DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS5350D PNP transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification PNP transistor PBSS5350D PINNING FEATURES • High current capabilities PIN • Low VCEsat. DESCRIPTION 1 collector 2 collector APPLICATIONS 3 base • Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers 4 emitter 5 collector 6 collector • VCEsat critical applications such as the latest low supply voltage IC applications • All battery driven equipment to save battery power. handbook, halfpage 6 5 4 1, 2, 5, 6 DESCRIPTION 3 PNP low VCEsat transistor in a SC-74 plastic package. NPN complement: PBSS4350D. 4 1 MARKING CODE TYPE NUMBER PBSS5350D 2 Top view MARKING CODE Fig.1 3 MAM435 Simplified outline (SOT457) and symbol. 53 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −60 V VCEO collector-emitter voltage open base − −50 V VEBO emitter-base voltage open collector − −6 V IC collector current (DC) − −3 A ICM peak collector current − −5 A IBM peak base current − −1 A Ptot total power dissipation note 1 − 600 mW note 2 − 750 mW Tamb ≤ 25 °C Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C Notes 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. 2000 Mar 08 2 Philips Semiconductors Product specification PNP transistor PBSS5350D THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT note 1 208 K/W note 2 160 K/W in free air; Notes 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IE = 0; VCB = −50 V MIN. − MAX. −100 UNIT ICBO collector cut-off current IE = 0; VCB = −50 V; Tj = 150 °C − −50 µA IEBO emitter cut-off current IC = 0; VEB = −5 V − −100 nA hFE DC current gain VCE = −2 V; IC = −500 mA 200 − IC = −1 A; note 1 200 − IC = −2 A; note 1 100 − VCEsat collector-emitter saturation voltage nA IC = −500 mA; IB = −50 mA − −100 mV IC = −1 A; IB = −50 mA − −180 mV IC = −2 A; IB = −200 mA; note 1 − −300 mV VBEsat base-emitter saturation voltage IC = −2 A; IB = −200 mA; note 1 − −1.2 V VBEon base-emitter turn-on voltage IC = −1 A; VCE = −2 V; note 1 − −1.1 V Cc collector capacitance IE = Ie = 0; VCB = −10 V; f = 1 MHz − 40 pF fT transition frequency IC = −100 mA; VCE = −5 V; f = 100 MHz 100 − MHz Note 1. Pulse test tp ≤ 300 µs, δ ≤ 0.02. 2000 Mar 08 3 Philips Semiconductors Product specification PNP transistor PBSS5350D MCD921 1000 MCD922 −1.2 handbook, halfpage handbook, halfpage hFE VBE (V) 800 (1) −0.8 (1) (2) 600 400 (3) (2) −0.4 (3) 200 0 −10−1 −1 −10 −102 0 −10−1 −103 −104 IC (mA) −1 VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.2 Fig.3 DC current gain as a function of collector current. MCD923 −1 handbook, halfpage −10 −102 −103 −104 IC (mA) Base-emitter voltage as a function of collector current. MCD924 −1.5 handbook, halfpage VCEsat VBEsat (V) (V) −10−1 −1 (1) (2) (2) −10−2 (1) −0.5 (3) −10−3 −10−1 −1 −10 −102 −103 (3) 0 −10−1 −104 IC (mA) −1 IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current. 2000 Mar 08 4 −10 −102 −103 −104 IC (mA) Base-emitter saturation voltage as a function of collector current. Philips Semiconductors Product specification PNP transistor PBSS5350D MCD925 −1 handbook, halfpage IC (A) (1) IC (A) (2) (3) −0.8 MCD926 −5 handbook, halfpage (1) −4 (4) (3) (4) (5) (6) (7) (5) (8) (6) −0.6 (2) (9) −3 (7) (10) (8) −0.4 −2 (9) (10) −0.2 −1 (11) (12) 0 −0.4 0 −0.8 −1.2 0 −1.6 −2 VCE (V) −0.4 0 −0.8 −1.2 −1.6 −2 VCE (V) Tamb = 25 °C. IB = −3.96 mA. IB = −3.63 mA. IB = −3.3 mA. IB = −2.97 mA. IB = −2.64 mA. (6) IB = −2.31 mA. (1) (2) (3) (4) (5) Fig.6 (7) IB = −1.98 mA. Tamb = 25 °C. (8) IB = −1.65 mA. (9) IB = −1.32 mA. (10) IB = −990 µA. (11) IB = −660 µA. (12) IB = −330 µA. (1) IB = −250 mA. (2) IB = −225 mA. (3) IB = −200 mA. (4) IB = −175 mA. (5) IB = −150 mA. Collector current as a function of base current and collector-emitter voltage. 2000 Mar 08 Fig.7 5 (6) IB = −125 mA. (7) IB = −100 mA. (8) IB = −75 mA. (9) IB = −50 mA. (10) IB = −25 mA. Collector current as a function of base current and collector-emitter voltage. Philips Semiconductors Product specification PNP transistor PBSS5350D PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 1 2 bp e c 3 Lp w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 2000 Mar 08 REFERENCES IEC JEDEC EIAJ SC-74 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification PNP transistor PBSS5350D DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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