AOD474A 75V N-Channel MOSFET General Description Product Summary The AOD474A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 75V 10A RDS(ON) (at VGS=10V) < 130mΩ RDS(ON) (at VGS=4.5V) < 155mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D S G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0: Sep 2012 IAS/IAR 10 A EAS/EAR 5 mJ 28.5 Steady-State Steady-State W 14.5 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s A 2 PDSM TA=70°C A 2.5 PD TC=100°C V 18 IDSM TA=70°C ±16 7 IDM TA=25°C Continuous Drain Current Units V 10 ID TC=100°C Maximum 75 -55 to 175 Typ 17 50 4.3 www.aosmd.com °C Max 25 60 5.2 Units °C/W °C/W °C/W Page 1 of 6 AOD474A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=10mA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±16V VGS(th) Gate Threshold Voltage VDS=VGS,ID=250µA 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 18 TJ=55°C ±100 nA 1 1.6 V 105 130 190 235 VGS=4.5V, ID=2A 120 155 mΩ 1 V 10 A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=5A 10 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 VGS=10V, ID=5A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 75 VDS=75V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=37.5V, f=1MHz mΩ S 280 pF 30 pF 13 pF 2.2 3.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 6 9 nC Qg(4.5V) Total Gate Charge 3 5 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=37.5V, ID=5A VGS=10V, VDS=37.5V, RL=7.5Ω, RGEN=3Ω 1.1 1.2 nC 1.5 nC 5 ns 3.5 ns 16 ns tf Turn-Off Fall Time 3.5 ns trr Body Diode Reverse Recovery Time IF=5A, dI/dt=500A/µs 14 Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=500A/µs 52 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Sep 2012 www.aosmd.com Page 2 of 6 AOD474A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 VDS=5V 10V 8V 15 15 10 ID(A) ID (A) 4.5V 3V 10 5 5 125°C VGS=2.5V 25°C 0 0 0 1 2 3 4 0 5 2.4 200 2.2 Normalized On-Resistance 220 RDS(ON) (mΩ Ω) 180 VGS=4.5V 160 140 120 100 80 VGS=10V 1 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=10V ID=5A 2 1.8 17 5 2 10 =4.5V 1.6 1.4 VGS ID=2A 1.2 1 0.8 60 0 2 0 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 260 1.0E+01 ID=5A 240 40 200 1.0E-01 180 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 220 125°C 160 125°C 1.0E-02 25°C 1.0E-03 140 120 1.0E-04 100 25°C 1.0E-05 80 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Sep 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOD474A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 500 VDS=37.5V ID=5A 400 Capacitance (pF) VGS (Volts) 8 6 4 2 200 Coss 100 0 Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 15 30 45 60 VDS (Volts) Figure 8: Capacitance Characteristics 75 200 100.0 10µs 10µs 10.0 100µs RDS(ON) limited 1.0 DC TJ(Max)=175°C TC=25°C 160 Power (W) ID (Amps) Ciss 300 1ms 10ms 17 5 2 10 120 80 0.1 TJ(Max)=175°C TC=25°C 40 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 01 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=5.2°C/W 1 PD 0.1 Ton Single Pulse T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Sep 2012 www.aosmd.com Page 4 of 6 AOD474A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=100°C 10 TA=150°C TA=125°C 25 20 15 10 5 1 0 1 10 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 100 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 175 10000 15 10 Power (W) Current rating ID(A) TA=25°C 1000 17 5 2 10 100 5 10 1 0 1E-05 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 1000 0 18 175 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=60°C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Sep 2012 www.aosmd.com Page 5 of 6 AOD474A Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: Sep 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6