AOS Semiconductor Product Reliability Report AOI508, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOI508. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOI508 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 10VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial Detailed refer to the datasheet. II. Die / Package Information: Process Package Type Lead Frame Die Attach Bond wire Mold Material Moisture Level AOI508 Standard sub-micron Low voltage N channel process TO251A Bare Cu Soft solder Al & Au wire Epoxy resin with silica filler Up to Level 1 * Note * based on info provided by assembler and mold compound supplier 2 III. Result of Reliability Stress for AOI508 Test Item Test Condition Time Point Lot Attribution Total Sample size Solder Reflow Precondition HTGB 168hr 85°°c /85%RH +3 cycle reflow@260°°c - 3 lots 495pcs 0 JESD22A113 Temp = 150°°c , Vgs=100% of Vgsmax 168hrs 500 hrs 1000 hrs 1 lot 308pcs 0 JESD22A108 Temp = 150°°c , Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 77 pcs / lot 308pcs 0 JESD22A108 HAST 130°°c , 85%RH, 33.3 psi, Vgs = 100% of Vgs max 100 hrs (Note A*) 3 lots 77 pcs / lot 165pcs 0 JESD22A110 Pressure Pot 121°°c , 29.7psi, RH=100% 96 hrs (Note A*) 3 lots 55 pcs / lot 165pcs 0 JESD22A102 (Note A*) 55 pcs / lot 0 JESD22A104 HTRB Temperature Cycle -65°°c to 150°°c , air to air 250 / 500 cycles Number of Failures Standard 3 lots (Note A*) 1 lot 3 lots 3 lots 165pcs (Note A*) 55 pcs / lot Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 7 MTTF = 15704 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion device hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (2x77x168+6x77x1000) x258] = 7 9 8 MTTF = 10 / FIT =1.38 x 10 hrs = 15704 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s )] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10 -5eV / K 3