Preliminary TSM2N70 700V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 7 @ VGS =10V 0.8 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Block Diagram Features ● ● ● ● Low RDS(ON) 7Ω (Max.) Low gate charge typical @ 11.4nC (Typ.) Low Crss typical @ 6.5pF (Typ.) Fast Switching Ordering Information Part No. Package Packing TO-252 TO-251 70pcs / Tube 2.5Kpcs / 13” Reel TSM2N70CH C5 TSM2N70CP RO N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 1.6 A Pulsed Drain Current * IDM 6.4 A Avalanche Current (Single) (Note 2) IAS 1.6 A EAS 110 mJ PD 45 W dv/dt 4.5 V/ns TJ 150 ºC TSTG -55 to +150 Single Pulse Avalanche Energy (Note 2) o Maximum Power Dissipation @TC = 25 C Peak Diode Recovery Voltage Slope (Note 2) Operating Junction Temperature Storage Temperature Range o C * Limited by maximum junction temperature 1/7 Version: Preliminary Preliminary TSM2N70 700V N-Channel Power MOSFET Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol Limit RӨJC 2.78 o C/W 100 o C/W RӨJA Unit Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 1mA BVDSS 700 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 0.8A RDS(ON) -- 6 7 Ω Gate Threshold Voltage VDS = VGS, ID = 50uA VGS(TH) 3.0 -- 4.5 V Zero Gate Voltage Drain Current VDS = 700V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±10 nA Forward Transconductance VDS = 15V, ID = 0.8A gfs -- 1.4 -- S Diode Forward Voltage IS = 1.6A, VGS = 0V VSD -- 1.6 -- V Qg -- 11.4 -- Qgs -- 2 -- Qgd -- 6.8 -- Ciss -- 280 -- Coss -- 35 -- Crss -- 6.5 -- td(on) -- 7 -- Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 560V, ID = 0.8A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 0.8A, Turn-Off Delay Time VDD = 350V, RG = 4.7Ω Turn-Off Fall Time tr -- 17 -- td(off) -- 20 -- tf -- 35 -- nS Reverse Recovery Time VGS = 0V, IS = 13A, tfr -- 334 -- nS Reverse Recovery Charge VDD = 50V Qfr -- 918 -- uC -- 5.5 -- A dIF/dt = 100A/us Reverse Recovery Current IRRM Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. VDD = 50V, IAS=13A, L=8mH, RG=25Ω 3. Pulse test: pulse width ≤300uS, duty cycle ≤1.5% 4. Essentially Independent of Operating Temperature 5. For design reference only, not subject to production testing. 6. Switching time is essentially independent of operating temperature. 2/7 Version: Preliminary Preliminary TSM2N70 700V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/7 Version: Preliminary Preliminary TSM2N70 700V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/7 Version: Preliminary Preliminary TSM2N70 700V N-Channel Power MOSFET SOT-252 Mechanical Drawing DIM A A1 B C D E F G G1 G2 H I J K L M 5/7 TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.3BSC 0.09BSC 4.6BSC 0.18BSC 6.80 7.20 0.268 0.283 5.40 5.60 0.213 0.220 6.40 6.65 0.252 0.262 2.20 2.40 0.087 0.094 0.00 0.20 0.000 0.008 5.20 5.40 0.205 0.213 0.75 0.85 0.030 0.033 0.55 0.65 0.022 0.026 0.35 0.65 0.014 0.026 0.90 1.50 0.035 0.059 2.20 2.80 0.087 0.110 0.50 1.10 0.020 0.043 0.90 1.50 0.035 0.059 1.30 1.70 0.051 0.67 Version: Preliminary Preliminary TSM2N70 700V N-Channel Power MOSFET SOT-251 Mechanical Drawing DIM A A1 b b1 b2 C C1 D E e L L1 L2 L3 6/7 TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.19 2.38 0.086 0.094 0.89 1.14 0.035 0.045 0.64 0.89 0.025 0.035 0.76 1.14 0.030 0.045 5.21 5.46 0.205 0.215 0.46 0.58 0.018 0.023 0.46 0.58 0.018 0.023 5.97 6.10 0.235 0.240 6.35 6.73 0.250 0.265 2.28 BSC. 0.90 BSC. 8.89 9.65 0.350 0.380 1.91 2.28 0.075 0.090 0.89 1.27 0.035 0.050 1.15 1.52 0.045 0.060 Version: Preliminary Preliminary TSM2N70 700V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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