Datasheet

AOL1448
30V N-Channel MOSFET
General Description
Product Summary
The AOL1448 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and
general purpose applications.
ID (at VGS=10V)
VDS
30V
36A
RDS(ON) (at VGS=10V)
< 9.5mΩ
RDS(ON) (at VGS = 4.5V)
< 14mΩ
100% UIS Tested
100% Rg Tested
Top View
D
UltraSO-8TM
Bottom View
D
G
S
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
V
A
90
11
IDSM
TA=70°C
±20
28
IDM
TA=25°C
Units
V
36
ID
TC=100°C
Maximum
30
A
9
Avalanche Current C
IAS, IAR
20
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
20
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 4: Nov 2011
2
Steady-State
Steady-State
RθJA
RθJC
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W
1.3
TJ, TSTG
Symbol
t ≤ 10s
W
15
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
30
PD
TC=100°C
-55 to 175
Typ
20
48
3.5
°C
Max
25
60
5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOL1448
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
90
TJ=55°C
±100
nA
1.7
2.2
V
7.5
9.5
11.5
14
VGS=4.5V, ID=20A
11
14
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
43
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
VGS=10V, ID=20A
Output Capacitance
Units
V
1
Zero Gate Voltage Drain Current
Coss
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=15V, f=1MHz
mΩ
mΩ
S
1
V
30
A
770
pF
240
pF
77
pF
0.8
1.6
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
14.8
18
nC
Qg(4.5V) Total Gate Charge
7.1
9
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
0.4
2.2
nC
3.1
nC
5
ns
3
ns
18
ns
tf
Turn-Off Fall Time
3
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
11
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
23
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: Nov 2011
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AOL1448
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
60
6V
10V
VDS=5V
50
80
4.5V
7V
40
60
ID(A)
ID (A)
4V
30
40
20
3.5V
20
125°C
25°C
10
VGS=3V
0
0
0
1
2
3
4
0
5
16
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
2
3
4
5
2
14
VGS=4.5V
12
10
8
VGS=10V
6
1.8
VGS=10V
ID=20A
1.6
17
5
2
10
=4.5V
1.4
1.2
VGS
ID=20A
1
0.8
4
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+02
35
ID=20A
30
1.0E+01
40
1.0E+00
20
IS (A)
25
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
125°C
15
1.0E-02
10
1.0E-03
25°C
1.0E-04
25°C
5
125°C
1.0E-01
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 4: Nov 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOL1448
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=15V
ID=20A
1000
Capacitance (pF)
VGS (Volts)
8
6
4
2
600
Coss
400
200
0
Crss
0
0
4
8
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
16
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000.0
RDS(ON)
10µs
100µs
10.0
1ms
10ms
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
Power (W)
10µs
100.0
ID (Amps)
Ciss
800
160
TJ(Max)=175°C
TC=25°C
120
17
5
2
10
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=5°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 4: Nov 2011
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Page 4 of 6
AOL1448
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
TA=25°C
TA=150°C
TA=100°C
TA=125°C
10
30
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100
25
20
15
10
5
1
0
1
10
100
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
40
10000
30
1000
25
50
75
100
125
150
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
175
Power (W)
Current rating ID(A)
TA=25°C
20
17
5
2
10
100
10
10
1
0
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
175
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 4: Nov 2011
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Page 5 of 6
AOL1448
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 4: Nov 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6