AOTF4N90 900V,4A N-Channel MOSFET General Description The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. Features VDS ID (at VGS=10V) 1000V@150℃ 4A RDS(ON) (at VGS=10V) < 3.6Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID Units V ±30 V 4* 2.5* A Pulsed Drain Current C IDM 16 Avalanche Current C IAR 2.3 A Repetitive avalanche energy C EAR 79 mJ 158 5 37 mJ V/ns W 0.3 -55 to 150 W/ oC °C 300 °C AOTF4N90 65 3.3 Units °C/W °C/W Single plused avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25°C PD Power Dissipation B Derate above 25oC Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol RθJA Maximum Junction-to-Ambient A,D Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 1/5 AOTF4N90 900 www.freescale.net.cn AOTF4N90 900V,4A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 900 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V V 1 V/ oC VDS=900V, VGS=0V 1 VDS=720V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2A gFS Forward Transconductance VDS=40V, ID=2A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM ±100 3.4 µA 4.1 4.5 nΑ V 2.8 3.6 Ω 6 S 1 V Maximum Body-Diode Continuous Current 4 A Maximum Body-Diode Pulsed Current 16 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss 1000 Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=10V, VDS=720V, ID=4A 0.75 580 728 880 pF 41 52 70 pF 4.4 5.5 9 pF 2 4 6 Ω 14.5 18.4 22 nC 3.5 4.4 5.3 nC 6.4 8 12 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=4A,dI/dt=100A/µs,VDS=100V 155 196 235 Qrr Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V 3.2 4.05 4.9 VGS=10V, VDS=450V, ID=4A, RG=25Ω 22 ns 46 ns 43 ns 39 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. L=60mH, IAS=2.3A, VDD=150V, RG=25Ω, Starting TJ=25°C 2/5 www.freescale.net.cn AOTF4N90 900V,4A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 7 VDS=40V 10V 6 6.5V -55°C 10 4 ID(A) ID (A) 5 6V 3 125°C 1 2 VGS=5.5V 25°C 1 0 0.1 0 5 10 15 20 25 30 2 VDS (Volts) Fig 1: On-Region Characteristics 6 8 VGS(Volts) Figure 2: Transfer Characteristics 10 3 Normalized On-Resistance 8 6 RDS(ON) (Ω ) 4 4 VGS=10V 2 2 4 6 8 VGS=10V ID=2A 2 1.5 1 0.5 0 -100 0 0 2.5 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.2 1.0E+02 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 25°C 1.0E-02 0.9 1.0E-03 0.8 -100 1.0E-04 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temparature 3/5 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOTF4N90 900V,4A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=720V ID=4A Capacitance (pF) VGS (Volts) 12 9 6 Ciss 1000 Coss 100 Crss 10 3 1 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 30 4 100 10µs 10 ID (Amps) Current rating ID(A) 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 5 3 2 RDS(ON) limited 100µs 1 1ms DC 10ms 0.1s 0.1 1 TJ(Max)=150°C TC=25°C 0 1s 0.01 0 25 50 75 100 125 150 1 TCASE (°C) Figure 9: Current De-rating (Note B) 1 10 100 VDS (Volts) 10000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.3°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.000001 1000 Figure 10: Maximum Forward Biased Safe Operating Area for AOTF4N90 (Note F) 10 Zθ JC Normalized Transient Thermal Resistance 1 0.00001 0.0001 T 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF4N90 (Note F) 4/5 www.freescale.net.cn AOTF4N90 900V,4A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 5/5 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.freescale.net.cn