Datasheet

AON7474A
75V N-Channel AlphaMOS
General Description
Product Summary
VDS
• Trench Power MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
75V
7.5A
ID (at VGS=10V)
Applications
RDS(ON) (at VGS=10V)
< 130mΩ
RDS(ON) (at VGS=4.5V)
< 155mΩ
100% UIS Tested
100% Rg Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
DFN 3x3
Top View
D
Bottom View
Top View
1
8
2
7
3
6
4
5
G
Pin 1
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON7474A
DFN 3x3
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current C
Avalanche energy
VDS Spike
L=0.1mH
C
10µs
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: April 2014
IAS
10
A
EAS
5
mJ
90
V
15.5
4.1
Steady-State
Steady-State
W
2.6
TJ, TSTG
Symbol
t ≤ 10s
W
6
PDSM
TA=70°C
A
3
PD
TC=100°C
A
4
VSPIKE
TC=25°C
V
18
IDSM
TA=70°C
±16
4.5
IDM
TA=25°C
Units
V
7.5
ID
TC=100°C
C
Maximum
75
RθJA
RθJC
-55 to 150
Typ
24
47
6.6
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°C
Max
30
60
8
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=10mA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±16V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
0.5
±100
nA
1.0
1.6
V
105
130
190
2.3
155
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=3A
120
gFS
Forward Transconductance
VDS=5V, ID=5A
10
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=37.5V, f=1MHz
mΩ
S
1
V
7.5
A
280
pF
30
pF
13
pF
2.2
3.3
6
15
nC
Qg(4.5V)
Total Gate Charge
3
8
nC
Qgs
Gate Source Charge
1.2
nC
Qgd
Gate Drain Charge
1.5
nC
tD(on)
Turn-On DelayTime
5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=5A, dI/dt=500A/µs
Qrr
Body Diode Reverse Recovery Charge IF=5A, dI/dt=500A/µs
52
VGS=10V, VDS=37.5V, ID=5A
VGS=10V, VDS=37.5V, RL=7.5Ω,
RGEN=3Ω
1.1
mΩ
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
Body Diode Reverse Recovery Time
f=1MHz
µA
5
VGS=10V, ID=5A
Coss
Units
75
VDS=75V, VGS=0V
IDSS
Max
Ω
3.5
ns
16
ns
3.5
ns
14
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: April 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
VDS=5V
10V
4V
15
15
10
ID(A)
ID (A)
4.5V
3V
10
125°C
5
5
VGS=2.5V
25°C
0
0
0
1
2
3
4
0
5
1
2.2
200
2
Normalized On-Resistance
220
180
RDS(ON) (mΩ)
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=4.5V
160
140
120
100
VGS=10V
80
2
VGS=10V
ID=5A
1.8
1.6
1.4
VGS=4.5V
ID=3A
1.2
1
0.8
60
0
2
4
6
8
0
10
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
260
1.0E+01
ID=5A
240
1.0E+00
220
125°C
1.0E-01
IS (A)
RDS(ON) (mΩ)
125°C
200
180
1.0E-02
160
140
25°C
1.0E-03
120
25°C
1.0E-04
100
80
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: April 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
500
VDS=37.5V
ID=5A
400
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
300
200
Coss
100
Crss
0
0
0
2
4
6
8
0
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
45
60
75
VDS (Volts)
Figure 8: Capacitance Characteristics
500
100.0
TJ(Max)=150°C
TC=25°C
10µs
10µs
400
RDS(ON)
limited
Power (W)
ID (Amps)
10.0
100µs
1.0
1ms
10ms
100
TJ(Max)=150°C
TC=25°C
0.0
0.01
ZθJC Normalized Transient
Thermal Resistance
200
DC
0.1
10
300
0.1
1
10
100
1000
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=8.0°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: April 2014
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10
8
Current rating ID(A)
Power Dissipation (W)
15
10
5
0
6
4
2
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: April 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: April 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6