RU1HC2H Complementary Advanced Power MOSFET MOSFET Features Pin Description • N-Channel 100V/3.5A, RDS (ON) =75mΩ (Typ.) @ VGS=10V RDS (ON) =80mΩ (Typ.) @ VGS=4.5V • P-Channel -100V/-2.5A, RDS (ON) =155mΩ (Typ.) @ VGS=-10V RDS (ON) =175mΩ (Typ.) @ VGS=-4.5V SOP-8 • Reliable and Rugged • ESD Protected • Lead Free and Green Available Applications • Power Management in Notebook Computer. Complementary MOSFET Absolute Maximum Ratings Symbol Parameter N -Channel P Channel Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 -100 VGSS Gate-Source Voltage ±20 ±20 Maximum Junction Temperature 150 150 °C -55 to 150 -55 to 150 °C 3.5 -2.5 A TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current TA=25°C V Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID Continuous Drain Current (VGS=±10V) PD RθJA ② Maximum Power Dissipation ① -10 TA=25°C 3.5 -2.5 TA=70°C 2.9 -2 TA=25°C 2 TA=70°C 1.3 Thermal Resistance-Junction to Ambient Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2012 ① 14 62.5 A A W °C/W www.ruichips.com RU1HC2H Electrical Characteristics Symbol Parameter (TA=25°C Unless Otherwise Noted) RU1HC2H Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V,IDS=250µA N 100 VGS=0V,IDS=-250µA P -100 VDS=100V, V GS=0V IDSS Zero Gate Voltage Drain Current TJ=85°C VDS=-100V, V GS=0V TJ=85°C VGS(th) IGSS Gate Threshold Voltage Gate Leakage Current V 1 N 30 -1 P µA -30 VDS=VGS,IDS=250µA N 1.2 2.5 VDS=VGS,IDS=-250µA P -1.5 -2.7 VGS=±20V, VDS=0V N ±10 µA VGS=±16V, VDS=0V P ±10 µA VGS=10V, IDS=2A 75 80 VGS=4.5V, IDS=1.5A 80 85 VGS=-10V, IDS=-2A 155 160 175 180 V N RDS(ON) ③ Drain-Source On-state Resistance mΩ P VGS=-4.5V, IDS=-1.5A Diode Characteristics VSD ③ trr Qrr ISD=1A, VGS=0V N 1.2 V ISD=-1A, VGS=0V P -1.2 V N-Channel ISD=3.5A, dlSD/dt=100A/µs N 42 P 52 P-Channel ISD=-2.5A, dlSD/dt=100A/µs N 43 P 75 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2012 2 ns nC www.ruichips.com RU1HC2H Electrical Characteristics (TA=25°C Unless Otherwise Noted) ④ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) tf Turn-off Delay Time N-Channel VGS=0V, VDS=50V, Frequency=1.0MHz N 1520 P 1630 N 134 P-Channel VGS=0V, VDS=-50V, Frequency=1.0MHz P 191 N 62 P 83 N 12 P 16 N 24 P 28 N 34 P 45 N 18 P 24 N-Channel VDS=80V, VGS= 10V, IDS=3.5A N 18 P 23 N 4 P-Channel VDS=-80V, VGS= -10V, IDS=-2.5A P 7 N 5 P 6 N-Channel VDD=50V, RL=30Ω, IDS=3.5A, VGEN= 10V, RG=6Ω P-Channel VDD=-50V, RL=30Ω, IDS=-2.5A, VGEN= -10V, RG=6Ω Turn-off Fall Time pF ns ④ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: nC Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2012 3 www.ruichips.com RU1HC2H Typical Characteristics（N-Channel） Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Thermal Transient Impedance ID - Drain Current (A) Normalized Effective Transient Safe Operation Area VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2012 Square Wave Pulse Duration (sec) 4 www.ruichips.com RU1HC2H Typical Characteristics(N-Channel) Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2012 Tj - Junction Temperature (°C) 5 www.ruichips.com RU1HC2H Typical Characteristics(N-Channel) Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2012 QG - Gate Charge (nC) 6 www.ruichips.com RU1HC2H Typical Characteristics(P-Channel) Drain Current Ptot - Power (W) -ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Thermal Transient Impedance -ID - Drain Current (A) Normalized Effective Transient Safe Operation Area -VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2012 Square Wave Pulse Duration (sec) 7 www.ruichips.com RU1HC2H Typical Characteristics(P-Channel) Drain-Source On Resistance -ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics -VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance -VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2012 Tj - Junction Temperature (°C) 8 www.ruichips.com RU1HC2H Typical Characteristics(P-Channel) Source-Drain Diode Forward -IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) -VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) -VGS - Gate-Source Voltage (V) Capacitance -VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2012 QG - Gate Charge (nC) 9 www.ruichips.com RU1HC2H Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU1HC2H RU1HC2H SOP-8 Tape&Reel 2500 13’’ 12mm Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2012 10 www.ruichips.com RU1HC2H Package Information SOP-8 SYMBOL MM INCH MM MIN MAX MIN MAX A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 A2 1.350 1.550 0.053 b 0.330 0.510 c 0.170 D 4.700 SYMBOL INCH MIN MAX MIN MAX E 3.800 4.000 0.150 0.157 0.010 E1 5.800 6.200 0.228 0.244 0.061 e 0.013 0.020 L 0.400 1.270 0.016 0.050 0.250 0.006 0.010 θ 0° 8° 0° 8° 5.100 0.185 0.200 1.270 (BSC) 0.050 (BSC) ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2012 11 www.ruichips.com RU1HC2H Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2012 12 www.ruichips.com