AOD510/AOI510 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Features VDS ID (at VGS=10V) 30V 70A RDS(ON) (at VGS=10V) < 2.6mΩ RDS(ON) (at VGS=4.5V) < 4mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C C A 45 A 37 IAS 45 A Avalanche energy L=0.1mH C EAS 101 mJ VDS Spike VSPIKE 36 V Avalanche Current 100ns TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C 7.5 Steady-State Steady-State RθJA RθJC W 5.2 TJ, TSTG Symbol t ≤ 10s W 30 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 60 PD TA=25°C 1/6 V 54 IDSM TA=70°C ±20 280 IDM TA=25°C Continuous Drain Current Units V 70 ID TC=100°C Maximum 30 -55 to 175 Typ 16 41 1.9 °C Max 20 50 2.5 Units °C/W °C/W °C/W www.freescale.net.cn AOD510/AOI510 30V N-Channel AlphaMOS Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance 5 1.2 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) 1.7 VGS=10V, VDS=15V, ID=20A 0.9 µA ±100 nA 2.2 V 2.1 2.6 2.7 3.3 3.2 4 mΩ 1 V 70 A 85 0.7 mΩ S 2719 VGS=0V, VDS=15V, f=1MHz Units V 1 TJ=55°C VDS=5V, ID=20A Max 30 VDS=30V, VGS=0V IDSS Coss Typ pF 1204 pF 169 pF 2 3 Ω 44 60 nC 21 28 nC 9 nC Gate Drain Charge 7 nC Turn-On DelayTime 9.7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 5.2 ns 32.5 tf Turn-Off Fall Time ns 10.3 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 19.6 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 42.7 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/6 www.freescale.net.cn AOD510/AOI510 30V N-Channel AlphaMOS TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 10V 4V VDS=5V 3.5V 100 80 4.5V 80 ID(A) ID (A) 60 60 40 40 20 VGS=3V 20 125°C 0 0 0 1 2 3 4 0 5 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 Normalized On-Resistance 1.6 5 RDS(ON) (mΩ Ω) 25°C 4 VGS=4.5V 3 2 VGS=10V 1 0 VGS=10V ID=20A 1.4 17 5 VGS=4.5V 2 ID=20A 10 1.2 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 6 1.0E+02 ID=20A 5 1.0E+01 4 1.0E+00 125°C 3 IS (A) RDS(ON) (mΩ Ω) 40 1.0E-01 1.0E-02 2 1.0E-03 1 25°C 0 25°C 1.0E-04 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 125°C 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOD510/AOI510 30V N-Channel AlphaMOS TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4000 VDS=15V ID=20A 3500 8 Ciss Capacitance (pF) VGS (Volts) 3000 6 4 2500 2000 Coss 1500 1000 2 500 Crss 0 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 0 RDS(ON) limited 10µs 30 100µs 10.0 1.0 1ms 10ms TJ(Max)=175°C TC=25°C DC 0.1 TJ(Max)=175°C TC=25°C 160 10µs Power (W) ID (Amps) 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 100.0 5 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=2.5°C/W 1 PD Single Pulse 0.1 Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD510/AOI510 30V N-Channel AlphaMOS 80 100 60 80 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 20 60 40 20 0 0 0 25 50 75 100 125 150 TCASE (° °C) Figure 12: Power De-rating (Note F) 175 0 25 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 175 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=50°C/W 0.1 Single Pulse PD 0.01 Ton T 0.001 1E-05 5/6 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) 100 1000 www.freescale.net.cn AOD510/AOI510 30V N-Channel AlphaMOS Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn