Dual N-channel MOSFET (common drain)

Dual N-channel MOSFET (common drain)
ELM18822BA-S
■General description
■Features
ELM18822BA-S uses advanced trench technology to
provide excellent Rds(on) and low gate charge.
•
•
•
•
•
•
Vds=20V
Id=7A (Vgs=10V)
Rds(on) < 21mΩ (Vgs=10V)
Rds(on) < 24mΩ (Vgs=4.5V)
Rds(on) < 32mΩ (Vgs=2.5V)
Rds(on) < 50mΩ (Vgs=1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
20
V
Symbol
Vds
Gate-source voltage
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
V
A
1
Idm
30
A
2
Pd
1.50
0.96
W
1
Tj, Tstg
-55 to 150
°C
Id
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
±12
7.0
5.7
Junction and storage temperature range
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
63
Max.
83
Unit
°C/W
101
64
130
83
°C/W
°C/W
Note
1
3
■Circuit
TSSOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
Pin name
1
DRAIN1/DRAIN2
2
3
4
SOURCE1
SOURCE1
GATE1
5
6
7
GATE2
SOURCE2
SOURCE2
8
DRAIN1/DRAIN2
4-1
D2
D1
G2
G1
S1
S2
Dual N-channel MOSFET (common drain)
ELM18822BA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Gate-source breakdown voltage
Gate threshold voltage
On state drain current
Igss
BVgso
Vgs(th)
Id(on)
20
Vds=16V, Vgs=0V
Static drain-source on-resistance
1
5
100
Ta=55°C
Vds=0V, Vgs=±10V
Vds=0V, Ig=±250μA
Vds=Vgs, Id=250μA
Vgs=4.5V, Vds=5V
Vgs=10V, Id=7A
V
Ta=125°C
Rds(on) Vgs=4.5V, Id=6.6A
Vgs=2.5V, Id=5.5A
Vgs=1.8V, Id=2A
Forward transconductance
Gfs Vds=5V, Id=7A
Diode forward voltage
Vsd Is=1A, Vgs=0V
Max. body-diode continuous current
Is
DYNAMIC PARAMETERS
Input capacitance
Ciss
Output capacitance
Coss Vgs=0V, Vds=10V, f=1MHz
Reverse transfer capacitance
Crss
Gate resistance
Rg Vgs=0V, Vds=0V, f=1MHz
SWITCHING PARAMETERS
Total gate charge
Qg
Gate-source charge
Qgs Vgs=4.5V, Vds=10V, Id=7A
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Vgs=5V, Vds=10V
Turn-on rise time
tr
Turn-off delay time
td(off) RL=1.4Ω, Rgen=3Ω
tf
Turn-off fall time
Body diode reverse recovery time
trr
If=7A, dIf/dt=100A/μs
Body diode reverse recovery charge
Qrr If=7A, dIf/dt=100A/μs
±12
0.5
30
0.8
1.0
16.4
23.0
19.0
25.0
36.0
24
0.7
21.0
28.0
24.0
32.0
50.0
1.0
2.5
μA
nA
V
V
A
mΩ
S
V
A
630
164
137
1.5
pF
pF
pF
Ω
9.3
0.6
3.6
5.7
11.5
31.5
9.7
15.2
6.3
nC
nC
nC
ns
ns
ns
ns
ns
nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Dual N-channel MOSFET (common drain)
ELM18822BA-S
■Typical electrical and thermal characteristics
30
20
10V
3V
Vgs=5V
Vgs =2V
4V
15
Id(A)
Id(A)
20
10
Vgs =1.5V
10
125°C
5
25°C
0
0
1
2
3
4
0
5
0.0
Vds(Volts)
50
Normalize ON-Resistance
1.6
40
Rds(on)(m� )
1.0
Vgs =2.5V
Vgs =1.8V
30
Vgs =4.5V
20
Vgs =10V
10
0
0
5
10
15
1.5
2.0
2.5
Vgs(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Regions Characteristi cs
Vgs=1.8V
Id=2A
1.4
Vgs=4.5V
Vgs=2.5V
Id=5.5A
Id=6.6A
1.2
Vgs=10V
Id=7A
1.0
0.8
20
0
Id(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
100
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
80
1E+01
Id=7A
70
1E+00
60
125°C
1E-01
50
125°C
Is(A)
Rds(on)(m� )
0.5
40
1E-02
1E-03
30
20
1E-04
25°C
25°C
1E-05
10
0
2
4
6
0.0
8
0.2
0.4
0.6
0.8
Vsd(Volts)
Figure 6: Body-Diode Characteristics
Vgs(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.0
Dual N-channel MOSFET (common drain)
ELM18822BA-S
1400
5
Vds=10V
1000
Capacitance (pF)
Vgs(Volts)
1200
Id=7A
4
3
2
1
Ciss
800
600
Crss
400
200
0
0
0
2
4
6
8
0
10
10�s
15
20
100�s
1ms
1
10s
1s
0.1
1
10
Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
20
10
10ms
100m
DC
Tj(max)=150°C
Ta=25°C
30
Power (W)
Rds(on)
limited
0.1
10
40
Tj(max)=150°C, Ta=25°C
0
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
100
0.01
10
Z� ja Normalized Transient
Thermal Resistance
Id (Amps)
100
5
Vds(Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
Coss
1
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=83°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pd
0.1
0.01
0.00001
Ton
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4- 4
100
1000