IXTH 15N70 VDSS MegaMOSTMFET ID (cont) RDS(on) = 700 V = 15 A = 0.45 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 700 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 700 V V GS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C 15 A I DM TC = 25°C, pulse width limited by TJM 60 A PD TC = 25°C 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain 1.13/10 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 6 g 300 °C Features ● ● ● ● ● Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Applications ● VDSS VGS = 0 V, ID = 250 µA 700 VGS(th) VDS = VGS, ID = 250 µA 2 I GSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V V 4.5 V ±100 nA 200 1 µA mA 0.45 Ω ● ● RDS(on) TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % ● ● ● IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages ● IXYS reserves the right to change limits, test conditions, and dimensions. International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High commutating dv/dt rating Fast switching times Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density 94503C(5/96) IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXTH 15N70 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = 0.5 ID25, pulse test 11 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 18 S 4500 pF 420 pF 140 pF 20 40 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 43 60 ns td(off) RG = 2 Ω, (External) 70 90 ns 40 60 ns 150 170 nC 29 40 nC 60 85 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Qgd RthJC 0.42 0.25 RthCK Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 15 A I SM Repetitive; pulse width limited by TJM 60 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 600 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ns TO-247 AD Outline 1 2 Terminals: 1 - Gate 3 - Source Dim. 3 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 2.87 3.12 b2 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC