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KSMN4818
KERSMI ELECTRONIC CO.,LTD.
30V
N-channel MOSFET
Description
This N-channel MOSFET s use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
30V
RDSON
ID
19MΩ
8.5A
1)
Low gate charge.
2)
Green device available.
3)
4)
Advanced high cell denity trench technology for ultra RDS(ON)
Excellent package for good heat dissipation.
SOP-8
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
V
V
Continuous Drain Current-1
8.5
Continuous Drain Current-T=100℃
6.6
Pulsed Drain Current2
40
EAS
Single Pulse Avalanche Energy3
—
PD
Power Dissipation4
2
TJ, TSTG
Operating and Storage Junction Temperature
Range
-55 to
150
ID
A
mJ
W
℃
Thermal Characteristics
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KSMN4818
KERSMI ELECTRONIC CO.,LTD.
30V
Symbol
Parameter
RƟJC
Thermal Resistance ,Junction to Case1
RƟJA
Thermal Resistance, Junction to Ambient1
N-channel MOSFET
Ratings
Units
62.5
℃/W
40
Package Marking and Ordering Information
Part NO.
Marking
Package
KSMN4818
KSMN4818
SOP-8
Electrical Characteristics TC=25℃
Symbol
Parameter
unless otherwise noted
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
30
—
—
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
—
1
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
—
100
v
μA
nA
VDS=VDS, ID=250μA
1
1.8
3
V
VDS=10V,ID=6A
—
15.9
19
VDS=2.5V,ID=5A
—
22.3
27
VDS=5V,ID=12A
—
23
—
—
1040
—
—
180
—
—
110
—
—
5.2
—
—
4.4
—
—
17.3
—
—
3.3
—
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
RDS(ON)
Drain-Source On Resistance²
GFS
Forward Transconductance
MΩ
--S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
pF
Switching Characteristics
—
19.2
—
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
9.36
—
Gate-Drain “Miller” Charge
ID=6A
—
2.6
—
ns
ns
ns
ns
nC
nC
nC
—
0.75
1
V
—
16.7
—
ns
—
6.7
—
nC
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
VDS=20V,
VGS=10V,RGEN=3.3Ω
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS =1A
IF=7A,di/dt=100A/μS
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KSMN4818
KERSMI ELECTRONIC CO.,LTD.
30V
N-channel MOSFET
Notes:
1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max.rating.The test condition is V DD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
unless otherwise noted
Figure 2. Transfer Characteristics
Figure 4: On-Resistance vs. Junction
Temperature
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KSMN4818
KERSMI ELECTRONIC CO.,LTD.
30V
N-channel MOSFET
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
Figure 7: Gate-Charge Characteristics
Figure 8.Maximum Safe Operating Area
Figure 9: Normalized Maximum Transient Thermal Impedance
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