SHENZHENFREESCALE AOL1458

AOL1458
30V N-Channel MOSFET
The AOL1458 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge and low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
VDS
30V
46A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 5.6mΩ
RDS(ON) (at VGS = 4.5V)
< 9.5mΩ
UltraSO-8TM
D
D
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current G
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
A
14
A
11
Avalanche Current C
IAS, IAR
35
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
61
mJ
Power Dissipation B
Junction and Storage Temperature Range
2
Steady-State
Steady-State
RθJA
RθJC
W
1.2
TJ, TSTG
Symbol
t ≤ 10s
W
21
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
43
PD
TC=100°C
TA=25°C
Power Dissipation A
1/7
V
300
IDSM
TA=70°C
±20
36
IDM
TA=25°C
Units
V
46
ID
TC=100°C
Maximum
30
-55 to 175
Typ
24
53
2.4
°C
Max
30
64
3.5
Units
°C/W
°C/W
°C/W
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Conditions
Min
ID=250µA, VGS=0V
Typ
Max
30
V
VDS=30V, VGS=0V
100
TJ=55°C
500
VDS=0V, VGS= ±20V
100
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.6
ID(ON)
On state drain current
VGS=10V, VDS=5V
300
VGS=10V, ID=20A
Units
2.1
3
µA
nA
V
A
4.6
5.6
7.1
8.5
VGS=4.5V, ID=10A
7.5
9.5
mΩ
VDS=5V, ID=20A
50
1
V
50
A
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
mΩ
S
1630
2037
2440
pF
260
375
490
pF
130
220
300
pF
0.5
1.1
1.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
28
35
42
nC
Qg(4.5V) Total Gate Charge
13
16
20
nC
9
8.6
10
nC
4.6
6.4
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
2.8
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
8
10
12
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
12
15
18
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
8.8
ns
26
ns
23
ns
6
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/7
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
5V
10V
VDS=5V
6V
4.5V
80
80
7V
60
ID(A)
ID (A)
60
4V
40
40
VGS=3.5V
125°C
20
20
25°C
0
0
0
1
2
3
4
0
5
15
Normalized On-Resistance
RDS(ON) (mΩ )
3
4
5
6
2
12
VGS=4.5V
9
6
3
VGS=10V
1.8
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=4.5V
ID=20A
1
17
5
2
10
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
20
1.0E+02
ID=20A
1.0E+01
40
15
1.0E+00
IS (A)
RDS(ON) (mΩ )
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
125°C
10
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
5
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/7
1
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
VDS=15V
ID=20A
2500
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
2000
1500
1000
Coss
500
0
Crss
0
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
35
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
2000
1000.0
10µs
ID (Amps)
RDS(ON)
limited
10.0
100µs
1ms
DC
10ms
1.0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
Zθ JC Normalized Transient
Thermal Resistance
1
17
5
2
10
1000
500
1
VDS (Volts)
10
100
0
0.0001 0.001
0.01
0.1
1
10
0
100
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
TJ(Max)=175°C
TC=25°C
1500
Power (W)
10µs
100.0
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3.5°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/7
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
IAR (A) Peak Avalanche Current
50
Power Dissipation (W)
TA=25°C
TA=100°C
TA=150°C
30
20
10
TA=125°C
10
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note F)
50
10000
40
1000
TA=25°C
Power (W)
Current rating ID(A)
40
30
20
17
5
2
10
100
10
10
1
0.00001
0
0
25
50
75
100
125
150
0.001
0.1
10
TCASE (°C)
Figure 14: Current De-rating (Note F)
1000
0
18
175
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=64°C/W
40
0.1
PD
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/7
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
12
di/dt=800A/µs
125ºC
2
25ºC
0
15
20
25
30
5
10
15
20
30
35
15
2.5
Is=20A
125ºC
8
12
2
125ºC
6
10
125ºC
4
trr (ns)
25ºC
Irm (A)
trr
Qrr
25
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
10
15
Qrr (nC)
0.5
0
0
IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Is=20A
25ºC
0
35
20
1
9
1.5
S
10
125ºC
S
2
0
5
1.5
25ºC
4
5
0
trr
8
6
4
Irm
2
125ºC
10
trr (ns)
6
25ºC
10
2.5
S
8
Qrr
15
di/dt=800A/µs
12
125ºC
20
Qrr (nC)
14
10
Irm (A)
25
3
16
25ºC
6
1
125º
S
5
25ºC
2
3
0
1000
0
25ºC
0.5
Irm
0
0
200
400
600
800
di/dt (A/µ
µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
6/7
0
200
400
600
800
0
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
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Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
7/7
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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