AOL1458 30V N-Channel MOSFET The AOL1458 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 30V 46A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 5.6mΩ RDS(ON) (at VGS = 4.5V) < 9.5mΩ UltraSO-8TM D D G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25°C Pulsed Drain Current C Continuous Drain Current A 14 A 11 Avalanche Current C IAS, IAR 35 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 61 mJ Power Dissipation B Junction and Storage Temperature Range 2 Steady-State Steady-State RθJA RθJC W 1.2 TJ, TSTG Symbol t ≤ 10s W 21 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 43 PD TC=100°C TA=25°C Power Dissipation A 1/7 V 300 IDSM TA=70°C ±20 36 IDM TA=25°C Units V 46 ID TC=100°C Maximum 30 -55 to 175 Typ 24 53 2.4 °C Max 30 64 3.5 Units °C/W °C/W °C/W www.freescale.net.cn Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=250µA, VGS=0V Typ Max 30 V VDS=30V, VGS=0V 100 TJ=55°C 500 VDS=0V, VGS= ±20V 100 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.6 ID(ON) On state drain current VGS=10V, VDS=5V 300 VGS=10V, ID=20A Units 2.1 3 µA nA V A 4.6 5.6 7.1 8.5 VGS=4.5V, ID=10A 7.5 9.5 mΩ VDS=5V, ID=20A 50 1 V 50 A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance mΩ S 1630 2037 2440 pF 260 375 490 pF 130 220 300 pF 0.5 1.1 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 28 35 42 nC Qg(4.5V) Total Gate Charge 13 16 20 nC 9 8.6 10 nC 4.6 6.4 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A Qgd Gate Drain Charge tD(on) Turn-On DelayTime 2.8 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 8 10 12 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 12 15 18 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 8.8 ns 26 ns 23 ns 6 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/7 www.freescale.net.cn TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 5V 10V VDS=5V 6V 4.5V 80 80 7V 60 ID(A) ID (A) 60 4V 40 40 VGS=3.5V 125°C 20 20 25°C 0 0 0 1 2 3 4 0 5 15 Normalized On-Resistance RDS(ON) (mΩ ) 3 4 5 6 2 12 VGS=4.5V 9 6 3 VGS=10V 1.8 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 17 5 2 10 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 20 1.0E+02 ID=20A 1.0E+01 40 15 1.0E+00 IS (A) RDS(ON) (mΩ ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 125°C 10 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 5 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/7 1 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=15V ID=20A 2500 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 2000 1500 1000 Coss 500 0 Crss 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 0 35 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 2000 1000.0 10µs ID (Amps) RDS(ON) limited 10.0 100µs 1ms DC 10ms 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 Zθ JC Normalized Transient Thermal Resistance 1 17 5 2 10 1000 500 1 VDS (Volts) 10 100 0 0.0001 0.001 0.01 0.1 1 10 0 100 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=175°C TC=25°C 1500 Power (W) 10µs 100.0 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3.5°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/7 www.freescale.net.cn TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 IAR (A) Peak Avalanche Current 50 Power Dissipation (W) TA=25°C TA=100°C TA=150°C 30 20 10 TA=125°C 10 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) 50 10000 40 1000 TA=25°C Power (W) Current rating ID(A) 40 30 20 17 5 2 10 100 10 10 1 0.00001 0 0 25 50 75 100 125 150 0.001 0.1 10 TCASE (°C) Figure 14: Current De-rating (Note F) 1000 0 18 175 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=64°C/W 40 0.1 PD 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/7 www.freescale.net.cn TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 12 di/dt=800A/µs 125ºC 2 25ºC 0 15 20 25 30 5 10 15 20 30 35 15 2.5 Is=20A 125ºC 8 12 2 125ºC 6 10 125ºC 4 trr (ns) 25ºC Irm (A) trr Qrr 25 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 10 15 Qrr (nC) 0.5 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current Is=20A 25ºC 0 35 20 1 9 1.5 S 10 125ºC S 2 0 5 1.5 25ºC 4 5 0 trr 8 6 4 Irm 2 125ºC 10 trr (ns) 6 25ºC 10 2.5 S 8 Qrr 15 di/dt=800A/µs 12 125ºC 20 Qrr (nC) 14 10 Irm (A) 25 3 16 25ºC 6 1 125º S 5 25ºC 2 3 0 1000 0 25ºC 0.5 Irm 0 0 200 400 600 800 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt 6/7 0 200 400 600 800 0 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.freescale.net.cn Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 7/7 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn