AON7436 20V N-Channel MOSFET General Description Product Summary The AON7436 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=10V) VDS 20V 23A RDS(ON) (at VGS=10V) < 19mΩ RDS(ON) (at VGS =4.5V) < 22mΩ RDS(ON) (at VGS =2.5V) < 32mΩ RDS(ON) (at VGS =1.8V) < 50mΩ 100% Rg Tested DFN 3x3A Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G Pin 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C TA=25°C TA=70°C Power Dissipation B TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0: August 2010 16.7 Steady-State Steady-State W 7 3.1 RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s A 7 PDSM TA=70°C A 9 PD TA=25°C Power Dissipation A V 50 IDSM TC=25°C ±12 15 IDM Continuous Drain Current Units V 23 ID TC=100°C Maximum 20 -55 to 150 Typ 30 60 6.2 °C Max 40 75 7.5 Units °C/W °C/W °C/W Page 1 of 6 AON7436 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±12V VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=10V, VDS=5V 50 VGS=10V, ID=9A TJ=125°C 100 ±nA 0.75 1.1 V 15.5 19 22 27 A 17.5 22 mΩ VGS=2.5V, ID=6A 23 32 mΩ 50 mΩ VGS=1.8V, ID=2A 32 Forward Transconductance VDS=5V, ID=9A 20 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance mΩ VGS=4.5V, ID=7A gFS Coss µA 5 Gate Threshold Voltage Units V 1 IGSS Static Drain-Source On-Resistance Max 20 VDS=20V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz S 1 V 15 A 420 525 630 pF 65 95 125 pF 45 75 105 pF 0.8 Ω 1.7 2.6 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12.5 15 Qg(4.5V) Total Gate Charge 6 VGS=10V, VDS=10V, ID=9A nC nC Qgs Gate Source Charge 1 nC Qgd Gate Drain Charge 2 nC tD(on) Turn-On DelayTime 3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=10V, RL=1.1Ω, RGEN=3Ω 7.5 ns 20 ns 6 ns trr Body Diode Reverse Recovery Time IF=9A, dI/dt=100A/µs 14 Qrr Body Diode Reverse Recovery Charge IF=9A, dI/dt=100A/µs 6 17 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: August 2010 www.aosmd.com Page 2 of 6 AON7436 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 20 10V VDS=5V 4.5V 15 2.5V ID(A) ID (A) 30 20 10 1.8V 125°C 5 10 25°C VGS=1.5V 0 0 0 1 2 3 4 0 5 60 Normalized On-Resistance RDS(ON) (mΩ Ω) 1 1.5 2 2.5 1.8 50 40 VGS=1.8V 30 VGS=2.5V VGS=4.5V 20 VGS=10V 10 0 VGS=2.5V ID=6A 1.6 VGS=4.5V ID=7A 1.4 17 VGS=1.8V5 ID=2A 2 1.2 10 1 VGS=10V ID=9A 0.8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 45 1.0E+02 ID=9A 40 1.0E+01 35 1.0E+00 40 125°C 30 IS (A) RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 25 20 1.0E-02 15 1.0E-04 10 1.0E-05 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: August 2010 25°C 1.0E-03 25°C 0 125°C 1.0E-01 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7436 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1000 VDS=10V ID=9A 800 Capacitance (pF) VGS (Volts) 8 6 4 400 Coss 2 200 0 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 160 10µs 100µs 1ms 10ms DC TJ(Max)=150°C TC=25°C 0.1 120 17 5 2 10 80 40 0 0.0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) Figure 10: Single Pulse Power Rating18 Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 20 TJ(Max)=150°C TC=25°C 10µs RDS(ON) 1.0 10 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 200 Power (W) 10.0 Crss 15 100.0 ID (Amps) Ciss 600 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=7.5°C/W 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: August 2010 www.aosmd.com Page 4 of 6 AON7436 25 25 20 20 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 15 10 5 5 0 0 0 25 50 75 100 125 TCASE (°C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C 1000 Power (W) 17 5 2 10 100 10 1 0.00001 0 1000 18 0.001 0.1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: August 2010 www.aosmd.com Page 5 of 6 AON7436 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: August 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6