UNISONIC TECHNOLOGIES CO., LTD UT7410 Preliminary Power MOSFET 30V, 24A N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT7410 is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge. The UTC UT7410 is suitable for Load Switch and DC-DC converters applications, etc. FEATURES * RDS(ON) < 24mΩ @ VGS=10V, ID=8A RDS(ON) < 32mΩ @ VGS=4.5V, ID=7A * Low Gate Charge (typical 9.8nC) ORDERING INFORMATION Ordering Number Note: UT7410G-K08-3030-R Pin Assignment: G: Gate D: Drain Package DFN-8(3×3) S: Source 1 S 2 S Pin Assignment 3 4 5 6 7 S G D D D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-902.d UT7410 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 30 V ±20 V TC=25°C 24 A (Note 2) ID TC=100°C 15 A Continuous TA=25°C 9.5 A Drain Current (Note 1) IDSM TA=70°C 7.7 A Pulsed (Note 3) IDM 40 A 20 W TC=25°C PD (Note 2) TC=100°C 8.3 W Power Dissipation TA=25°C 3.1 W PDSM (Note 1) TA=70°C 2 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS THERMAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNIT t≤10s 30 40 °C/W Junction to Ambient (Note 1) θJA Steady-State 60 75 °C/W Junction to Case (Note 2) Steady-State θJC 5 6 °C/W Notes: 1. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSM is based on θJA t≤10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. 2. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-902.d UT7410 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance On State Drain Current DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Total Gate Charge SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) gFS ID(ON) CISS COSS CRSS RG 10V 4.5V TEST CONDITIONS ID=250µA, VGS=0V VDS=30V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 30 VDS=VGS, ID=250µA VGS=10V, ID=8A VGS=4.5V, ID=7A VDS=5V, ID=8A VGS=10V, VDS=5V 1.4 VGS=0V, VDS=15V, f=1.0MHz VGS=0V, VDS=0V, f=1.0MHz QG VGS=10V, VDS=15V, ID=8A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VGS=10V, VDS=15V, RL=2Ω, RGEN=3Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Drain-Source Diode Forward Voltage VSD IS=1A, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT V 1 µA +100 nA -100 nA 1.8 18 27 30 2.5 24 32 40 550 110 55 4 4.9 9.8 4.6 1.8 2.2 5 3.2 24 6 0.75 V mΩ mΩ S A pF pF pF Ω nC nC nC nC ns ns ns ns 1.7 1 A V 3 of 6 QW-R502-902.d UT7410 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS RG 90% RD VGS VDS 10V 10% DUT VGS td(ON) tON Resistive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR td(OFF) tF tOFF Resistive Switching Waveforms 4 of 6 QW-R502-902.d UT7410 Preliminary Power MOSFET + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-902.d UT7410 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-902.d