Datasheet

AON3419
30V P-Channel MOSFET
General Description
Product Summary
The AON3419 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=-10V)
-30V
-10A
RDS(ON) (at VGS=-10V)
< 19mΩ
RDS(ON) (at VGS =-4.5V)
< 32mΩ
VDS
D
Top View
1
8
2
7
3
6
4
5
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev.1.0: May 2013
Steady-State
Steady-State
A
3.1
W
2
TJ, TSTG
Symbol
t ≤ 10s
V
-45
PD
TC=70°C
±20
-7.8
IDM
TC=25°C
Power Dissipation B
Units
V
-10
ID
TC=70°C
Maximum
-30
RθJA
RθJL
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-55 to 150
Typ
30
65
30
°C
Max
40
80
40
Units
°C/W
°C/W
°C/W
Page 1 of 5
AON3419
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-45
nA
-2.5
V
15.5
19
22.5
27
VGS=-4.5V, ID=-7A
25
32
27
TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-10A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
±100
Static Drain-Source On-Resistance
Output Capacitance
Units
-2.0
VGS=-10V, ID=-10A
Coss
Max
V
VDS=-30V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=0V, VDS=-15V, f=1MHz
A
-0.75
mΩ
S
-1
V
-4
A
1040
pF
180
pF
125
VGS=0V, VDS=0V, f=1MHz
mΩ
4
pF
Ω
8
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
19
30
nC
Qg(4.5V)
Total Gate Charge
9.6
20
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=-10V, VDS=-15V, ID=-10A
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=-10A, dI/dt=500A/µs
3.5
nC
4.5
nC
10
ns
VGS=-10V, VDS=-15V, RL=1.5Ω,
RGEN=3Ω
5.5
ns
26
ns
9
ns
IF=-10A, dI/dt=500A/µs
11.5
ns
nC
25
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: May 2013
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Page 2 of 5
AON3419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
-10V
-5V
-7V
VDS=-5V
40
-4.5V
30
-ID(A)
-ID (A)
30
20
20
125°C
-3.5V
10
10
25°C
VGS=-3V
0
0
0
1
2
3
4
1
5
3
4
5
6
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
35
Normalized On-Resistance
1.6
30
VGS=-4.5V
RDS(ON) (mΩ
Ω)
2
25
20
15
VGS=-10V
VGS=-10V
1.4
1.2
VGS=-4.5V
ID=-7A
1
0.8
10
0
0
5
10
15
20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
60
ID=-10A
1.0E+01
-IS (A)
50
RDS(ON) (mΩ
Ω)
40
125°C
40
1.0E+00
125°C
1.0E-01
30
25°C
1.0E-02
20
1.0E-03
10
25°C
1.0E-04
0
2
4
6
8
10
1.0E-05
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: May 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AON3419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
VDS=-10V
ID=-10A
1600
1400
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
1200
1000
800
600
400
2
Coss
200
0
Crss
0
0
5
10
15
20
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
150
100.0
RDS(ON)
limited
10µs
10.0
10µs
100µs
1.0
1ms
TJ(Max)=150°C
TC=25°C
1
17
5
2
10
90
60
30
10ms
0.1
0.1
TJ(Max)=150°C
TC=25°C
120
Power (W)
-ID (Amps)
10
10 DC
100
0
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
-VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
(Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
40
RθJA=80°C/W
0.1
PD
Single Pulse
0.01
Ton
0.001
1E-05
0.0001
0.001
0.01
0.1
1
T
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: May 2013
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Page 4 of 5
AON3419
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.1.0: May 2013
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5