KSMN4818 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Description This N-channel MOSFET s use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS 30V RDSON ID 19MΩ 8.5A 1) Low gate charge. 2) Green device available. 3) 4) Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOP-8 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 8.5 Continuous Drain Current-T=100℃ 6.6 Pulsed Drain Current2 40 EAS Single Pulse Avalanche Energy3 — PD Power Dissipation4 2 TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSMN4818 KERSMI ELECTRONIC CO.,LTD. 30V Symbol Parameter RƟJC Thermal Resistance ,Junction to Case1 RƟJA Thermal Resistance, Junction to Ambient1 N-channel MOSFET Ratings Units 62.5 ℃/W 40 Package Marking and Ordering Information Part NO. Marking Package KSMN4818 KSMN4818 SOP-8 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 30 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — 100 v μA nA VDS=VDS, ID=250μA 1 1.8 3 V VDS=10V,ID=6A — 15.9 19 VDS=2.5V,ID=5A — 22.3 27 VDS=5V,ID=12A — 23 — — 1040 — — 180 — — 110 — — 5.2 — — 4.4 — — 17.3 — — 3.3 — On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance MΩ --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics — 19.2 — Gate-SourceCharge VGS=4.5V, VDS=20V, — 9.36 — Gate-Drain “Miller” Charge ID=6A — 2.6 — ns ns ns ns nC nC nC — 0.75 1 V — 16.7 — ns — 6.7 — nC td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMN4818 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is V DD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Figure 1. On-Region Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage unless otherwise noted Figure 2. Transfer Characteristics Figure 4: On-Resistance vs. Junction Temperature www.kersemi.com 3 KSMN4818 KERSMI ELECTRONIC CO.,LTD. 30V N-channel MOSFET Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics Figure 7: Gate-Charge Characteristics Figure 8.Maximum Safe Operating Area Figure 9: Normalized Maximum Transient Thermal Impedance www.kersemi.com 4