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KSMP4449
KERSMI ELECTRONIC CO.,LTD.
-30V P-channel MOSFET
Description
This P-channel MOSFET s use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
-30V
RDSON
ID
34MΩ
-7A
1)
2)
Low gate charge.
Green device available.
3)
4)
Advanced high cell denity trench technology for ultra RDS(ON)
Excellent package for good heat dissipation.
SOP-8
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-30
VGS
Gate-Source Voltage
±20
V
V
Continuous Drain Current-1
-7
Continuous Drain Current-T=100℃
-4.6
Pulsed Drain Current2
-40
EAS
Single Pulse Avalanche Energy3
—
PD
Power Dissipation4
3.1
TJ, TSTG
Operating and Storage Junction Temperature
-55 to
ID
Range
150
A
mJ
W
℃
Thermal Characteristics
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KSMP4449
KERSMI ELECTRONIC CO.,LTD.
-30V P-channel MOSFET
Symbol
Parameter
Ratings
RƟJC
Thermal Resistance ,Junction to Case1
40
RƟJA
Thermal Resistance, Junction to Ambient1
75
Units
℃/W
Package Marking and Ordering Information
Part NO.
Marking
Package
KSMP4449
KSMP4449
SOP-8
Electrical Characteristics TC=25℃
Symbol
Parameter
unless otherwise noted
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
-30
—
—
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
—
-1
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
—
±100
v
μA
nA
VDS=VDS, ID=250μA
-1
-2
-3
V
VDS=10V,ID=6A
—
27
34
VDS=2.5V,ID=5A
—
38
—
VDS=5V,ID=12A
—
15
—
—
980
1225
—
150
—
—
115
—
—
7.7
—
—
6
—
—
20
—
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
RDS(ON)
Drain-Source On Resistance²
GFS
Forward Transconductance
MΩ
--S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
pF
Switching Characteristics
td(off)
Turn-Off Delay Time
tf
Fall Time
—
7
—
Qg
Total Gate Charge
—
18.7
24
Qgs
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
9.6
—
Qgd
Gate-Drain “Miller” Charge
ID=6A
—
3.2
—
ns
ns
ns
ns
nC
nC
nC
—
-0.77
-1
V
—
21
26
ns
—
13
—
nC
td(on)
Turn-On Delay Time
tr
Rise Time
VDS=20V,
VGS=10V,RGEN=3.3Ω
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS =1A
IF=7A,di/dt=100A/μS
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KSMP4449
KERSMI ELECTRONIC CO.,LTD.
-30V P-channel MOSFET
Notes:
1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max.rating.The test condition is V DD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
unless otherwise noted
Figure 2. Transfer Characteristics
Figure 4: On-Resistance vs. Junction
Temperature
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KSMP4449
KERSMI ELECTRONIC CO.,LTD.
-30V P-channel MOSFET
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
Figure 7: Gate-Charge Characteristics
Figure 8.Maximum Safe Operating Area
Figure 9: Normalized Maximum Transient Thermal Impedance
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