Datasheet

AON7510
30V N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
VDS
30V
75A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 1.25mΩ
RDS(ON) (at VGS=4.5V)
< 2.1mΩ
100% UIS Tested
100% Rg Tested
• System/Load Swithch,Battery Swithch
DFN 3.3x3.3
Top View
Bottom View
D
Top View
Pin 1
1
8
2
7
3
6
4
5
G
S
Pin 1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON7510
DFN 3.3x3.3
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current C
Avalanche energy
VDS Spike
L=0.05mH
C
10µs
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: November 2013
45
60
A
EAS
90
mJ
VSPIKE
36
V
46
Steady-State
Steady-State
W
18.5
4.1
RθJA
RθJC
W
2.6
TJ, TSTG
Symbol
t ≤ 10s
A
IAS
PDSM
Junction and Storage Temperature Range
A
35.5
PD
TA=25°C
V
300
IDSM
TA=70°C
±20
59
IDM
TA=25°C
Units
V
75
ID
TC=100°C
C
Maximum
30
-55 to 150
Typ
25
50
1.8
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°C
Max
30
60
2.7
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
gFS
Forward Transconductance
VDS=5V, ID=20A
1.2
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
VGS=4.5V, ID=20A
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
±100
nA
1.6
2.0
V
0.9
1.25
1.35
1.85
1.65
2.1
0.65
VGS=0V, VDS=15V, f=1MHz
f=1MHz
µA
S
1
V
58
A
4500
pF
1400
pF
1310
pF
Ω
1.8
2.7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
100
140
nC
Qg(4.5V) Total Gate Charge
60
84
nC
VGS=10V, VDS=15V, ID=20A
0.9
mΩ
mΩ
90
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
V
5
VGS=10V, ID=20A
Static Drain-Source On-Resistance
Units
1
TJ=55°C
RDS(ON)
Max
30
VDS=30V, VGS=0V
IDSS
Coss
Typ
Qgs
Gate Source Charge
10
nC
Qgd
Gate Drain Charge
40
nC
tD(on)
Turn-On DelayTime
10
ns
tr
Turn-On Rise Time
20
ns
tD(off)
Turn-Off DelayTime
58
ns
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
37
ns
IF=20A, dI/dt=500A/µs
23
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
49
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: November 2013
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
4.5V
VDS=5V
3V
80
80
10V
60
60
ID(A)
ID (A)
2.8V
40
125°C
40
25°C
20
20
VGS=2.5V
0
0
0
1
2
3
4
0
5
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
2.5
Normalized On-Resistance
1.8
2
RDS(ON) (mΩ
Ω)
1
VGS=4.5V
1.5
1
VGS=10V
0.5
1.6
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
4
1.0E+02
ID=20A
1.0E+01
1.0E+00
IS (A)
RDS(ON) (mΩ
Ω)
3
125°C
2
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
1
1.0E-04
25°C
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: November 2013
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0
0.2
0.4
0.6
0.8
1
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
7000
VDS=15V
ID=20A
6000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
5000
4000
3000
Coss
2000
Crss
2
1000
0
0
0
20
40
60
80
100
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
500
RDS(ON)
limited
10µs
400
100µs
1ms
10.0
DC
10ms
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
TJ(Max)=150°C
TC=25°C
10µs
Power (W)
ID (Amps)
15
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
10
300
200
100
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
0
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.7°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: November 2013
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Page 4 of 6
50
100
40
80
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10
60
40
20
0
0
0
25
50
75
100
125
150
0
25
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
50
75
100
125
150
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Zθ JA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
Single Pulse
Ton
0.001
0.0001
T
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: November 2013
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.1.0: November 2013
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6