ IC = 0,5 A, IB = 50 mA hFE(min) 63 @ IC = 0,15 A, VCE = 2 V 150 @ IC = 0,25 A, VCE = 5 V 40 @ IC = 0,5 A, VCE = 2 V 100 type *) BCX51 BCX52 BCX53 SOT89 *) 850 mW *) replacement leaded SMD PBSS9110S PBSS9110D SOT54 SOT457 830 mW 550 mW Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm PBSS9110T SOT23 *) 480 mW *) @ IC = 0,5 A, VCE = 5 V 2 Table 12: type package original type leaded replacement leaded SMD TIP30 TIP30A TIP30B TIP30C PBSS9110S PBSS9110Z PBSS9110T TO-220AB SOT54 SOT223 SOT23 Ptot 2000 mW 830 mW VCEO 40 / 60 / 80 / 100 V 100 V IC 1A VCEsat(max) 700 mV @ IC = 1 A, IB = 125 mA 320 mV @ IC = 1 A, IB = 100 mA hFE(min) 40 @ IC = 0,2 A, VCE = 4 V 150 @ IC = 0,25 A, VCE = 5 V 15 @ IC = 1 A, VCE = 4 V 125 *) 480 mW *) 1A Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm <12NC> Application note 1000 mW *) @ IC = 1 A, VCE = 5 V 2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 06 January 2006 12 of 20 AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors Table 13: type original type leaded replacement leaded SMD BD136 BD138 BD140 PBSS5350S PBSS5350Z PBSS5350D SOT457 package SOT32 (TO-126) SOT54 SOT223 Ptot 1250 mW 830 mW 1350 mW VCEO 45 / 60 / 80 V 50 V IC 1,5 A 3A VCEsat(max) 500 mV @ IC = 0,5 A, IB = 50 mA 100 mV hFE(min) 25 @ IC = 0,5 A, VCE = 2 V 200 *) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm *) 600 mW *) @ IC = 0,5 A, IB = 50 mA @ IC = 0,5 A, VCE = 2 V 2 Table 14: original type leaded SMD replacement leaded SMD PBSS5350S PBSS5350Z PBSS5350D SOT457 type TIP32 MJD32 KSH32 package TO-220 TO-252 DPAK SOT54 SOT223 Ptot 2000 mW 1560 mW 830 mW 1350 mW VCEO 40 V 50 V IC 3A 3A VCEsat(max) 1200 mV @ IC = 3 A, IB = 375 mA 300 mV @ IC = 2 A, IB = 200 mA hFE(min) 25 @ IC = 1 A, VCE = 4 V 200 @ IC = 1 A, VCE = 2 V 10 @ IC = 3 A, VCE = 4 V 100 *) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm <12NC> Application note *) 600 mW *) @ IC = 2 A, VCE = 2 V 2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 06 January 2006 13 of 20 AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors Table 15: original type leaded replacement leaded SMD type BD132 PBSS5350S PBSS5350Z PBSS5350D package SOT32 (TO-126) SOT54 SOT223 SOT457 830 mW 1350 mW Ptot *) 600 mW VCEO 45 V 50 V IC 3A 3A VCEsat(max) 300 mV @ IC = 0,5 A, IB = 50 mA 100 mV @ IC = 0,5 A, IB = 50 mA 700 mV @ IC = 2 A, IB = 200 mA 300 mV @ IC = 2 A, IB = 200 mA 40 @ IC = 0,5 A, VCE = 12 V 200 @ IC = 0,5 A, VCE = 2 V 20 @ IC = 2 A, VCE = 1 V 100 hFE(min) *) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm *) @ IC = 2 A, VCE = 2 V 2 Table 16: original type leaded replacement leaded SMD type BD330 PBSS5350S PBSS5350Z PBSS5350D package SOT32 (TO-126) SOT54 SOT223 SOT457 830 mW 1350 mW Ptot *) 600 mW VCEO 20 V 50 V IC 3A 3A VCEsat(max) 500 mV @ IC = 2 A, IB = 200 mA 300 mV @ IC = 2 A, IB = 200 mA hFE(min) 85 @ IC = 0,5 A, VCE = 1 V 200 @ IC = 0,5 A, VCE = 2 V 40 @ IC = 2 A, VCE = 1 V 100 *) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm <12NC> Application note *) @ IC = 2 A, VCE = 2 V 2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 06 January 2006 14 of 20 AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors Table 17: original type SMD replacement SMD type MJD210 KSH210 PBSS5540Z package TO-252 DPAK SOT223 Ptot 1400 mW 1350 mW VCEO 25 V 40 V IC 5A VCEsat(max) 300 mV @ IC = 0,5 A, IB = 50 mA 120 mV @ IC = 0,5 A, IB = 50 mA 750 mV @ IC = 2 A, IB = 200 mA 160 mV @ IC = 2 A, IB = 200 mA 1800 mV @ IC = 5 A, IB = 1000 mA 375 mV @ IC = 5 A, IB = 500 mA 70 @ IC = 0,5 A, VCE = 1 V 250 @ IC = 0,5 A, VCE = 2 V 45 @ IC = 2 A, VCE = 1 V 150 @ IC = 2 A, VCE = 2 V 10 @ IC = 5 A, VCE = 2 V 50 hFE(min) *) *) 5A @ IC = 5 A, VCE = 2 V Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 Table 18: original type SMD replacement SMD type BD434 BD436 PBSS5540Z PBSS302PD package TO-126 SOT223 SOT457 Ptot 1350 mW *) 600 mW VCEO 22 / 32 V IC 4A 5A 4A VCEsat(max) 500 mV @ IC = 2 A, IB = 200 mA 160 mV 180 mV @ IC = 2 A, IB = 200 mA hFE(min) 85 @ IC = 0,5 A, VCE = 1 V 250 200 @ IC = 0,5 A, VCE = 2 V 50 @ IC = 2 A, VCE = 1 V 150 175 @ IC = 2 A, VCE = 2 V *) 40 V *) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm <12NC> Application note 40 V 2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 06 January 2006 15 of 20 AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors 8. Basic data on the BISS transistors Table 19: 1 A / 100 V NPN BISS transistors leaded SMD type PBSS8110S PBSS8110D PBSS8110T package SOT54 SOT457 SOT23 Ptot 830 mW 600 mW VCEO 100 V IC 1A VCEsat(max) 120 mV @ IC = 0,5 A, IB = 50 mA 200 mV @ IC = 1 A, IB = 100 mA 150 @ IC = 0,25 A, VCE = 10 V 100 @ IC = 0,5 A, VCE = 10 V 80 @ IC = 1 A, VCE = 10 V hFE(min) *) *) 480 mW *) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 Table 20: 3 A / 50 V NPN BISS transistors leaded SMD type PBSS4350S PBSS4350Z PBSS4350D package SOT54 SOT223 SOT457 Ptot 830 mW 1350 mW VCEO 50 V IC 3A VCEsat(max) 90 mV @ IC = 0,5 A, IB = 50 mA 290 mV @ IC = 2 A, IB = 200 mA 200 @ IC = 0,5 A, VCE = 2 V 200 @ IC = 1 A, VCE = 2 V 100 @ IC = 2 A, VCE = 2 V hFE(min) *) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm <12NC> Application note *) 2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 06 January 2006 16 of 20 AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors Table 21: 4 – 5 A / 40 V NPN BISS transistors SMD type PBSS4540Z PBSS302ND package SOT223 SOT457 *) Ptot 1350 mW VCEO 40 V 40 V IC 5A 4A VCEsat(max) 90 mV hFE(min) 600 mW *) IC = 0,5 A, IB = 50 mA 150 mV 180 mV IC = 2 A, IB = 200 mA 355 mV - IC = 5 A, IB = 500 mA 300 300 IC = 0,5 A, VCE = 2 V 250 250 IC = 2 A, VCE = 2 V 100 - IC = 5 A, VCE = 2 V Table 22: 1 A / 100 V PNP BISS transistors leaded SMD type PBSS9110S PBSS9110D PBSS9110T package SOT54 SOT457 SOT23 Ptot 830 mW VCEO 100 V IC 1A VCEsat(max) 120 mV @ IC = 0,5 A, IB = 50 mA 320 mV @ IC = 1 A, IB = 100 mA 150 @ IC = 0,25 A, VCE = 5 V 150 @ IC = 0,5 A, VCE = 5 V 125 @ IC = 1 A, VCE = 5 V hFE(min) *) 550 mW 480 mW *) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm <12NC> Application note *) 2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 06 January 2006 17 of 20 AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors Table 23: 3 A / 50 V PNP BISS transistors leaded SMD type PBSS5350S PBSS5350Z PBSS5350D package SOT54 SOT223 SOT457 Ptot 830 mW 1350 mW VCEO 50 V IC 3A VCEsat(max) 100 mV @ IC = 0,5 A, IB = 50 mA mV @ IC = 2 A, IB = 200 mA 200 @ IC = 0,5 A, VCE = 2 V 200 @ IC = 1 A, VCE = 2 V 100 @ IC = 2 A, VCE = 2 V hFE(min) *) *) Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 Table 24: 4 – 5 A / 40 V PNP BISS transistors SMD type PBSS5540Z PBSS302PD package SOT223 SOT457 *) 1350 mW VCEO 40 V 40 V IC 5A 4A VCEsat(max) 120 mV 60 mV @ IC = 0,5 A, IB = 50 mA 160 mV 180 mV @ IC = 2 A, IB = 200 mA 375 mV - @ IC = 5 A, IB = 500 mA 250 200 @ IC = 0,5 A, VCE = 2 V 150 175 @ IC = 2 A, VCE = 2 V 50 - @ IC = 5 A, VCE = 2 V hFE(min) 600 mW <12NC> Application note *) Ptot © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 06 January 2006 18 of 20 AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors 9. Disclaimers are free from patent, copyright, or mask work right infringement, unless otherwise specified. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products 10. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. <12NC> Application note © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01.00 — 06 January 2006 19 of 20 AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors 11. Contents 1. Introduction .........................................................3 2. Reduced power dissipation due to low saturation voltage ...............................................3 3. Common replacements.......................................4 4. General selection process..................................5 5. Cross reference table for common replacements.......................................................6 6. Basic cross reference data, NPN transistors....8 7. Basic cross reference data, PNP transistors ..12 8. Basic data on the BISS transistors..................16 9. Disclaimers ........................................................19 10. Contents.............................................................20 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release:06 January 2006 Document number: <12NC> Published in The Netherlands