Datasheet

UNISONIC TECHNOLOGIES CO., LTD
15N70
Preliminary
Power MOSFET
15A, 700V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 15N70 is an N-Channel enhancement MOSFET, it uses
UTC’s advanced technology to provide customers with a minimum
on-state resistance, high switching speed and low gate charge. It
can also withstand high energy pulse in the avalanche and
commutation modes.
The UTC 15N70 is suitable for high efficiency switching DC/DC
converter, motor control and switch mode power supply.
„
FEATURES
* RDS(ON)=0.43Ω @VGS=10V,ID=7.5A
* Low gate charge ( Typ=70nC )
* Low CRSS ( Typ=27pF )
* High switching speed
„
SYMBOL
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
15N70L-T3P-T
15N70G-T3P-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-3P
1
G
Pin Assignment
2
3
D
S
Packing
Tube
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QW-R502-839.a
15N70
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25°C
TC=100°C
Pulsed (Note 2)
Continuous
Avalanche Current (Note 2)
ID
IDM
IAR
EAS
EAR
dv/dt
RATINGS
700
±30
15
9.5
60
15
950
30
4.5
300
2.38
-55~+150
-55~+150
UNIT
V
V
A
A
A
A
mJ
mJ
V/ns
W
W/°C
°C
°C
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation (TC=25°C)
PD
Derate above 25°C
Junction Temperature
TJ
Storage Temperature Range
TSTG
Maximum Lead Temperature for Soldering Purposes, 1/8”
TL
300
°C
from Case for 5 Seconds
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. L=7.8mH, IAS=15A, VDD=50V, RG=25Ω, Starting TJ=25°C,
4. ISD≤15A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤25°C.
Avalanche Energy
„
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
Case to Sink
SYMBOL
θJA
θJC
θCS
UNISONIC TECHNOLOGIES CO., LTD
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RATINGS
40
0.42
0.24
UNIT
°C/W
°C/W
°C/W
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Ver.a
15N70
„
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
ID=250µA, VGS=0V
700
IGSS
UNISONIC TECHNOLOGIES CO., LTD
V
0.68
VDS=700V, VGS=0V
VDS=560V, TC=125°C
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=7.5A
Forward Transconductance
gFS
VDS=50V, ID=7.5A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=560V, ID=15A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=350V, ID=15A, RG=25Ω
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=15A, VGS=0V
Body Diode Reverse Recovery Time
tRR
IS=15A, VGS=0V, dIF/dt=100A/µs
(Note1)
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width≤300µs, Duty cycle≤2%
2. Essentially independent of operating temperature
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MIN TYP MAX UNIT
△BVDSS/△TJ Reference to 25°C, ID=250µA
IDSS
Forward
Reverse
TEST CONDITIONS
3.0
V/°C
10
100
+100
-100
µA
µA
nA
nA
5.0
0.43 0.56
15
V
Ω
S
2790 3600 pF
300 390 pF
27
35
pF
70
17
33
70
180
160
120
90
150
370
330
250
15
60
1.4
460
5.7
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
RG
90%
RD
VGS
VDS
10V
10%
DUT
VGS
td(ON)
tON
Resistive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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tR
td(OFF) tF
tOFF
Resistive Switching Waveforms
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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15N70
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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