SHENZHENFREESCALE AOTF4N90

AOTF4N90
900V,4A N-Channel MOSFET
General Description
The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply
designs.
Features
VDS
ID (at VGS=10V)
1000V@150℃
4A
RDS(ON) (at VGS=10V)
< 3.6Ω
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
ID
Units
V
±30
V
4*
2.5*
A
Pulsed Drain Current C
IDM
16
Avalanche Current C
IAR
2.3
A
Repetitive avalanche energy C
EAR
79
mJ
158
5
37
mJ
V/ns
W
0.3
-55 to 150
W/ oC
°C
300
°C
AOTF4N90
65
3.3
Units
°C/W
°C/W
Single plused avalanche energy G
EAS
Peak diode recovery dv/dt
dv/dt
TC=25°C
PD
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
TL
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
RθJA
Maximum Junction-to-Ambient A,D
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
1/5
AOTF4N90
900
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AOTF4N90
900V,4A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
900
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
V
1
V/ oC
VDS=900V, VGS=0V
1
VDS=720V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=2A
gFS
Forward Transconductance
VDS=40V, ID=2A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
ISM
±100
3.4
µA
4.1
4.5
nΑ
V
2.8
3.6
Ω
6
S
1
V
Maximum Body-Diode Continuous Current
4
A
Maximum Body-Diode Pulsed Current
16
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
1000
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=10V, VDS=720V, ID=4A
0.75
580
728
880
pF
41
52
70
pF
4.4
5.5
9
pF
2
4
6
Ω
14.5
18.4
22
nC
3.5
4.4
5.3
nC
6.4
8
12
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=4A,dI/dt=100A/µs,VDS=100V
155
196
235
Qrr
Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V
3.2
4.05
4.9
VGS=10V, VDS=450V, ID=4A,
RG=25Ω
22
ns
46
ns
43
ns
39
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=2.3A, VDD=150V, RG=25Ω, Starting TJ=25°C
2/5
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AOTF4N90
900V,4A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
7
VDS=40V
10V
6
6.5V
-55°C
10
4
ID(A)
ID (A)
5
6V
3
125°C
1
2
VGS=5.5V
25°C
1
0
0.1
0
5
10
15
20
25
30
2
VDS (Volts)
Fig 1: On-Region Characteristics
6
8
VGS(Volts)
Figure 2: Transfer Characteristics
10
3
Normalized On-Resistance
8
6
RDS(ON) (Ω )
4
4
VGS=10V
2
2
4
6
8
VGS=10V
ID=2A
2
1.5
1
0.5
0
-100
0
0
2.5
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.0E+02
40
1.0E+00
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
1
125°C
1.0E-01
25°C
1.0E-02
0.9
1.0E-03
0.8
-100
1.0E-04
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
3/5
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AOTF4N90
900V,4A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
VDS=720V
ID=4A
Capacitance (pF)
VGS (Volts)
12
9
6
Ciss
1000
Coss
100
Crss
10
3
1
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
30
4
100
10µs
10
ID (Amps)
Current rating ID(A)
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
5
3
2
RDS(ON)
limited
100µs
1
1ms
DC
10ms
0.1s
0.1
1
TJ(Max)=150°C
TC=25°C
0
1s
0.01
0
25
50
75
100
125
150
1
TCASE (°C)
Figure 9: Current De-rating (Note B)
1
10
100
VDS (Volts)
10000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.3°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.000001
1000
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF4N90 (Note F)
10
Zθ JC Normalized Transient
Thermal Resistance
1
0.00001
0.0001
T
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF4N90 (Note F)
4/5
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AOTF4N90
900V,4A N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
5/5
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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