AOS Semiconductor Product Reliability Report AOI510, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOI510. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOI510 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial -RoHS Compliant -Halogen Free Detailed refer to the datasheet. II. Die / Package Information: Process Package Type Lead Frame Die Attach Bond wire Mold Material Moisture Level AOI510 Standard sub-micron Low voltage N channel process TO251A Bare Cu Soft solder Al & Au wire Epoxy resin with silica filler Up to Level 1 * Note * based on info provided by assembler and mold compound supplier 2 III. Result of Reliability Stress for AOI510 Test Item Test Condition Time Point Lot Attribution Total Sample size Solder Reflow Precondition HTGB 168hr 85°°c /85%RH +3 cycle reflow@260°°c Temp = 150°°c , Vgs=100% of Vgsmax Number of Failures Standard - 3 lots 495pcs 0 JESD22A113 168hrs 500 hrs 1000 hrs 1 lot 308pcs 0 JESD22A108 0 JESD22A108 165pcs 0 JESD22A110 0 JESD22A102 0 JESD22A104 3 lots 77 pcs / lot Temp = 150°°c , Vds=80% of Vdsmax HTRB 168hrs 500 hrs 1000 hrs 1 lot 308pcs 3 lots 77 pcs / lot HAST Pressure Pot Temperature Cycle 130 +/- 2°°c , 85%RH, 33.3 psi, Vgs = 100% of Vgs max 121°°c , 29.7psi, RH=100% 100 hrs 3 lots 96 hrs (Note A*) 3 lots 55 pcs / lot 165pcs (Note A*) 55 pcs / lot -65°°c to 150°°c , air to air 250 / 500 cycles 3 lots 165pcs (Note A*) 55 pcs / lot Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 7 MTTF = 15704 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion device hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (2x77x168+6x77x1000) x258] = 7 9 8 MTTF = 10 / FIT =1.38 x 10 hrs = 15704 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s )] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10 -5eV / K 3