AOK10N90 900V,10A N-Channel MOSFET General Description Product Summary The AOK10N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 1000@150℃ 10A RDS(ON) (at VGS=10V) < 0.98Ω 100% UIS Tested 100% Rg Tested Top View D TO-247 G S G S D AOK10N90 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOK10N90 900 Units V ±30 V 10 7 A Pulsed Drain Current C IDM Avalanche Current C IAR 3.7 A Repetitive avalanche energy C EAR 205 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case EAS dv/dt 410 5 403 mJ V/ns W 3.2 -55 to 150 W/ oC °C 300 °C AOK10N90 40 0.5 0.31 Units °C/W °C/W °C/W Rev.1.0 June 2013 PD TJ, TSTG TL Symbol RθJA RθCS RθJC www.aosmd.com 38 Page 1 of 5 AOK10N90 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 900 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V 1000 V 0.9 V/ oC VDS=900V, VGS=0V 1 VDS=720V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS ISM 4 4.5 nΑ V VGS=10V, ID=5A 0.82 0.98 Ω VDS=40V, ID=5A 17 1 V Maximum Body-Diode Continuous Current 10 A Maximum Body-Diode Pulsed Current 38 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge 3.4 S 2100 2630 3160 pF VGS=0V, VDS=25V, f=1MHz 130 190 250 pF 10 18 26 pF VGS=0V, VDS=0V, f=1MHz 1.5 3.4 5.2 Ω 45 60 75 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs ±100 µA VGS=10V, VDS=720V, ID=10A 13 nC Qgd Gate Drain Charge 27 nC tD(on) Turn-On DelayTime 64 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=10A,dI/dt=100A/µs,VDS=100V 460 575 700 Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V 7.0 9.9 12.0 Body Diode Reverse Recovery Time VGS=10V, VDS=450V, ID=10A, RG=25Ω 105 ns 155 ns 84 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=3.7A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0 June 2013 www.aosmd.com Page 2 of 5 AOK10N90 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 25 20 -55°C VDS=40V 10V 6.5V 10 15 125°C ID(A) ID (A) 6V 10 1 VGS=5.5V 25°C 5 0 0 5 10 15 20 25 0.1 30 2 VDS (Volts) Fig 1: On-Region Characteristics 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 3 Normalized On-Resistance 2 1.6 RDS(ON) (Ω) 4 1.2 VGS=10V 0.8 0.4 0 0 5 10 15 20 2.5 VGS=10V ID=5A 2 1.5 1 0.5 0 -100 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.2 1.0E+02 1.0E+00 40 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 25°C 1.0E-02 1.0E-03 0.9 1.0E-04 0.8 -100 1.0E-05 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temperature Rev.1.0 June 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AOK10N90 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VDS=720V ID=10A 1000 Capacitance (pF) VGS (Volts) 12 Ciss 9 6 Coss 100 Crss 10 3 0 1 0 15 30 45 60 75 90 0.1 10 100 100 12 10 RDS(ON) limited 10 10µs 8 100µs ID (Amps) Current rating ID(A) 1 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 6 1 1ms 10ms DC 4 0.1 2 TJ(Max)=150°C TC=25°C 0 0 25 50 75 100 125 150 0.01 1 TCASE (°C) Figure 9: Current De-rating (Note B) 10 100 1000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOK10N90 (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.31°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOK10N90 (Note F) Rev.1.0 June 2013 www.aosmd.com Page 4 of 5 AOK10N90 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.1.0 June 2013 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 5 of 5