SHENZHENFREESCALE AOD510

AOD510/AOI510
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Features
VDS
ID (at VGS=10V)
30V
70A
RDS(ON) (at VGS=10V)
< 2.6mΩ
RDS(ON) (at VGS=4.5V)
< 4mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
C
A
45
A
37
IAS
45
A
Avalanche energy L=0.1mH C
EAS
101
mJ
VDS Spike
VSPIKE
36
V
Avalanche Current
100ns
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
7.5
Steady-State
Steady-State
RθJA
RθJC
W
5.2
TJ, TSTG
Symbol
t ≤ 10s
W
30
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
60
PD
TA=25°C
1/6
V
54
IDSM
TA=70°C
±20
280
IDM
TA=25°C
Continuous Drain
Current
Units
V
70
ID
TC=100°C
Maximum
30
-55 to 175
Typ
16
41
1.9
°C
Max
20
50
2.5
Units
°C/W
°C/W
°C/W
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AOD510/AOI510
30V N-Channel AlphaMOS
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
5
1.2
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
1.7
VGS=10V, VDS=15V, ID=20A
0.9
µA
±100
nA
2.2
V
2.1
2.6
2.7
3.3
3.2
4
mΩ
1
V
70
A
85
0.7
mΩ
S
2719
VGS=0V, VDS=15V, f=1MHz
Units
V
1
TJ=55°C
VDS=5V, ID=20A
Max
30
VDS=30V, VGS=0V
IDSS
Coss
Typ
pF
1204
pF
169
pF
2
3
Ω
44
60
nC
21
28
nC
9
nC
Gate Drain Charge
7
nC
Turn-On DelayTime
9.7
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
5.2
ns
32.5
tf
Turn-Off Fall Time
ns
10.3
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=20A, dI/dt=500A/µs
19.6
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
42.7
ns
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/6
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AOD510/AOI510
30V N-Channel AlphaMOS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
10V
4V
VDS=5V
3.5V
100
80
4.5V
80
ID(A)
ID (A)
60
60
40
40
20
VGS=3V
20
125°C
0
0
0
1
2
3
4
0
5
1
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
Normalized On-Resistance
1.6
5
RDS(ON) (mΩ
Ω)
25°C
4
VGS=4.5V
3
2
VGS=10V
1
0
VGS=10V
ID=20A
1.4
17
5
VGS=4.5V
2
ID=20A
10
1.2
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
6
1.0E+02
ID=20A
5
1.0E+01
4
1.0E+00
125°C
3
IS (A)
RDS(ON) (mΩ
Ω)
40
1.0E-01
1.0E-02
2
1.0E-03
1
25°C
0
25°C
1.0E-04
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/6
125°C
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AOD510/AOI510
30V N-Channel AlphaMOS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4000
VDS=15V
ID=20A
3500
8
Ciss
Capacitance (pF)
VGS (Volts)
3000
6
4
2500
2000
Coss
1500
1000
2
500
Crss
0
0
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
0
RDS(ON)
limited
10µs
30
100µs
10.0
1.0
1ms
10ms
TJ(Max)=175°C
TC=25°C
DC
0.1
TJ(Max)=175°C
TC=25°C
160
10µs
Power (W)
ID (Amps)
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
200
1000.0
100.0
5
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.5°C/W
1
PD
Single Pulse
0.1
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AOD510/AOI510
30V N-Channel AlphaMOS
80
100
60
80
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
20
60
40
20
0
0
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
175
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
175
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=50°C/W
0.1
Single Pulse
PD
0.01
Ton
T
0.001
1E-05
5/6
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
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AOD510/AOI510
30V N-Channel AlphaMOS
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
6/6
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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